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    NDT451AN

    Abstract: u1130
    Text: July 1996 National Semiconductor" N D T451AN N-Channel Enhancement Mode Field Effect Transistor F e a tu re s G e n e ra l D e s c rip tio n These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology,


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    NDT451AN OT-223 bSQ1130 NDT451AN u1130 PDF

    NDB4050L

    Abstract: NDP4050L
    Text: National A p r il 1 9 9 6 Semiconductor~ * NDP4050L / NDB4050L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These Features lo g ic level N-Channel enhancem ent m ode • 15A, 50V. RDSI0NI = 0.1Q @ V GS = 5V tran sisto rs are produced using


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    NDP4050L NDB4050L hSD1130 bS01130 004D233 PDF

    tls74

    Abstract: TIS74 3tb 40 TIS73
    Text: Discrete POWER & Signal Technologies Semiconductor“ TIS73 TIS74 N-Channel General Purpose Amplifier This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 54. Absolute Maximum R3tInCJS


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    TIS73 TIS74 LSD1130 tls74 TIS74 3tb 40 PDF