land pattern for TSOP
Abstract: 7402 ED-7402 DATA SHEET 7402 7402 data sheet ed 012GL 2008 land pattern for TSOP 2
Text: TSOP 1 LAND PATTERN DIMENSIONS CONDITIONAL TERMINAL : LENGTH OF SOLDERED PART (L) HD D I2 β1 MID HD+2 β 2 β2 L b b2 Dimension Parameter e 0.50 β1 β2 γ 0.20 0.20 0.25 b2 e L1 MID I2 GDMIN. =HDMIN. −2LMAX. MID=GDMIN. −2 β 1 I2 (HDMAX. +2 β 2−MID)/2
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ED-7402-3
land pattern for TSOP
7402
ED-7402
DATA SHEET 7402
7402 data sheet
ed 012GL 2008
land pattern for TSOP 2
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land pattern for TSOP 2-44
Abstract: Wells programming adapter TSOP 48 intel 44-lead psop land pattern for TSOP 56 pin F9232 E28F016SA70 tsop tray matrix outline wells 648-0482211 memory card thickness 29f200 tsop adapter
Text: D Small Outline Package Guide 1996 296514-006 8/19/97 5:26 PM FRONT.DOC Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions
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land pattern for TSOP
Abstract: 7402 DATA SHEET 7402 land pattern for TSOP 2
Text: TSOP 1 LAND PATTERN DIMENSIONS CONDITIONAL TERMINAL : LENGTH OF SOLDERED PART (Lp) I2 β1 MID HD+2 β 2 Lp β2 b b2 Dimension Parameter e 0.50 β1 β2 γ 0.20 0.20 0.25 e b2 L1 MID A3=0.25 HD D I2 GDMIN. =HDMIN. −2Lp MAX. MID=GDMIN. −2 β 1 I2 (HDMAX. +2 β 2 −MID)/2
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ED-7402-3
land pattern for TSOP
7402
DATA SHEET 7402
land pattern for TSOP 2
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land pattern for TSOP
Abstract: land pattern for TSOP 2
Text: TSOP 2 LAND PATTERN DIMENSIONS CONDITIONAL TERMINAL : LENGTH OF SOLDERED PART (L) HE E I2 β1 MIE HE+2 β 2 L β2 b b2 Dimension Parameter e 1.27 0.80 β1 β2 γ 0.20 0.20 0.30 to 0.57 0.20 0.20 0.30 b2 e L1 MIE I2 GEMIN. =HEMIN. −2LMAX. MIE=GEMIN. −2β 1
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ED-7402-4A
land pattern for TSOP
land pattern for TSOP 2
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land pattern for TSOP
Abstract: land pattern for TSOP 2
Text: TSOP 2 LAND PATTERN DIMENSIONS CONDITIONAL TERMINAL : LENGTH OF SOLDERED PART (Lp) I2 β1 MIE HE+2 β 2 Lp β2 b b2 Dimension Parameter e 1.27 0.80 β1 β2 γ 0.20 0.20 0.30 to 0.57 0.20 0.20 0.30 e b2 L1 MIE A3=0.25 HE E I2 GEMIN. =HEMIN. −2Lp MAX. MIE=GEMIN. −2 β 1
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ED-7402-4A
land pattern for TSOP
land pattern for TSOP 2
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TSOP-48 pcb LAYOUT
Abstract: str 6654 pin details of str f 6654 pin details of str W 6654 amd socket 940 pinout str W 6654 land pattern tsop 66 56-Lead TSOP Package 28F002BC 28F010
Text: D Small Outline Package Guide 1996 296514-006 8/19/97 5:26 PM FRONT.DOC Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions
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LPC2468 reflow solder profile
Abstract: 0.65mm pitch BGA 1mm pitch BGA AN10778 MO-275 TFBGA208 LFBGA32 LPC2468 pcb SOT1018-1 nxp cross
Text: AN10778 PCB layout guidelines for NXP MCUs in BGA packages Rev. 01 — 22 January 2009 Application note Document information Info Content Keywords LPC2220, LPC2292, LPC2364, LPC2368, LPC2458, LPC2468, LPC2470, LPC2478, LPC2880, LPC2888, LPC3130, LPC3131, LPC3151, LPC3152, LPC3153, LPC3154, LPC3180/10, LPC3220,
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AN10778
LPC2220,
LPC2292,
LPC2364,
LPC2368,
LPC2458,
LPC2468,
LPC2470,
LPC2478,
LPC2880,
LPC2468 reflow solder profile
0.65mm pitch BGA
1mm pitch BGA
AN10778
MO-275
TFBGA208
LFBGA32
LPC2468 pcb
SOT1018-1
nxp cross
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IPC-SM-782
Abstract: IPCSM-782 IPC-782 IPC782 SOJ 44 PCB land MELF "Land Pattern" land pattern for TSOP J-Lead, QFP ceramic
Text: Number One Systems IPC-SM-782 Library Supplementary Surface Mount Library for Easy-PC For Windows IPC-SM-782 Library The optional IPCSM-782 library contains supplementary component IPC782.CML and PCB symbol (IPC782.PSL) libraries for use with any variant of Easy-PC For Windows,
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IPC-SM-782
IPCSM-782
IPC782
IPC-SM-782,
IPC782"
IPC-782
SOJ 44 PCB land
MELF "Land Pattern"
land pattern for TSOP
J-Lead, QFP ceramic
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BGA reflow guide
Abstract: Senju Sn3.0Ag0.5Cu land pattern for TSOP 2 86 PIN 52-pin TSOP ED-7404A senju solder paste vapor phase printer component wiring diagram for float switch with pressure tank TSOP 66 Package thermal resistance land pattern for TSOP 2 54 pin
Text: Renesas Surface Mount Package Rev.2.00 2003.12.1 Renesas Surface Mount Package User's Manual REJ11K0001-0200Z Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is
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REJ11K0001-0200Z
BGA reflow guide
Senju Sn3.0Ag0.5Cu
land pattern for TSOP 2 86 PIN
52-pin TSOP
ED-7404A
senju solder paste vapor phase
printer component
wiring diagram for float switch with pressure tank
TSOP 66 Package thermal resistance
land pattern for TSOP 2 54 pin
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land pattern for TSOP 2 54 pin
Abstract: land pattern for TSOP 56 pin TSOP 54 land pattern 40013A land pattern for TSOP
Text: n H igh p e rfo rm a n c e 1 M X 8 /5 1 2 K X 1 6 2.2V CMOS Flash EEPROM AS29LL8ÜÖ II 1 M X 8 / 5 1 2 K X 1 6 CMOS Flash EPROM Advance information Features •O rganization: 1M x 8/512K x 16 • Sector architecture - • Low power consumption - 8 mA typical read current
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AS29LL8Ü
8/512K
48-pin
land pattern for TSOP 2 54 pin
land pattern for TSOP 56 pin
TSOP 54 land pattern
40013A
land pattern for TSOP
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land pattern for PSOP
Abstract: No abstract text available
Text: Plastic dual in-line package PDIP 20 pin 300 mil Min A Al B b c D E El c tA L a S 0.010 0.046 0.018 0.008 28 pin 300 mil Max 0.175 0.054 0.024 0.014 0.980 0.310 0.290 0.263 0.293 0.100 BSC 0.310 0.3S0 0.130 0.110 0° 15° 0.040 Min 0.010 0.0.58 0.016 C.008
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MS-016
1-10007-A.
land pattern for PSOP
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Untitled
Abstract: No abstract text available
Text: H ig h P e rfo rm a n c e lMx4 CMOS DRAM A S4C 14400 h II , 1 1M x 4 CMOS DRAM fast page m ode Prelim inary inform ation Features • 1 0 2 4 r e f r e s h c y c le s , 1 6 m s r e f r e s h in te r v a l • O r g a n iz a t io n : 1 , 0 4 8 ,5 7 6 w o r d s x 4 b its
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o00oo
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Untitled
Abstract: No abstract text available
Text: d t ) LOW POWER 3.3V CMOS FAST SRAM 256K 32K x 8-BIT) IDT71V256SA In tegrated D evice T echnology, Inc. FEATURES DESCRIPTION • Ideal for high-performance processor secondary cache • Commercial (0° to 70°C) and Industrial (-40° to 85°C) temperature options
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IDT71V256SA
10/12/15/20ns
28-pin
IDT71V256SA
144-bit
727-C11«
492-M74
10-U4-2070
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Untitled
Abstract: No abstract text available
Text: H igh perform ance 128KX8 5 V CMOS Flash EEPROM H A S29F010 II 1 2 8 K X 8 CMOS Flash EEPROM Features • O r g a n iz a t io n : 12 8 K x 8 b its • JEDEC s ta n d a r d w r i t e c y c le c o m m a n d s - p ro te c ts da ta fro m accidental changes • S e c to r E rase a r c h ite c tu r e
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128KX8
S29F010
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Untitled
Abstract: No abstract text available
Text: jdt 3.3V CMOS STATIC RAM 4 MEG 256K x 16-BIT) PRELIMINARY I n t e g r a t e d D e v i c e T e c h n o lo g y , In c . FEATURES: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center P ow er/G N D pinout for reduced noise. • Equal access and cycle times
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16-BIT)
10/12/15ns
44-pin,
IDT71V416
194304-bit
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DD27D
Abstract: land pattern for TSOP 2 50 MB257 TM 1828
Text: 3.3V CMOS STATIC RAM 32Kx 16-BIT PRELIMINARY IDT71V008 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 32K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times — 10/12/15/20ns • One Chip Select plus one Output Enable pin
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16-BIT
IDT71V008
10/12/15/20ns
44-pin
IDT71V008
288-bit
910-338-207Q
DD27D
land pattern for TSOP 2 50
MB257
TM 1828
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land pattern for TSOP 2 44 PIN
Abstract: land pattern for TSOP 2 54 pin land pattern for TSOP 56 pin psop 44 land pattern PQFP 208
Text: High perform ance 512KX32 CMOS SGRAM 16 Megabit CMOS synchronous graphic RAM Advance information • Organization - 131,072 words x 32 bits x 4 banks • Fully synchronous - All signals referenced to positive edge of dock • Four internal banks controlled by BA0/BA1 bank select
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512KX32
AS4LC512K32SG0
100-pin
land pattern for TSOP 2 44 PIN
land pattern for TSOP 2 54 pin
land pattern for TSOP 56 pin
psop 44
land pattern PQFP 208
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woy transistor
Abstract: No abstract text available
Text: LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT ADVANCE INFORMATION IDT71T024L Integrated D e v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • • • • • • • The IDT71T024L is a 1,048,576-bit very low-pow er Static RAM organized as 1 2 8 K x 8 . It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,
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128KX
IDT71T024L
150ns,
200ns
32-pin
IDT71T024L
576-bit
10-338-207Q
woy transistor
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Untitled
Abstract: No abstract text available
Text: LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71V024L Integrated D e v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • • • • • • • The ID T71V024L is a 1,048,576-bit very low-pow er Static RAM organized as 1 2 8 K x 8 . It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,
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128Kx
IDT71V024L
T71V024L
576-bit
10-338-207Q
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land pattern for TSOP 2 44 PIN
Abstract: No abstract text available
Text: LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71V024L Integrated D e v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • • • • • • • The ID T71V024L is a 1,048,576-bit very low-pow er Static RAM organized as 1 2 8 K x 8 . It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,
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128Kx
IDT71V024L
100ns
32-pin
T71V024L
576-bit
10-338-207Q
land pattern for TSOP 2 44 PIN
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ln 3624
Abstract: ansi y14.5m-1982 decimal .xxxx 71V416S15
Text: PRELIMINARY IDT71V416 3.3V CMOS STATIC RAM 4 MEG 256Kx 16-BIT I n t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center Power /GND pinout for reduced noise. • Equal access and cycle times
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256Kx
16-BIT)
IDT71V416
8/10/12/15ns
44-pin,
IDT71V416
194304-bit
high-reliabil005
MS-027,
ln 3624
ansi y14.5m-1982 decimal .xxxx
71V416S15
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Untitled
Abstract: No abstract text available
Text: LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT ADVANCE INFORMATION IDT71T024 I n te g r a te d D e v iz e T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 1.8V to 2.7V • Commercial (0° to 70°C) and Industrial (0° to 70°C)
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128KX
IDT71T024
150ns,
200ns
10jxA
32-pin,
46-BALL
IDT71T024
576-bit
10-338-207Q
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Untitled
Abstract: No abstract text available
Text: H igh Perform ance lMx4 CMOS DRAM |B AS4C14405 A ! M x 4 CMOS EDO DRAM Preliminary information Features • O r g a n iz a t io n : 1 , 0 4 8 , 5 7 6 w o r d s x 4 b its • 1 0 2 4 r e f r e s h c y c le s , 1 6 m s r e f r e s h in t e r v a l • H ig h sp e ed
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AS4C14405
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ed9a
Abstract: woy transistor
Text: LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT ADVANCE INFORMATION IDT71T024 I n te g r a te d D e v iz e T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 1.8V to 2.7V • Commercial (0° to 70°C) and Industrial (0° to 70°C)
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128KX
IDT71T024
150ns,
200ns
10jxA
32-pin,
46-BALL
IDT71T024
576-bit
10-338-207Q
ed9a
woy transistor
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