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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SSP5N80A Advanced Power MOSFET FEATURES B^DSS - 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = 2.2 a ■ Lower Input Capacitance ■ Improved Gate Charge lD = 5 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 \|iA (Max.) @ VDS = 800V	OCR Scan	PDF	SSP5N80A iti4142 003b32fl O-220 00M1N 7Tb4142 DD3b33D
Untitled Abstract: No abstract text available Text: KM48V514DT CMOS DRAM ELECTRONICS 512K x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time	OCR Scan	PDF	KM48V514DT 512Kx8 KM48V514DT) 00357bl
Untitled Abstract: No abstract text available Text: IRLM210A Advanced Power MOSFET FEATURES b v dss = 200 V • Avalanche Rugged Technology 1.5 Î2 ■ Rugged Gate Oxide Technology ^DS on — ■ Lower Input Capacitance lD = 0.77 A ■ Improved Gate Charge ■ Extended Safe Operating Area SO T-223 ■ Lower Leakage Current : 10 \|iA (M ax.) @ VDS = 200V	OCR Scan	PDF	IRLM210A T-223 0D311Ã 003b323
Untitled Abstract: No abstract text available Text: 2N6520 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C C h a ra c te ris tic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 2 5 °C	OCR Scan	PDF	2N6520 D0250SG lb414E 002SDS1
Untitled Abstract: No abstract text available Text: IRLS520A Advanced Power MOSFET FEATURES • Logic Level Gate Drive ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA Max. @ VDS = 100V	OCR Scan	PDF	IRLS520A lb414E 7TL4142 GG3T24B