NE76083A
Abstract: No abstract text available
Text: LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • HERMETIC METAL/CERAMIC PACKAGE • ION IMPLANTATION 24 21 3.5 Noise Figure, NF dB • LG = 0.3 µm, WG = 280 µm 4 Ga 3 18 2.5 15 2 12 9
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NE76083A
NE76083A
24-Hour
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DIODE marking EG 83A
Abstract: No abstract text available
Text: 05062 VSB06P05LCI Only One Name Means ProTek’Tion high powered VSIP tvs array Description The VSB06P05LCI is a high powered, low capacitance TVS array available in a 6 pin VSIP package. This device is designed to protect telecommunications equipment from the damaging effects of ESD, EFT and secondary transient
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VSB06P05LCI
VSB06P05LCI
5/50ns
DIODE marking EG 83A
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Untitled
Abstract: No abstract text available
Text: 05062 VSB06P05LCI Only One Name Means ProTek’Tion high powered VSIP tvs array Description The VSB06P05LCI is a high powered, low capacitance TVS array available in a 6 pin VSIP package. This device is designed to protect telecommunications equipment from the damaging effects of ESD, EFT and secondary transient
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VSB06P05LCI
VSB06P05LCI
5/50ns
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vsb06p
Abstract: VSB06P05LCI lg 83a
Text: 05062 VSB06P05LCI Only One Name Means ProTek’Tion high powered VSIP tvs array Description The VSB06P05LCI is a high powered, low capacitance TVS array available in a 6 pin VSIP package. This device is designed to protect telecommunications equipment from the damaging effects of ESD, EFT and secondary transient
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VSB06P05LCI
VSB06P05LCI
5/50ns
vsb06p
lg 83a
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GR-1089
Abstract: RS-423 VSB06P05LCI abd marking code
Text: 05062 VSB06P05LCI Only One Name Means ProTek’Tion high powered VSIP tvs array Description The VSB06P05LCI is a high powered, low capacitance TVS array available in a 6 pin VSIP package. This device is designed to protect telecommunications equipment from the damaging effects of ESD, EFT and secondary transient
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VSB06P05LCI
VSB06P05LCI
5/50ns
GR-1089
RS-423
abd marking code
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PDF
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ED 83A
Abstract: No abstract text available
Text: B B A A A B B B A B A B A A B C A B B A CC A A B A A B A A A B B C C AA A C B A C B A A AB C B Glenair IPT SE Series Available Insert Arrangements BB B B B A D B B A D C 3 Contacts B C BB BB B C B B C A BBC A A DA B D A D A D CCAA C A A D C CA A C A E B A
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NE76083A
Abstract: lg 83a
Text: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz 4 • HIGH ASSOCIATED GAIN GA = 9 dB TYP at f = 12 GHz • ION IMPLANTATION DESCRIPTION 21
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NE76083A
NE76083A
24-Hour
lg 83a
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1402C transistor
Abstract: 2000W High Power Supply Unit L2000 switching 2000w DSL200 Single phase power factor correction 2000w RMS power 2000W Power Supply 48v power supply artesyn transistor 1402c
Text: L2000 SERIES Single output • • • • • • • • The L series is a range of single output, high current power supplies ideally suited to a broad range of applications. Robust performance and field proven reliability are hallmarks of this series. Field reliability in excess of 100,000 hours has been
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L2000
VDE0805/EN60950/IEC950
R9172195
UL1950
E135734
1402C
1402C transistor
2000W High Power Supply Unit
switching 2000w
DSL200
Single phase power factor correction
2000w RMS power
2000W Power Supply
48v power supply artesyn
transistor 1402c
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NEC D2217
Abstract: D1647 D1426 TRANSISTOR D1546 d2422 transistor d1647 d1426 transistor D1427 D1664 transistor d1065
Text: DATA SHEET GaAs MES FET NE76083A C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • PACKAGE DIMENSIONS Low noise figure Unit : mm NF = 1.6 dB TYP. at f = 12 GHz (NE76083A) NF = 2.4 dB MAX. at f = 12 GHz (NE76083A-2.4) 1.88±0.3 High associated gain
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NE76083A
NE76083A)
NE76083A-2
NEC D2217
D1647
D1426
TRANSISTOR D1546
d2422
transistor d1647
d1426 transistor
D1427
D1664
transistor d1065
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Untitled
Abstract: No abstract text available
Text: A B A B IPT SE Series Bayonet Lock Connectors B A B B B A B A A B A B C A B B A CC A A B A A B A A A B B C C BB B A 3 Contacts B C BB BB B C B B C A BBC A A DA B D A D A D CCAA C A A D C CA A C A E C B B C C C A AD CA CC BBC B DC D BB C B A D A C C A B C C C AA
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f6654
Abstract: STR-F6654 c828 STR F6654 c829 C3198Y FB801 ic803 IC904 C817
Text: LG CHASSIS: MC-83A R812 /1\ B. 2M/0. 5W RC CS li iOOOP 4KV A A * C q n /d f f > CB12 iOOOP
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MC-83A
470P/500V
1S2471
KIA7805BP
92OUlHQNOl
C812ICK)
C828-
13/273V
DB813
IC904
f6654
STR-F6654
c828
STR F6654
c829
C3198Y
FB801
ic803
C817
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Untitled
Abstract: No abstract text available
Text: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NE76083A NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V d s = 3 V , I d s = 1 0 mA LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz HIGH ASSOCIATED GAIN G a = 9 dB TYP at f = 12 GHz Lg = 0.3 [im, Wg = 280 \im HERMETIC METAL/CERAMIC PACKAGE
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NE76083A
NE76083A
IS21I
IS12I
IS12S21I
24-Hour
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Untitled
Abstract: No abstract text available
Text: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NE76083A NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V d s = 3 V , I d s = 1 0 mA LOW NOISE FIGURE NF= 1.6 d B T Y P a tf = 12GHz HIGH ASSOCIATED GAIN Ga = 9 dB TYP at f = 12 GHz 24 21 Lg = 0.3 |xm, Wg = 280 |im
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12GHz
NE76083A
NE76083A
IS22I
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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1400
Abstract: NE202 circuit NE202 NE20200 NE20248 NE20283A NE202XX W2603
Text: NEC/ CALIFORNIA 1SE D bM2741M OGOIS^G T-31-¿S' 5 - N E i* i» ULTRA LOW NOISE K-BAND HETERO JUNCTION FET FEATURES NE202 SERIES OUTLINE DIMENSIONS • LOW NOISE FIGURE: 1 dB TYP at f = 12 GHz NE202XX 1.2 dB TYP at f = 12 GHz (NE202XX-1.4)
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bM2741M
NE202
NE202XX)
NE202XX-1
NE20248)
NE20283A)
1400
NE202 circuit
NE20200
NE20248
NE20283A
NE202XX
W2603
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NE32000
Abstract: NE32084 NE32083A
Text: E C/ C A L I F O R N I A NEC 1SE D b42?m4 OQOlbOS r - 3 / - 2 S' 3 NE32000 NE32083A NE32084 LOW COST/LOW NOISE K-BAND HETERO JUNCTION FET OUTLINE DIMENSIONS FEATURES NE32000 CHIP • LOW NOISE FIGURE 1.2 dB TYP at f = 12 GHz (NE32083A) 1.3 dB TYP at f = 12 GHz (NE32084)
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NE32000
NE32083A
NE32084
NE32083A)
NE32084)
NE320
NE32000
NE32084
NE32083A
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TRANSISTOR tip122 CHN 949
Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.
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38v01
TRANSISTOR tip122 CHN 949
E2955T
BD706
TU F 13003
13003 Transistor NPN Power TO 126
transistor E2955T
construction linear amplifier 2sc1945
LA 4301
8d679
transistor bf 175
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SN74LS83
Abstract: V7420
Text: <8> M OTOROLA SN54LS83A SN74LS83A D E S C R IP T IO N — The S N 54 L S /7 4 L S 83 A is a high-speed 4 -B it B inary Full Adder w ith internal carry lookahead. It accepts tw o 4 -b it binary w ord s A 1 — A 4 , B1 — B4 land a Carry Input lC o)Jt generates the binary
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SN54LS83A
SN74LS83A
LS83A
SN74LS83
V7420
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xo 405 mf
Abstract: HTRO 0.1 x transistor a928 st cpcap A928 MT 6235 A928 transistor XC56311GC150 BR A928 DSP56311
Text: MOTOROLA Order Number: DSP56311/D Rev. 0, 2/2000 Semiconductor Products Sector Advance Information DSP56311 24-BIT DIGITAL SIGNAL PROCESSOR The Motorola DSP56311, a member of the DSP56300 family of programmable digital signal processors DSPs , supports wireless infrastructure applications with general filtering operations. The on-chip enhanced
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DSP56311/D
DSP56311
24-BIT
DSP56311,
DSP56300
DSP56311
DSP56000
DSP5631Ã
xo 405 mf
HTRO 0.1 x
transistor a928
st cpcap
A928
MT 6235
A928 transistor
XC56311GC150
BR A928
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Untitled
Abstract: No abstract text available
Text: DATA SHEET G a As MES FET NE76083A C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • P A C K A G E DIM EN SIO N S Low noise figure Unit : mm NF = 1.6 dB TYP. at f = 12 GHz (NE76083A) NF = 2.4 dB MAX. at f = 12 GHz (NE76083A-2.4) • 1,88±0.3
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NE76083A
NE76083A)
NE76083A-2
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PDF
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TC2260
Abstract: KU 506 transistor NEC D 809 F NE76083A low noise FET NEC U C band FET transistor s-parameters
Text: DATA SHEET GaAs MES FET NE76083A C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • P A C K A G E D IM E N S IO N S Low noise figure Unit : mm NF = 1.6 dB TYP. at f = 12 GHz (NE76083A) NF = 2.4 dB MAX. at f = 12 GHz (NE76083A-2.4) • High associated gain
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NE76083A
NE76083A)
NE76083A-2
TC2260
KU 506 transistor
NEC D 809 F
NE76083A
low noise FET NEC U
C band FET transistor s-parameters
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PDF
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NE202
Abstract: NE20300 NE20383A
Text: E C/ C A L I F O R N I A NEC 1SE D b4E7414 ODOISTT 1 NE20300 NE20383A ULTRA LOW NOISE Ku-BAND HETERO JUNCTION FET OUTLINE DIMENSIONS FEATURES • L O W N O IS E F IG U R E 1.25 d B T Y P at f = 12 G H z NE20300 CHIP (Units in pm) • H IG H A S S O C IA T E D GAIN
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b4E7414
NE20300
NE20383A
NE203
NE202,
NE202
NE20383A
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PDF
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NE76084
Abstract: NE760 NE76000 NE76083A S221 y427
Text: N E C / CALIFORNIA 1SE D NEC □4S7414 G D O l t m LOW NOISE Ku-K BAND G aAs MESFET 7 - r - 3 h 4 S NE760 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz The NE76000 provides a low noise figure and high associated
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4E7414
NE760
NE76000
NE76084
NE76083A
S221
y427
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PDF
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NE202 circuit
Abstract: NE202 NE20200 NE20248 NE20283A NE202XX 1400 88 pm BH574
Text: L NEC N E C / 1SE D CALIFORNIA • b427414 OQOISÌO T'3l -¿S' S ULTRA LOW NOISE K-BAND HETERO JUNCTION FET NE202 SERIES OUTLINE DIMENSIONS FEATURES • LOW NOISE FIGURE: 1 dB TYP at f = 12 GHz NE202XX 1.2 dB TYP at f = 12 GHz (NE202XX-1.4) 1.8 dB TYP at f = 18 GHz (NE20248)
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b427414
NE202
NE202XX)
NE202XX-1
NE20248)
NE20283A)
NE202 circuit
NE20200
NE20248
NE20283A
NE202XX
1400 88 pm
BH574
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