2822
Abstract: IDT7M4048 7M4048 cmos static ram 512k 5v
Text: 512K x 8 CMOS STATIC RAM MODULE IDT7M4048 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-density 4 megabit CMOS Static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 StaticRAMs • Fast access time: 25ns max.
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IDT7M4048
32pin,
IDT7M4048
32-pin
MIL-STD-883,
7M4048
2822
7M4048
cmos static ram 512k 5v
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7M4048
Abstract: cmos static ram 512k 5v TA 7074 idt CMOS RAM lccs 28 footprint 2822 IDT7M4048
Text: 512K x 8 CMOS STATIC RAM MODULE IDT7M4048 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-density 4 megabit CMOS Static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 StaticRAMs • Fast access time: 25ns max.
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IDT7M4048
32pin,
IDT7M4048
32-pin
MIL-STD-883,
7M4048
7M4048
cmos static ram 512k 5v
TA 7074
idt CMOS RAM
lccs 28 footprint
2822
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CERAMIC CHIP CARRIER LCC 68 socket
Abstract: INTEL 24 PIN CERAMIC DUAL-IN-LINE PACKAGE LCCs 68 socket ic 7912 64 ceramic quad flatpack CERAMIC PIN GRID ARRAY CPGA lead frame CERAMIC LEADLESS CHIP CARRIER LCC 32 socket PCB footprint cqfp 132 Single Edge Contact (S.E.C.) Cartridge: 7912 pin configuration
Text: Introduction 1.1 1 Overview Of Intel Packaging Technology As semiconductor devices become significantly more complex, electronics designers are challenged to fully harness their computing power. Today’s products can feature more than seven million transistors and device count is expected to increase to 100 million by the year 2000. With a
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Untitled
Abstract: No abstract text available
Text: XlHE Preliminary Information XM28HC010 1 Megabit Module 128K X 8 Bit 5 Volt, Byte Alterable High Speed E2PROM TYPICAL FEATURES * High Speed 1 Megabit 128K x 8 E2PROM Module * Access Time of 70 ns at -55°C to +125°C * SIMPLE Byte and Page Write —Single 5 Volt Supply
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XM28HC010
X28VC256
32-Pin
X28C010
128-byte
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Untitled
Abstract: No abstract text available
Text: Issue 1.2: March 1988 ME8128SC-15/20/25 128K X 8 CMOS EEPROM Module ME8128SC •h.l,: I ^ ' M .ix h ‘ PRELIMINARY INFORMATION 131,072 x 8 CMOS High Speed EEPROM Features Pin D efinition Fast Access Times of 150/200/250 nS Half Populated Version ME864SC Available
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ME8128SC-15/20/25
ME8128SC
ME864SC
64bytes
MIL-STD-883C
ME8128SCLI-10
8128SC-15/20/25
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Untitled
Abstract: No abstract text available
Text: bfiE D • 4ÛSS771 DOlMMTl 20T ■ 512K x 8 CMOS STATIC RAM MODULE IDT IDT7M4048 INTEGRATED DEVICE FEATURES: DESCRIPTION: • High-density 4 megabit C M O S Static R A M module T h e ID T 7 M 40 48 is a 4 megabit 5 1 2K x 8 C M O S Static R AM m odule constructed on a co-fired ceram ic substrate
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IDT7M4048
32-pin,
32-pin
MIL-STD-883,
7M4048
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IC 2822
Abstract: IDT7M4048 7M40 ex 2822 cs107
Text: 512K x 8 CMOS STATIC RAM MODULE IDT7M4048 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-density 4 megabit CMOS Static RAM module The IDT7M4048 is a 4 megabit 512K x 8 CMOS Static RAM module constructed on a co-fired ceramic substrate
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IDT7M4048
32pin,
IDT7M4048
32-pin
MIL-STD-883,
7M4048
00212b]
IC 2822
7M40
ex 2822
cs107
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Untitled
Abstract: No abstract text available
Text: 3-D PACKAGING TECHNOLOGY The electronic industry is always trying to reduce the physical size of circuit design implementations. This is especially true today. Circuit designs have increased in complexity and sophistication beyond the ability of traditional
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I/02A.
I/02B
I/03B
I/03A
I/04A
I/05A
I/06A
I/07A
I/07B
I/06B
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L1122
Abstract: No abstract text available
Text: 512K X 8 CMOS STATIC RAM MODULE IDT7M4048 Integrated Device Technology, inc. FEATURES: DESCRIPTION: • High-density 4 megabit CMOS Static RAM module The IDT7M4048 is a 4 megabit 512K x 8 CM OS Static RAM module constructed on a co-fired ceramic substrate
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IDT7M4048
32-pin,
32-pin
0021Bb0
L-STD-883,
7M4048
L1122
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Am7000
Abstract: dash-1 20998 alu 74181 AM722 amd 2901 alu AM700 A31A MUX21L
Text: ADV MICRO P LA /P LE /A RRAY S 7 b ]>Ë| Q 2 5 7 5 5 L i G G B G ' m 0257526 ADV M I C R O PL A/ P L E / A R R AY S □ |T 76C 20991 Am7000 Series" T-42-11-09 Silicon-Gate HCMOS Logic Arrays PRELIMINARY > 3 » DISTINCTIVE CHARACTERISTICS o Silicon-gate 2.0-micron drawn HCMOS technology
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Am7000
T-42-11-09
AIS-WCP-12
5M-2/86-0
dash-1
20998
alu 74181
AM722
amd 2901 alu
AM700
A31A
MUX21L
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Untitled
Abstract: No abstract text available
Text: 512K x 8 CMOS STATIC RAM MODULE PRELIMINARY IDT7M4048 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 4 megabit CMOS static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 static RAMs • Fast access time: 17ns max.
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IDT7M4048
110mA
800jjA
32pin,
IDT7M4048
200mV
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a1601
Abstract: No abstract text available
Text: INTEGRATED DEVICE IDT M Ô 2 S 7 7 1 O O l M M S b 104 bflE D 32K x 32 128K x 32 CMOS STATIC RAM MODULES IDT7M4003 IDT7M4013 In te g ra te d D evice Technology, Inc. FEATURES DESCRIPTION • • The IDT7M4003/4013 are high-speed, high-density 1Mb/ 4Mb CMOS Static RAM modules constructed on a multilayer
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IDT7M4003
IDT7M4013
7M4003
7M4013
66-pin
MIL-STD-883,
7M4013
a1601
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Untitled
Abstract: No abstract text available
Text: böE » • 4S2S771 00144*11 20T ■ 512Kx8 IDT IDT7M4048 CMOS STATIC RAM MODULE INTEGRATED DEVICE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-density 4 megabit C M O S Static RA M module T h e ID T 7 M 4 0 4 8 is a 4 megabit 5 1 2K x 8 C M O S Static
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512Kx8
4S2S771
IDT7M4048
32-pin
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Untitled
Abstract: No abstract text available
Text: 512K x 8 CMOS STATIC RAM MODULE PRELIMINARY IDT7M4048 Integrateci Device Technology, Inc. FEATURES: DESCRIPTION: • High density 4 megabit CM O S static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 static RAMs • Fast access time: 17ns max.
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IDT7M4048
110mA
32pin,
IDT7M4048
200mV
JDT7M4048
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2824 footprint dimension
Abstract: 2824 footprint 2B24
Text: 256K x 8 CMOS STATIC RAM MODULE PRELIMINARY IDT7M4068 Integrated D evice T ech n o logy, Inc. FEATURES: DESCRIPTION: • High density 2 megabit C M O S static RAM module • Equivalent to the JE D E C standard for future monolithic 256 K x 8 static RAMs • Fast access time: 17ns max.
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IDT7M4068
110mA
700jiA
400jiA
32-pin,
IDT7M4068
2824 footprint dimension
2824 footprint
2B24
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Q1932
Abstract: No abstract text available
Text: 47E D I N T E G R A T E D D E VI CE Bi 4 Ö 2 5 7 7 1 OGlGlSt. T • 512K x 8 CMOS STATIC RAM MODULE IDT PRELIMINARY IDT7M4048 -m -v z -w In teg rated D evice T echnology, Inc* FEATURES: DESCRIPTION: • High density 4 megabit C M O S static RAM module • Equivalent to the J E D E C standard for future monolithic
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IDT7M4048
800nA
32-pin
IDT7M4048
M655771
Q1932
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Untitled
Abstract: No abstract text available
Text: 256K x 8 CMOS STATIC RAM MODULE PRELIMINARY IDT7M4068 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 2 megabit CM O S static RAM module • Equivalent to the JEDEC standard for future monolithic 256K x 8 Static RAMs • Fast access time: 17ns max.
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110mA
700nA
32pin,
IDT7M4068
IDT7M4068
200mV
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7M4013
Abstract: No abstract text available
Text: INTEGRATED DEVICE 4ÖZ5771 CIOmMSb 104 LflE D 32K x 32 128K x 32 CMOS STATIC RAM MODULES IDT IDT7M4003 IDT7M4013 I n te g r a te d D ev ic e T e c h n o lo g y , In c . FEATURES DESCRIPTION • • The ID T 7 M 40 03/4 013 are high-speed, high-density 1M b/
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Z5771
IDT7M4003
IDT7M4013
7M4003
7M4013
66-pin
7M4003
7M4013
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IBM 1M x 4
Abstract: 11D1360BA 11E1360BB
Text: IBM11D1360BB IBM11D1360BA IBM11E1360BB IBM11E1360BA 1M x 36 D R A M M odule Features All inputs & outputs are fully TTL & CMOS compatible Fast Page Mode access cycle Refresh Modes: RAS-Only and CBR 1024 refresh cycles distributed across 16ms 10/10 Addressing Row/Column
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IBM11D1360BB
IBM11D1360BA
IBM11E1360BB
IBM11E1360BA
72-Pin
110ns
130ns
IBM11D1360BA/B
72-pinle
MMDS14DSU-00
IBM 1M x 4
11D1360BA
11E1360BB
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oSC-70
Abstract: No abstract text available
Text: 256K x 8 CMOS STATIC RAM MODULE PRELIMINARY IDT7M4068 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 2 megabit C M O S static RAM module • Equivalent to the JE D E C standard for future monolithic 256K x 8 static RAMs • Fast access time: 17ns max.
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IDT7M4068
110mA
700nA
32pin,
IDT7M4068
oSC-70
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Untitled
Abstract: No abstract text available
Text: IBM 11 M8645H 8M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 8Mx64 Extended Data Out Mode DIMM • Optimized for ECC applications • System Performance Benefits: -Buffered inputs except RAS, Data • Performance:
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M8645H
8Mx64
104ns
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Untitled
Abstract: No abstract text available
Text: IBM11M8645H 8M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for ECC applications • System Performance Benefits: • 8Mx64 Extended Data Out Mode DIMM -Buffered inputs except RAS, Data • Performance:
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IBM11M8645H
8Mx64
104ns
47fl5
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RL7320
Abstract: RL76 8 bit barrel shifter T-42-11-09 transistor 2N RL7220 8 BIT ALU by 74181
Text: RAYTHEONi 7597360 SEMICONDUCTOR RAYTHEON» AO De 7ST73bO SEMICONDUCTOR DDDS32T 80C 0 5 3 2 9 Product Specifications Configurable Gate Arrays 5 T-42-11-09 RL7000 Series Raytheon RL7000 Series Silicon-Gate HCMOS Logic Arrays Features • Silicon-gate 2.0/u (drawn HCMOS technology
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7ST73bO
DDDS32T
T-42-11-09
RL7000
MUX21LA)
16-Bit
RL7320
RL76
8 bit barrel shifter
transistor 2N
RL7220
8 BIT ALU by 74181
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 M 8 7 3 0 H B 8M X 72 DRAM M ODULE Features • 168 Pin JE D E C Standard, 8 Byte Dual In-line Memory Module • Au contacts • Optimized for ECC applications • System Performance Benefits: • 8Mx72 Fast Page Mode DIMM -60 - Buffered inputs except RAS, Data
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8Mx72
110ns
03H7154
T00bl4fc>
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