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    L30 DIODE 4 PIN Search Results

    L30 DIODE 4 PIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    L30 DIODE 4 PIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2. Soldering the headers Before using your click board , make sure to solder 1x8 male headers to both left and right side of the board. Two 1x8 male headers are included with the board in the package. GPS2 click 2 1 3 4. Essential features 1. Introduction


    Original     		PDF

    L10C11

    Abstract: L10C11JC15 L10C11JC20 L10C11PC15 L10C11PC20 TMC2011 smd diode Y5
    Text: L10C11 L10C11 DEVICES INCORPORATED 4/8-bit Variable Length Shift Register 4/8-bit Variable Length Shift Register DEVICES INCORPORATED FEATURES DESCRIPTION q Variable Length 4 or 8-bit Wide Shift Register q Selectable Delay Length from 3 to 18 Stages q Low Power CMOS Technology


    Original     		PDF L10C11 TMC2011 24-pin 28-pin L10C11 28-pin L10C11JC15 L10C11JC20 L10C11PC15 L10C11PC20 TMC2011 smd diode Y5

    L10C11

    Abstract: L10C11CC15 L10C11CC20 L10C11CC25 L10C11PC15 L10C11PC20 L10C11PC25 TMC2011 l30 diode smd
    Text: L10C11 L10C11 DEVICES INCORPORATED 4/8-bit Variable Length Shift Register 4/8-bit Variable Length Shift Register DEVICES INCORPORATED FEATURES DESCRIPTION ❑ Variable Length 4 or 8-bit Wide Shift Register ❑ Selectable Delay Length from 3 to 18 Stages ❑ Low Power CMOS Technology


    Original     		PDF L10C11 TMC2011 MIL-STD-883, 24-pin 28-pin L10C11 L10C11CC15 L10C11CC20 L10C11CC25 L10C11PC15 L10C11PC20 L10C11PC25 TMC2011 l30 diode smd

    L10C11JC20

    Abstract: L10C11 L10C11JC15 L10C11PC15 L10C11PC20 TMC2011
    Text: L10C11 L10C11 DEVICES INCORPORATED 4/8-bit Variable Length Shift Register 4/8-bit Variable Length Shift Register DEVICES INCORPORATED FEATURES DESCRIPTION ❑ Variable Length 4 or 8-bit Wide Shift Register ❑ Selectable Delay Length from 3 to 18 Stages ❑


    Original     		PDF L10C11 TMC2011 24-pin 28-pin L10C11 28-pin L10C11JC20 L10C11JC15 L10C11PC15 L10C11PC20 TMC2011

    Untitled

    Abstract: No abstract text available
    Text: Intel StrataFlash Wireless Memory L30 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features • High performance Read-While-Write/Erase ■ Security — 85 ns initial access — 52 MHz with zero wait state, 17 ns clock-todata output synchronous-burst mode


    Original     		PDF 28F640L30, 28F128L30, 28F256L30 64-Mbit 128Mbit 16-Mbit 256-Mbit 16-Kword 8x10x1

    PF48F

    Abstract: 28F128L30 28F256L30 28F640L30 RD48F4000L0ZTQ0 vf bga
    Text: Intel StrataFlash Wireless Memory L30 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features High performance Read-While-Write/Erase — 85 ns initial access — 52 MHz with zero wait state, 17 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode


    Original     		PDF 28F640L30, 28F128L30, 28F256L30 64-Mbit 128Mbit 16-Mbit 256-Mbit 16-Kword 8x10x1 NZ48F3000L0ZTQ0 PF48F 28F128L30 28F256L30 28F640L30 RD48F4000L0ZTQ0 vf bga

    CM1230-02

    Abstract: CM1230 CM1230-04 CM1230-08 L30 diode part marking CM1230-02cp CM1230-08CP
    Text: PRELIMINARY CM1230 2, 4 and 8-Channel Low Capacitance ESD Protection Array Features Product Description • • The CM1230 is a family of 2, 4 and 8 channel, very low capacitance ESD protection diode arrays in CSP form factor. This device is ideal for protecting systems with


    Original     		PDF CM1230 CM1230 178mm CM1230-04 CM1230-08 CM1230-02 CM1230-04 CM1230-08 L30 diode part marking CM1230-02cp CM1230-08CP

    CM1230-02

    Abstract: CM1230-08CP CM1230-04 xtal 32.768 CM1230 CM1230-08 L30 diode part marking micro b usb
    Text: CM1230 2, 4 and 8-Channel Low Capacitance ESD Protection Array Features Product Description • • The CM1230 is a family of 2, 4 and 8 channel, very low capacitance ESD protection diode arrays in CSP form factor. This device is ideal for protecting systems with


    Original     		PDF CM1230 CM1230 178mm CM1230-04 CM1230-08 CM1230-02 CM1230-08CP CM1230-04 xtal 32.768 CM1230-08 L30 diode part marking micro b usb

    338 zener

    Abstract: diode zener ZL 7 ZENER DIODES DZ 6.28 diode zener ZL 8 15B zener diode udz diode
    Text: I 2-pin Mini-mold Zener Diode UDZS Series l External dimensions Units: mm @Application Constant voltage control CA1 tiODF MAI<K @Features I1 l)Extremely compact 2-pin mrnr-mold type for highdensity mounting (UMD2 (USM) ). 2)Due to a wireless structure surge proof


    Original     		PDF OD-323) 338 zener diode zener ZL 7 ZENER DIODES DZ 6.28 diode zener ZL 8 15B zener diode udz diode

    numonyx intel

    Abstract: 28F128L30 28F256L30 RD48F4000L0ZBQ0 RD48F4000L0ZTQ0 PF48F3000 4400p0 Numonyx StrataFlash M18
    Text: Numonyx StrataFlash Wireless Memory L30 28F128L30, 28F256L30 Datasheet Product Features „ „ „ High performance Read-While-Write/Erase — 85 ns initial access — 52 MHz with zero wait state, 17 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode


    Original     		PDF 28F128L30, 28F256L30 16-Mbit: 256-Mbit 16-Kword 64-Kword x32SH x16SB x16/x32 numonyx intel 28F128L30 28F256L30 RD48F4000L0ZBQ0 RD48F4000L0ZTQ0 PF48F3000 4400p0 Numonyx StrataFlash M18

    Parallel Application LM2596

    Abstract: LM2596-ADJ DO3308-223 lm2596adj Capacitor L33 lm2596-12 lm2596 ns lm2596 3.3 negative voltage regulator lm2596 adj
    Text: LM2596 GENERAL DESCRIPTION FEATURES The LM2596 series of regulators are monolithic integrated circuits that provide all the active functions for a step-down buck switching regulator, capable of driving a 3A load with excellent line and load regulation. These devices are available


    Original     		PDF LM2596 LM2596 RL-1284-22-43 RL1500-22 PE-53815 PE-53815-S PE-53821 PE-53821-S Parallel Application LM2596 LM2596-ADJ DO3308-223 lm2596adj Capacitor L33 lm2596-12 lm2596 ns lm2596 3.3 negative voltage regulator lm2596 adj

    251903

    Abstract: No abstract text available
    Text: Intel StrataFlash Wireless Memory L30 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features • High performance Read-While-Write/Erase ■ Software — 85 ns initial access — 52 MHz with zero wait state, 17 ns clock-todata output synchronous-burst mode


    Original     		PDF 28F640L30, 28F128L30, 28F256L30 16-Mbit 256-Mb 16-Kword 128-Mbit 256-Mbit 64-Mbit RD48F2000L0ZTQ0 251903

    NHN0016A

    Abstract: No abstract text available
    Text: LM2675 www.ti.com SNVS129E – MAY 2004 – REVISED JUNE 2005 LM2675 SIMPLE SWITCHER Power Converter High Efficiency 1A Step-Down Voltage Regulator Check for Samples: LM2675 FEATURES DESCRIPTION • Efficiency up to 96% • Available in 8-pin SOIC and PDIP Packages


    Original     		PDF LM2675 SNVS129E LM2675 NHN0016A

    bup3140

    Abstract: BUP 3140 GPT05155 BUP 300 L30 diode 4 pin
    Text: SIEMENS BUP 314D IGBT With Antiparallei Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type BUP 314D fc VCE 1200V 42A Pin 3 E C Package Ordering Code


    OCR Scan     		PDF O-218AB Q67040-A4226-A2 l-30-1996 GPT05155 bup3140 BUP 3140 BUP 300 L30 diode 4 pin

    Untitled

    Abstract: No abstract text available
    Text: L10C11 □ FV IC E S IN C O R P Q R A T F D FEATURES q Variable Length 4 or 8-bit Wide Shift Register q Selectable Delay Length from 3 to 18 Stages q Low Power CMOS Technology q Replaces Fairchild TMC2011 q Load, Shift, and Hold Instructions q Separate Data In and Data Out Pins


    OCR Scan     		PDF L10C11 L10C11 28-pin 11JC20 11JC15 MIL-STD-883

    Untitled

    Abstract: No abstract text available
    Text: uncu L10C11 DEVICES INCORPORATED FEATURES □ Variable Length 4 or 8-bit Wide Shift Register □ Selectable Delay Length from 3 to 18 Stages □ □ □ □ □ □ Low Power CMOS Technology Replaces TRW/RaytheonTMC2011 Load, Shift, and Hold Instructions Separate Data In and Data Out Pins


    OCR Scan     		PDF L10C11 TRW/RaytheonTMC2011 MIL-STD-883, 24-pin 28-pin L10C11 L10C11JC25

    DS0644

    Abstract: DS0744
    Text: FEATURES • 10- 1000 MHz & ■ 18 mA, +5 VDC ■ Low Insertion Loss SP4T MODEL NO. DS0744 & PIN Diode SP4T ■ High Isolation ■ TTL Driver ■ 24 Pin Surface Mount Package ■ See DS0644 For 24 Pin DIP Version RF3 RF COM RF1 A 20 18 17 2 3 4 5 6 8 CONT 2 T C O N T 3


    OCR Scan     		PDF DS0644 DS0744 50XTTLT090 Hz/575 0Q225L DS0744

    diodes sy 360

    Abstract: diode sy 161
    Text: Philips Sem iconductors Product specification General purpose double diode BAV23 PINNING FEATU RES D E S C R IP T IO N • Sm all plastic S M D package The B A V 23 consists of two general purpose diodes fabricated in planar technology, and encapsulated in the


    OCR Scan     		PDF BAV23 diodes sy 360 diode sy 161

    Untitled

    Abstract: No abstract text available
    Text: L 1 0 C 1 1 4/8-bit Variable Length Shift Register FEATURES DESCRIPTION □ Variable Length 4 or 8-bit Wide Shift Register □ Selectable Delay Length from 3 to 18 Stages □ Low Power CMOS Technology □ Replaces TRW /Raytheon TMC2011 □ Load, Shift, and Hold Instructions


    OCR Scan     		PDF TMC2011 MIL-STD-883, 24-pin 28-pin L10C11 L10C11JC25 L10C11JC20

    L-3019

    Abstract: c4630 BUP 303 IGBT
    Text: SIEMENS BUP 306D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type VcE BUP 306D 1200V 23A h Pin 3 C E Package Ordering Code


    OCR Scan     		PDF O-218AB Q67040-A4222-A2 25VGE Jul-30-1996 PT05156 l-30-1996 L-3019 c4630 BUP 303 IGBT

    Untitled

    Abstract: No abstract text available
    Text: L o g u i c o c h 4/8-bit Variable Length Shift Register DEVICES INCORPORATED □ Variable Length 4 or 8-bit Wide Shift Register □ Selectable Delay Length from 3 to 18 Stages □ Low Power CMOS Technology □ Replaces TRW/Raytheon TMC2011 □ Load, Shift, and Hold Instructions


    OCR Scan     		PDF TMC2011 MIL-STD-883, 24-pin 28-pin L10C11 L10C11JC25 L10C11JC20

    Y33DA

    Abstract: No abstract text available
    Text: L10C11 4/8-bit Variable Length Shift Register □ Variable Length 4 or 8-bit Wide Shift Register □ Selectable Delay Length from 3 to 18 Stages □ Low Power CMOS Technology □ Replaces TRW /Raytheon TMC2011 □ Load, Shift, and Hold Instructions □ Separate Data In and Data Out Pins


    OCR Scan     		PDF L10C11 TMC2011 MIL-STD-883, 24-pin 28-pin L10C11 L10C11CM Y33DA

    L21C11JC20

    Abstract: L21C11JC25 L21C11PC20 L21C11PC25 TMC2111 lo520
    Text: D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES □ Variable Length 8-bit Wide Shift Register □ Selectable Delay Length from 1 to 16 Stages □ Low Power CMOS Technology □ Replaces TRW /Raytheon TMC2111 □ Load, Shift, and Hold Instructions □ Separate Data In and Data O ut Pins


    OCR Scan     		PDF L21C11 TMC2111 MIL-STD-883, 24-pin 28-pin 24-pin 28-pin L21C11JC20 L21C11JC25 L21C11PC20 L21C11PC25 TMC2111 lo520

    smd diode L30

    Abstract: l30 diode smd SMD L30
    Text: L 1 0 C 11 4/8-bit Variable Length Shift Register D E V IC E S IN C O R P O R A T E D FEATURES DESCRIPTION □ Variable Length 4 or 8-bit Wide Shift Register □ Selectable Delay Length from 3 to 18 Stages □ Low Power CMOS Technology □ □ □ □ □


    OCR Scan     		PDF L10C11 TMC2011 MIL-STD-883, 24-pin 28-pin L10C11CM25 smd diode L30 l30 diode smd SMD L30