Untitled
Abstract: No abstract text available
Text: BACK LIGHT GLP003PBC BLUE Features Description ! LOW The Blue source color devices are made with InGaN on POWER REQUIREMENTS. ! LARGE AREA, UNIFORM, BRIGHT LIGHT SiC Light Emitting Diode. EMITTING SURFACE. ! EASY ! LOW FOR INSTALLATION. POWER CONSUMPTION.
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GLP003PBC
DSAC4252
MAR/01/2003
GLR/01/2003
GLP003PBC
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Untitled
Abstract: No abstract text available
Text: HL-AF-3528S9FU57GH183BC-A RED \ GREEN \ BLUE Description Features zSUITABLE FOR ALL SMT ASSEMBLY AND on GaAs substrate Light Emitting Diode. SOLDER PROCESS. ON TAPE AND REEL. The Blue source color devices are made with GaN on 2000PCS / REEL. SiC Light Emitting Diode.
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HL-AF-3528S9FU57GH183BC-A
2000PCS
22Pcs.
1000Hrs.
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Untitled
Abstract: No abstract text available
Text: BACK LIGHT AT T E N T I O N OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES GLP-003/1608PBC BLUE Features Description l LARGE InGaN on SiC Light Emitting Diode. l LOW POWER REQUIREMENTS. AREA, UNIFORM, BRIGHT LIGHT EMITTING SURFACE.
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GLP-003/1608PBC
DSAB6954
JUN/03/2003
GLP-003/1608PBC
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L2043
Abstract: L2043MBDT
Text: 3.65x6.15mm SINGLE CHIP LED LIGHT BAR L2043MBDT BLUE Features Description z FLAT The Blue source color devices are made with GaN on SiC Light RECTANGULAR LIGHT EMITTING SURFACE. z SINGLE z IDEAL AS FLUSH MOUNTED PANEL INDICATORS. z EXCELLENT z LONG Emitting Diode.
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L2043MBDT
L2043MBDT-V
L2043MBDT
L2043
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arl5213
Abstract: ARL-5213RGBC red blue diode ARL-5213RG
Text: ARL-5213RGBC/4C Features • • • • • Uniformlight output Lowpowerconsumption I.C.Compatible Longlife-solidstatereliaility Common cathode Descriptions • The Red source color devices are made with AlGaInP on GaAs substrate Light Emitting Diode • The Green source color devices are made with InGaN on sic Light Emitting Diode
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ARL-5213RGBC/4C
arl5213
ARL-5213RGBC
red blue diode
ARL-5213RG
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hitachi he8812sg
Abstract: Hitachi DSA002726
Text: HE8812SG GaAlAs Infrared Emitting Diode Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment. Features • High efficiency, high output
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HE8812SG
HE8812SG
HE8812:
hitachi he8812sg
Hitachi DSA002726
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Hitachi DSA002727
Abstract: No abstract text available
Text: HE8404SG GaAlAs Infrared Emitting Diode Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment. Features • High efficiency, high output
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HE8404SG
HE8404SG
HE8404SG:
Hitachi DSA002727
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Hitachi DSA0087
Abstract: HE8404SG
Text: HE8404SG GaAlAs Infrared Emitting Diode ADE-208-997 Z 1st Edition Dec. 2000 Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.
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HE8404SG
ADE-208-997
HE8404SG
HE8404SG:
Hitachi DSA0087
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hitachi he8812sg
Abstract: Hitachi DSA0087 HE8812SG
Text: HE8812SG GaAlAs Infrared Emitting Diode ADE-208-1000 Z 1st Edition Dec. 2000 Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.
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HE8812SG
ADE-208-1000
HE8812SG
HE8812:
hitachi he8812sg
Hitachi DSA0087
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Hitachi DSA00306
Abstract: HE8404SG
Text: HE8404SG GaAlAs Infrared Emitting Diode ADE-208-997 Z 1st Edition Dec. 2000 Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.
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HE8404SG
ADE-208-997
HE8404SG
HE8404SG:
Hitachi DSA00306
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Hitachi DSA002726
Abstract: No abstract text available
Text: HE8811 GaAlAs Infrared Emitting Diode Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments
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HE8811
HE8811
HE8811:
Hitachi DSA002726
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Untitled
Abstract: No abstract text available
Text: BACK LIGHT ATTENTION GLP-003/1608PBC BLUE OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description LOW POWER REQUIREMENTS. The Blue source color devices are made with InGaN LARGE AREA, UNIFORM, BRIGHT LIGHT on SiC Light Emitting Diode.
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GLP-003/1608PBC
DSAB6954
APR/08/2005
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Hitachi DSA0087
Abstract: HE7601SG
Text: HE7601SG GaAlAs Infrared Emitting Diode ADE-208-996 Z 1st Edition Dec. 2000 Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors.
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HE7601SG
ADE-208-996
HE7601SG
HE7601SG:
Hitachi DSA0087
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Hitachi DSA002727
Abstract: No abstract text available
Text: HE7601SG GaAlAs Infrared Emitting Diode Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors. Features • High efficiency and high output power
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HE7601SG
HE7601SG
HE7601SG:
Hitachi DSA002727
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Untitled
Abstract: No abstract text available
Text: SUBMINIATURE SOLID STATE LAMP PRELIMINARY SPEC AM27UVC03 Features Description !SUBMINIATURE PACKAGE. The source color devices are made with InGaN on !GULL WING. SiC Light Emitting Diode. ! LONG LIFE - SOLID STATE RELIABILITY. This device radiates intense ultraviolet UV light
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AM27UVC03
DSAC5130
MAR/28/2003
AM27UVC03
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HE8811
Abstract: Hitachi DSA0047
Text: HE8811 GaAlAs Infrared Emitting Diode ADE-208-999 Z 1st Edition Dec. 2000 Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments
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HE8811
ADE-208-999
HE8811
HE8811:
Hitachi DSA0047
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Hitachi DSA0087
Abstract: HE8811
Text: HE8811 GaAlAs Infrared Emitting Diode ADE-208-999 Z 1st Edition Dec. 2000 Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments
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HE8811
ADE-208-999
HE8811
HE8811:
Hitachi DSA0087
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kingbright
Abstract: LED kingbright white AA3022PWC45SFRV kingbright lens
Text: Kingbright 3.0x2.2mm SINGLE COLOR SURFACE MOUNT LED LAMP AA3022PWC45SFRV Features Description !3.0mm x 2.2mm SMT LED, 1.5mm THICKNESS. The source color devices are made with InGaN !WHITE REFLECTOR TO MAXIMIZE REFLECTION on SiC Light Emitting Diode. OF LIGHT.
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AA3022PWC45SFRV
AA3022PWC45SFRV
kingbright
LED kingbright white
kingbright lens
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Untitled
Abstract: No abstract text available
Text: 1.6x0.8mm SMD CHIP LED LAMP APHK1608PWC WHITE Features Description !1.6mmx0.8mm SMT LED, 0.7mm THICKNESS. The source color devices are made with InGaN on SiC !LOW POWER CONSUMPTION. Light Emitting Diode. !WIDE VIEWING ANGLE. ! IDEAL FOR BACK LIGHT AND INDICATOR.
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APHK1608PWC
2000PCS
DSAC0596
DEC/16/2002
APHK1608PWC
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rectangular blue led
Abstract: MV5B
Text: SOLID STATE LED LAMP RECTANGULAR 2 X 5 mm LED LAMPS MV52123 MV57123 AlGaAs HER Red MV53123 MV5B123 Yellow Blue MV54123 Green DESCRIPTION This rectangular LED lamp provides a lighted surface area of 2 X 5 mm. The high efficiency red and yellow solid state lamps contain a GaAsP on GaP light emitting diode. The green lamps utilize a GaP light emitting diode.
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MV52123
MV57123
MV53123
MV5B123
MV54123
MV57123
MV5B123
MV54123
rectangular blue led
MV5B
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KPPDA04-121
Abstract: No abstract text available
Text: SURFACE MOUNT DISPLAY KPPDA04-121 GREEN Features Description !0.4 INCH CHARACTER HEIGHT. The Green source color devices are made with InGaN !LOW on SiC Light Emitting Diode. CURRENT OPERATION. !HIGH CONTRAST AND LIGHT OUTPUT. ! EASY MOUNTING ON P.C. BOARDS OR SOCKETS.
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KPPDA04-121
500PCS
DSAD0169
DEC/28/2002
KPPDA04-121
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Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT DISPLAY APPSC04-41PWWA WHITE Features Description !0.4 INCH CHARACTER HEIGHT. The source color devices are made with InGaN on !LOW CURRENT OPERATION. SiC Light Emitting Diode. !HIGH CONTRAST AND LIGHT OUTPUT. ! EASY MOUNTING ON P.C. BOARDS OR SOCKETS.
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APPSC04-41PWWA
800PCS
DSAC1700
DEC/14/2002
APPSC04-41PWWA
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Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT DISPLAY APPSC04-41VGKWA GREEN Features Description !0.4 INCH CHARACTER HEIGHT. The Green source color devices are made with !LOW CURRENT OPERATION. InGaN on SiC Light Emitting Diode. !HIGH CONTRAST AND LIGHT OUTPUT. !EASY MOUNTING ON P.C. BOARDS OR SOCKETS.
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APPSC04-41VGKWA
900PCS
DSAB3113
JUN/01/2002
APPSC04-41VGKWA
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SLA560
Abstract: SLA560BBT SLA560BBT3F TSZ22111 marking 02 information lot
Text: PRODUCTS VISUAL LIGHT E M im N G DIODE - TYPE SLA560BBT 1. CONSTRUCTION 2. USAGE Source o f light for display unit 3. DIMENSIONS See Figure. 1 4. ABSOLUTE MAXIMUM RATINGS 6 / InGaN on SiC blue visual light emitting diodes packaged with colorless epoxy. Ta=25°C
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SLA560BBT
SLA560B/E
TSZ22111
SLA560
SLA560BBT3F
marking 02
information lot
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