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    LN2302ALT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET FEATURES ● RDS ON ≦85mΩ@VGS=4.5V LN2302ALT1G S-LN2302ALT1G ● RDS(ON)≦115mΩ@VGS=2.5V ● RDS(ON)≦135mΩ@VGS=1.8V ● Super high density cell design for extremely low RDS(ON) 3 ● Exceptional on-resistance and maximum DC current


    Original     		PDF LN2302ALT1G S-LN2302ALT1G AEC-Q101 LN2302ALT3G S-LN2302ALT3G 3000/Tape2302ALT1G LN2302ALT1G