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    LESHAN Search Results

    LESHAN Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    05W Leshan Radio Company 05W 05WS SERIES ZENER DIODES Original PDF
    05W1 Leshan Radio Company 05W 05WS SERIES ZENER DIODES Original PDF
    05W11 Leshan Radio Company 05W 05WS SERIES ZENER DIODES Original PDF
    05W11A Leshan Radio Company 500 mW, 5 mA, zener diode Original PDF
    05W11B Leshan Radio Company 500 mW, 5 mA, zener diode Original PDF
    05W11C Leshan Radio Company 500 mW, 5 mA, zener diode Original PDF
    05W12 Leshan Radio Company 05W 05WS SERIES ZENER DIODES Original PDF
    05W12A Leshan Radio Company 500 mW, 5 mA, zener diode Original PDF
    05W12B Leshan Radio Company 500 mW, 5 mA, zener diode Original PDF
    05W12C Leshan Radio Company 500 mW, 5 mA, zener diode Original PDF
    05W15 Leshan Radio Company 05W 05WS SERIES ZENER DIODES Original PDF
    05W16 Leshan Radio Company 05W 05WS SERIES ZENER DIODES Original PDF
    05W18 Leshan Radio Company 05W 05WS SERIES ZENER DIODES Original PDF
    05W1C Leshan Radio Company 500 mW, 5 mA, zener diode Original PDF
    05W2 Leshan Radio Company 05W 05WS SERIES ZENER DIODES Original PDF
    05W20 Leshan Radio Company 05W 05WS SERIES ZENER DIODES Original PDF
    05W22 Leshan Radio Company 05W 05WS SERIES ZENER DIODES Original PDF
    05W24 Leshan Radio Company 05W 05WS SERIES ZENER DIODES Original PDF
    05W27 Leshan Radio Company 05W 05WS SERIES ZENER DIODES Original PDF
    05W2A Leshan Radio Company 500 mW, 5 mA, zener diode Original PDF
    ...

    LESHAN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    LESDA14V2LT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual transil array for ESD protection General Description The LESDA25VLT1G is a dual monolithic voltage suppressor designed to protect components which are connected to data and transmission lines against ESD. It clamps the voltage just above the logic level


    Original     		LESDA25VLT1G LESDA25VLT1G RS232 195mm 150mm 10Reel/Inner 30KPCS/Inner 3000PCS/Reel 80KPCS/Inner LESDA14V2LT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Amplifier Transistor LMSD1819A-RT1G NPN Silicon Surface Mount This NPN Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface


    Original     		LMSD1819A-RT1G SC-70/SOT-323 SC-70/SOT PDF

    marking code 8A

    Abstract: marking WM EN6100-4
    Text: LESHAN RADIO COMPANY, LTD. LGSMF05CT1G Thyristor Surge Protective Devices MECHANICAL CHARACTERISTICS Features z z z z z z z Molded JEDEC SOT-563 Package Weight 3 milligrams Availble in Lead-Free Nickel-Paladium-Gold Plating Solder Reflow Temperature: Nicker-Paladium-Gold


    Original     		LGSMF05CT1G OT-563 40kilovolts EIA-481. SESMF05C-T7 Suffix-T13 SESMF05C-T13. SESMF05C-P-T-7. Rev1-9/05 marking code 8A marking WM EN6100-4 PDF

    LMBT6428LT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Amplifier Transistors NPN Silicon LMBT6428LT1G LMBT6429LT1G z We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping LMBT6428LT1G 1KM 3000/Tape & Reel LMBT6428LT3G


    Original     		LMBT6428LT1G LMBT6429LT1G 10000/Tape LMBT6429LT3G 3000/Tape LMBT6428LT3G LMBT6428LT1G PDF

    JB marking transistor

    Abstract: MPS 425 transistor marking jb "UHF Transistors" k mps marking JB diode y-parameter LMBTH10WT1 sc70 marking JB
    Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR Featrues LMBTH10WT1G 1 BASE 3 z We declare that the material of product 2 EMITTER compliance with RoHS requirements. 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25


    Original     		LMBTH10WT1G SC-70/SOT SC-70 OT-323 JB marking transistor MPS 425 transistor marking jb "UHF Transistors" k mps marking JB diode y-parameter LMBTH10WT1 sc70 marking JB PDF

    L74VHC1GT08

    Abstract: 74VHC1GT08 t08 sot-23 MARKING OK t08 SOT L74VHC1GT08DFT1 marking code t08 VHC1GT08 marking code 10 sot23 A114
    Text: LESHAN RADIO COMPANY, LTD. 2-Input AND Gate with LSTTL–Compatible Inputs L74VHC1GT08 The L74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power issipation.


    Original     		L74VHC1GT08 L74VHC1G08 L74VHC1GT08 74VHC1GT08 t08 sot-23 MARKING OK t08 SOT L74VHC1GT08DFT1 marking code t08 VHC1GT08 marking code 10 sot23 A114 PDF

    SOD-923 zener

    Abstract: SOT PL IEC1000-4-2 33039
    Text: LESHAN RADIO COMPANY, LTD. Quad Array for ESD Protection LESDA6V8V5T1G This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as


    Original     		OT-553 OT-553 195mm 150mm 10Reel/Inner 30KPCS/Inner 3000PCS/Reel 80KPCS/Inner OT-723 SOD-923 zener SOT PL IEC1000-4-2 33039 PDF

    JB marking transistor

    Abstract: marking JB diode transistor marking JB LMBTH10LT1G
    Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors z We declare that the material of product compliance with RoHS requirements. Ordering Information LMBTH10QLT1G Device Marking Shipping LMBTH10QLT1G 3EQ 3000/Tape&Reel LMBTH10QLT3G 3EQ 10000/Tape&Reel 3 1 MAXIMUM RATINGS


    Original     		LMBTH10QLT1G 3000/Tape LMBTH10QLT3G 10000/Tape OT-23 JB marking transistor marking JB diode transistor marking JB LMBTH10LT1G PDF

    MOSFET SC-59 power

    Abstract: LBSS138WT1G LBSS138WT3G SC-75
    Text: LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts LBSS138WT1G N–Channel SC-70 Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.


    Original     		LBSS138WT1G SC-70 330mm 360mm MOSFET SC-59 power LBSS138WT1G LBSS138WT3G SC-75 PDF

    L74VHC1G86

    Abstract: marking code 10 sot23 sot23-5 transistor T1 A114 A115 C101 JESD22
    Text: LESHAN RADIO COMPANY, LTD. 2-Input Exclusive OR Gate L74VHC1G86 The L74VHC1G86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		L74VHC1G86 L74VHC1G86 25KNESS. marking code 10 sot23 sot23-5 transistor T1 A114 A115 C101 JESD22 PDF

    IEC61000-4-4

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Transient Voltage Suppressors for ESD Protection General Description The LESD5Z6.0T1G is designed to protect voltage LESD5Z6.0T1G sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and


    Original     		SC-79/SOD-523 IEC61000-4-2 195mm 150mm 10Reel/Inner 30KPCS/Inner 3000PCS/Reel 80KPCS/Inner OT-723 IEC61000-4-4 PDF

    L74VHC1G08

    Abstract: marking code 10 sot23 sot23-5 transistor T1 A114 A115 C101 JESD22
    Text: LESHAN RADIO COMPANY, LTD. 2-Input AND Gate L74VHC1G08 The L74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power issipation.


    Original     		L74VHC1G08 L74VHC1G08 marking code 10 sot23 sot23-5 transistor T1 A114 A115 C101 JESD22 PDF

    diode transient

    Abstract: 15KV LGSOT04LT1G LGSOT05LT1G LGSOT08LT1G
    Text: LESHAN RADIO COMPANY, LTD. Transient Voltage Suppressors for ESD Protection General Description LGS0T12LT1G The LGS0T12LT1G is a transient voltage suppressor designed to protect components which are connected to data and transmission lines against ESD. It clamps


    Original     		LGS0T12LT1G LGS0T12LT1G 8/20s) IEC61000-4-2 IEC61000-4-5 195mm 150mm 10Reel/Inner 30KPCS/Inner diode transient 15KV LGSOT04LT1G LGSOT05LT1G LGSOT08LT1G PDF

    N5 npn transistor

    Abstract: Marking N5
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTC144ELT1G zApplications Inverter, Interface, Driver 3 zFeatures 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input


    Original     		LDTC144ELT1G OT-23 N5 npn transistor Marking N5 PDF

    L9014

    Abstract: L9015QLT1G L9015RLT1G L9015SLT1G
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9015XLT1G FEATURE 3 ƽComplementary to L9014. ƽ We declare that the material of product compliance with RoHS requirements. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping


    Original     		L9015XLT1G L9014. L9015QLT1G 3000/Tape L9015QLT3G 10000/Tape L9015RLT1G L9015RLT3G L9014 L9015QLT1G L9015RLT1G L9015SLT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Band Switching Diode L1SS356T1G z Applications High frequency switching z Features 1 1 Small surface mounting type. 2) High reliability. 3) We declare that the material of product compliance with RoHS requirements. z Construction


    Original     		L1SS356T1G OD-323 PDF

    LESD9D5

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. LESD9D3.3T5G ESD PROTECTION DIODE Discription The LESD9D3.3T5G is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of


    Original     		OD-923 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723 OD-923) 10Reel/Inner LESD9D5 PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. LESDA6V1W5T1G Quad Array for ESD Trotection General Description Features The LESDA6V1W5T1G is a monolithic suppressor designed to protect components connected to data and transmission lines against ESD. The device clamp the voltage just above the logic level supply


    Original     		IEC61000-4-2 OT-353 PDF

    L1SS181LT1G

    Abstract: 1N020
    Text: LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching L1SS181LT1G Application 3 z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.) 1 z We declare that the material of product


    Original     		L1SS181LT1G OT-23 L1SS181LT1G 1N020 PDF

    L74VHC1GT07

    Abstract: T07 marking t07 marking sot23 marking code 10 sot23 sot23-5 transistor T1 A114 A115 C101 JESD22 JESD22-A115
    Text: LESHAN RADIO COMPANY, LTD. Noninverting Buffer with Open Drain Output with LSTTL–Compatible Inputs L74VHC1GT07 The L74VHC1G07 is an advanced high speed CMOS buffer with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		L74VHC1GT07 L74VHC1G07 L74VHC1GT01 L74VHC1GT07 T07 marking t07 marking sot23 marking code 10 sot23 sot23-5 transistor T1 A114 A115 C101 JESD22 JESD22-A115 PDF

    MSD7000

    Abstract: MSD700 LMBT6520LT1G
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistor We declare that the material of product compliance with RoHS requirements. LMBT6520LT1G Ordering Information Device Marking Shipping LMBT6520LT1G 2Z 3000/Tape&Reel LMBT6520LT3G 2Z 10000/Tape&Reel 3 1 2 MAXIMUM RATINGS


    Original     		LMBT6520LT1G 3000/Tape LMBT6520LT3G 10000/Tape OT-23 MSD7000 MSD700 LMBT6520LT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. LBCW68GLT1G ORDERING INFORMATION Device 3 Marking Shipping LBCW68GLT1G DG 3000/Tape&Reel LBCW68GLT3G DG 10000/Tape&Reel


    Original     		LBCW68GLT1G 3000/Tape LBCW68GLT3G 10000/Tape 236AB) OT-23 PDF

    LESDA6V1W6T1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. LESDA6V1W6T1G Transil array for data protection General Description Features The LESDA6V1W6T1G is a monolithic suppressor designed to protect components connected to data and transmission lines against ESD. The device clamp the voltage just above the logic level supply


    Original     		IEC61000-4-2 OT-363 LESDA6V1W6T1G PDF

    SC-89

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE LMBT3904TT1G ƽSimplifies Circuit Design. ƽ We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION 3 Device Marking Shipping LMBT3904TT1G MA


    Original     		LMBT3904TT1G 3000/Tape LMBT3904TT3G 10000/Tape SC-89 463C-01 463C-02. SC-89 PDF