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    M7707

    Abstract: rd201 PLD-10 imv D6-11 BV 726 C 1 Converter w5753 fd187 sGCT function PR 161A RD202
    Text: O K I Semiconductor MSM7707 Baseband integration LSI device for PHS GENERAL DESCRIPTION The MSM7707 is an LSI device with an ADPCM CODEC function, jt/4 shift QPSK modulation/ demodulation function and a TDMA-TDD function required for PHS Personal Handy phone


    OCR Scan     		PDF MSM7707 MSM7707 32kbps) Hz/12 b724240 0D257 TQFP100-P-1414-0 M7707 rd201 PLD-10 imv D6-11 BV 726 C 1 Converter w5753 fd187 sGCT function PR 161A RD202

    1X3 diode

    Abstract: 04ti
    Text: O K I electronic components PC I 1X2, 1X3 SERIES Unidirectional Optical M O S Relay GENERAL DESCRIPTION The OCM1X2 and OCM1X3 Series are unidirectional DC optical MOS relays, offering lower drive current than the OCM1XO / 1X1 Series. The input portion is a Ga As infrared light emitting diode. The


    OCR Scan     		PDF 10-mA b72424D 24E4G L7E4240 1X3 diode 04ti

    MSM5116180-70

    Abstract: MSM5116180-80
    Text: O K I Semiconductor MSM5116180 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116180 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5116180_ 576-Word 18-Bit MSM5116180 cycles/64ms MSM5116180-70 MSM5116180-80

    Bv 42 transistor

    Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
    Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V16190 576-Word 18-Bit MSM51V16190 cycles/64ms Bv 42 transistor M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K

    Bv 42 transistor

    Abstract: tsop50 42-PIN MSM5116190-70 MSM5116190-80
    Text: O K I Semiconductor MSM5 1 16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5116190 576-Word 18-Bit MSM5116190 cycles/64ms Bv 42 transistor tsop50 42-PIN MSM5116190-70 MSM5116190-80

    Untitled

    Abstract: No abstract text available
    Text: O K I electronic components KGL2135 1.7 GHz Two-Modulus Prescaler GENERAL DESCRIPTION The KGL2135 is a two-modulus prescaler designed for PLL frequency synthesizers. The device divides the input frequency by 128 or 130, with mode selection. FEATURES • Toggle frequency: 1.7 GHz


    OCR Scan     		PDF KGL2135 KGL2135 2M540 DD22fibS b7E4240 L7E4240

    MSM6641

    Abstract: gd2403
    Text: O K I Semiconductor MSM6641/6641 E-xx Built-in Rem ote Control Transm ission C ircuit 4-B it M icro co n tro ller GENERAL DESCRIPTION The M SM 6641, pow ered by a single battery, is a 4-bit m icrocontroller fabricated in O K I's lowvoltage C M O S technology. A rem ote-control output generator built into this device provides


    OCR Scan     		PDF MSM6641/6641E-XX MSM6641, MSM6641 MSM6641) MSM6641E) S42M0 gd2403

    26-PIN

    Abstract: MSM514 ZIP20-P-400
    Text: O K I Semiconductor MSM514101 B/BL 4,194,304-Word x 1-Bit DYNAMIC RAM : NIBBLE MODE TYPE DESCRIPTION The MSM514101B/BL is a new generation dynam ic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514101B/BL is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM514101B/BL 304-Word MSM514101B/BL 1024cycles/16ms, 128ms A0-A10 26-PIN MSM514 ZIP20-P-400

    a11u

    Abstract: taser circuit 42-PIN DD1752
    Text: O K I Semiconductor MSM51V16160_ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16160 is a new generation Dynamic RAM organized as 1,048,576-word x 16-bit configuration. The technology used to fabricate the MSM51V16160 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V16160_ 576-Word 16-Bit MSM51V16160 cycles/64ms a11u taser circuit 42-PIN DD1752

    Bv 42 transistor

    Abstract: tsop50 42-PIN MSM5117190-70 MSM5117190-80 SOJ42-P-400
    Text: OKI Semiconductor MSM5117190 1,048,576-Word x 18-Bit D Y N A M IC RA M : FAST P AG E M O D E TYPE DESCRIPTION The MSM5117190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5117190 576-Word 18-Bit MSM5117190 cycles/32ms Bv 42 transistor tsop50 42-PIN MSM5117190-70 MSM5117190-80 SOJ42-P-400

    LM1240

    Abstract: fujikura pressure 103AT SENSOR
    Text: OKI Semiconductor MSM64167-002 Clo ck with Weather Forecasting Function GENERAL DESCRIPTION This manual explains the functions, programming specifications, and operations of the standard clock program with built-in-weather forecasting function. The standard clock program uses the


    OCR Scan     		PDF MSM64167-002 MSM64167-002 12-hour/24-hour b724240 80-PIN QFP80-P-1420-K QFP84-P-1420-BK LM1240 fujikura pressure 103AT SENSOR

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM531001B 131,072-Word x 8-Bit Mask ROM DESCRIPTION The OKI MSM531001B is a high-speed silicon gate CMOS Mask ROM with 131,072-word x 8-bit capacity. The MSM531001B operates on a single 5.0 V power supply and is TTL compatible. The chips asynchro­


    OCR Scan     		PDF MSM531001B 072-Word MSM531001B L7E4240

    MSM51V17180-70

    Abstract: MSM51V17180-80
    Text: O K I Semiconductor MSM51V17180_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17180 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17180 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V17180 576-Word 18-Bit MSM51V17180 MSM51VI7180 2048cycles/32ms MSM51V17180-70 MSM51V17180-80

    32-PIN

    Abstract: MSM5116900-70 MSM5116900-80 B724e
    Text: O K I Semiconductor MSM5116900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM5116900 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5116900 152-Word MSM5116900 cycles/64ms 32PIN SOJ32-P-4QO 42PIN 32-PIN MSM5116900-70 MSM5116900-80 B724e

    Untitled

    Abstract: No abstract text available
    Text: O K I electronic components 0L5112L_ 1.55 |im DFB Laser Butterfly Module GENERAL DESCRIPTION The OL5112L is a 1.55 [im DFB laser in a 14-pin "butterfly" package. Having rated output power 2 mW, this laser can be used in a telecom applications and high speed WDM systems.


    OCR Scan     		PDF 0L5112L_ OL5112L 14-pin 2424Q G0255Q5 OL51121- OL5112L L7E4240

    Untitled

    Abstract: No abstract text available
    Text: O K I Sem iconductor M SM6650 External ROM Drive Speech Synthesis LSI GENERAL DESCRIPTION MSM6650, a successor to OKI's MSM6376 speech synthesis LSI, can externally store d ata by directly connecting a m axim um 64 M bit ROM or EPROM. The PCM m ethod is ad d ed to the


    OCR Scan     		PDF SM6650 MSM6650, MSM6376 12-bit MSM6650 MSM6650

    a719

    Abstract: ZIP20-P-400 package zip-20 MSM51V4256A MSM51V4256A-10 MSM51V4256A-70 MSM51V4256A-80
    Text: O K I Semiconductor M SM 51V4256A_ 262,144-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V4256A is a 262,144-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V4256A achieves high integration, high-speed operation, and low-power


    OCR Scan     		PDF MSM51V4256A_ 144-Word MSM51V4256A 20-pin 26/20-pin a719 ZIP20-P-400 package zip-20 MSM51V4256A-10 MSM51V4256A-70 MSM51V4256A-80

    oki m6650

    Abstract: m6650 oki msm6376 zd 3.1v CD T3 32 F11 HEM BTU 10/400 AR76 QFP64-P-1420-V1K PRBC MSM6650
    Text: O K I Sem iconductor MSM6650 External ROM Drive Speech Synthesis LSI GENERAL D ESCR IPTIO N MSM6650, a successor to OKI's MSM6376 speech synthesis LSI, can externally store d ata by directly connecting a m axim um 64 M bit ROM or EPROM. The PCM m ethod is ad d ed to the


    OCR Scan     		PDF MSM6650 MSM6650, MSM6376 12-bit MSM6650 00MHz, AR76-202 b724240 M6650 MSM27C101 oki m6650 m6650 oki msm6376 zd 3.1v CD T3 32 F11 HEM BTU 10/400 AR76 QFP64-P-1420-V1K PRBC

    1001 dl pwm

    Abstract: pwm 1001 1002 MSC1190 12v AC to DC CIRCUIT DIAGRAM for led tube lights oki led driver 7-Segment Display Driver with Decoder 3-DIGIT 7-SEGMENT LED DISPLAY
    Text: 5ÔE D • b ? EH2HD 0 0 1 4 S T Ô 3b7 « O K I J O K I Semiconductor M S C 1 1 9 0 O K I %.09 SEMI CONDUCTOR GROUP 7-SEGMENT DRIVER GENERAL DESCRIPTION T he MSC1190 is a Bi-CMOS structure static d isplay driver to directly drive a vacuum fluorescent VF display tube. The driver


    OCR Scan     		PDF 0014STÃ MSC1190 MSC1190 56-pin 35-bit 18Vmax) 1001 dl pwm pwm 1001 1002 12v AC to DC CIRCUIT DIAGRAM for led tube lights oki led driver 7-Segment Display Driver with Decoder 3-DIGIT 7-SEGMENT LED DISPLAY

    transistor W2W

    Abstract: w2w transistor oki Package SOJ 32-PIN A204 MSM51V17900-70 MSM51V17900-80 uras 14
    Text: O K I Semiconductor MSM51V17900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17900 is a new generation Dynamic RAM organized as 2,097,152-word x 9-bit configuration. The technology used to fabricate the MSM51VI7900 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V17900_ 152-Word MSM51V17900 MSM51VI7900 cycles/32ms 32PIN SOJ32-P-4QO 42PIN transistor W2W w2w transistor oki Package SOJ 32-PIN A204 MSM51V17900-70 MSM51V17900-80 uras 14