BAS29
Abstract: BAS31 BAS35
Text: Transys Electronics L I M I T E D SOT-23 BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking BAS29– L20 BAS31 – L21
|
Original
|
PDF
|
OT-23
BAS29,
BAS31,
BAS35
BAS29
BAS31
BAS35
BAS29
BAS31
|
Untitled
Abstract: No abstract text available
Text: Preliminary OD-B1222-L21 1.25Gbps OLT Transceiver 2R for PON system FEATURES Applied to OLT(Optical Line Termination) for Single Fiber Bi-directional transmission on PON System. Compliant with ITU-T G.984.2 Class A and IEEE802.3ah 1000BASE-PX10-D applicable
|
Original
|
PDF
|
OD-B1222-L21
25Gbps
IEEE802
1000BASE-PX10-D
SW1-290
EWV-19-0064-P2E
|
Untitled
Abstract: No abstract text available
Text: BAS31 BAS31 Connection Diagram 3 3 3 L21 2 1 1 2 1 2 SOT-23 Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 120 V IF AV Average Rectified Forward Current 200
|
Original
|
PDF
|
BAS31
OT-23
|
33L21
Abstract: BAS31 BAV19 GENERAL PURPOSE DIODE
Text: BAS31 CONNECTION DIAGRAM 3 3 3 L21 2 1 2 1 SOT-23 2 1 High Voltage General Purpose Diode Sourced from Process 1H. See BAV19 / 20 / 21 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage
|
Original
|
PDF
|
BAS31
OT-23
BAV19
33L21
BAS31
GENERAL PURPOSE DIODE
|
BAS31
Abstract: BAV19
Text: BAS31 BAS31 CONNECTION DIAGRAM 3 3 3 L21 2 SOT-23 1 2 1 1 2 High Voltage General Purpose Diode Sourced from Process 1H. See BAV19 / 20 / 21 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage
|
Original
|
PDF
|
BAS31
OT-23
BAV19
BAS31
|
BAS31
Abstract: No abstract text available
Text: BAS31 Discrete POWER & Signal Technologies N BAS31 CONNECTION DIAGRAM 3 3 3 L21 2 1 2 1 SOT-23 2 1 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage
|
Original
|
PDF
|
BAS31
OT-23
BAS31
|
BAY84
Abstract: BAY85S D1850 SDBAX12 bay85 BAS21 A82 d53 MARKING CODE SOT23
Text: SWITCHING DIODES SOT23 PACKAGE Ptot=350mW VR Part No. Marking V BAL99 JF 70 BAR99 JG 70 BAS16 A6 75 BAS19 A8 100 BAS20 A81 150 BAS21 A82 200 BAS29 L20 90 BAS31 L21 90 BAS35 L22 90 BAV70 A4 70 BAV99 A7 70 BAW56 A1 70 BAY84 D49 90 BAY85 D53 240 BAY85S DB6 240
|
Original
|
PDF
|
350mW
BAL99
BAR99
BAS16
BAS19
BAS20
BAS21
BAS29
BAS31
BAS35
BAY84
BAY85S
D1850
SDBAX12
bay85
BAS21 A82
d53 MARKING CODE SOT23
|
l21 diode marking
Abstract: l21 diode marking c2 diode MARKING CODE l22 marking code C2 diode diode MARKING CODE C2 CODE L22 L21 marking code
Text: Central CMPD1001 CMPD1001A CMPD1001S TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high current capability.
|
Original
|
PDF
|
CMPD1001
CMPD1001A
CMPD1001S
OT-23
CMPD1001A
100mA
200mA
l21 diode marking
l21 diode
marking c2 diode
MARKING CODE l22
marking code C2 diode
diode MARKING CODE C2
CODE L22
L21 marking code
|
MARKING CODE l22
Abstract: l21 code diode marking r5 l21 diode l21 diode marking CODE L22 diode marking ja CMPD1001 Marking code TM SOT23-6 CMPD1001S
Text: Central CMPD1001 CMPD1001A CMPD1001S TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for
|
Original
|
PDF
|
CMPD1001
CMPD1001A
CMPD1001S
CMPD1001
OT-23
MARKING CODE l22
l21 code
diode marking r5
l21 diode
l21 diode marking
CODE L22
diode marking ja
Marking code TM SOT23-6
CMPD1001S
|
L21 marking code
Abstract: No abstract text available
Text: CMPD1001 CMPD1001A CMPD1001S SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications
|
Original
|
PDF
|
CMPD1001
CMPD1001A
CMPD1001S
CMPD1001
OT-23
100mA
200mA
L21 marking code
|
l21 diode
Abstract: l21 diode marking MARKING CODE l22 marking code 35 CODE L22 marking code diode CMPD1001 CMPD1001A CMPD1001S marking code
Text: CMPD1001 CMPD1001A CMPD1001S SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications
|
Original
|
PDF
|
CMPD1001
CMPD1001A
CMPD1001S
CMPD1001
OT-23
100mA
200mA
l21 diode
l21 diode marking
MARKING CODE l22
marking code 35
CODE L22
marking code diode
CMPD1001A
CMPD1001S
marking code
|
L21 marking code
Abstract: CMPD1001S CMPD1001 CMPD1001A marking c2 diode
Text: Central CMPD1001 CMPD1001A CMPD1001S TM Semiconductor Corp. HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring
|
Original
|
PDF
|
CMPD1001
CMPD1001A
CMPD1001S
CMPD1001
OT-23
150oC
100mA
L21 marking code
CMPD1001S
CMPD1001A
marking c2 diode
|
Untitled
Abstract: No abstract text available
Text: BAS29, BAS31, BAS35 Il SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAS2&- L20 BAS31 - L21 BAS35 - L22 _3.0_ 2.8 0.46 w -H
|
OCR Scan
|
PDF
|
BAS29,
BAS31,
BAS35
BAS29
BAS31
BAS35
BAS31
|
Untitled
Abstract: No abstract text available
Text: 83633^4 DDDD718 7b4 • BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAS29- L20 BAS31 - L21 BAS35 - L22
|
OCR Scan
|
PDF
|
DDDD718
BAS29,
BAS31,
BAS35
BAS29
BAS31
BAS35
BAS29-
|
|
Untitled
Abstract: No abstract text available
Text: BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BÀS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAS29- L20 BAS31 - L21 BAS35 L22 J.O 2.8 0.46 H — H i
|
OCR Scan
|
PDF
|
BAS29,
BAS31,
BAS35
BAS29
BAS31
BAS29-
BAS35
BAS29
|
BAS29
Abstract: BAS31 BAS35 diode 7B4
Text: • E3A33T4 DDDG716 7b4 ■ BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm B A S 2 9 - L20 BAS31 - L21
|
OCR Scan
|
PDF
|
D00G716
BAS29,
BAS31,
BAS35
BAS29
BAS31
BAS35
BAS29-
diode 7B4
|
BAS31
Abstract: BAV19 259-C
Text: BAS31 e? Diserete POWER & Sign al Technologies National Semiconductor“ BAS31 CONNECTION DIAGRAM JH L21 TD— ET SOT-23 High Voltage General Purpose Diode Sourced 'from P rocess 1H. S e e B A V 1 9 / 2 0 / 2 1 for characteristics. Absolute Maximum Ratings*
|
OCR Scan
|
PDF
|
OT-23
BAS31
BAV19
bS01130
BAS31
259-C
|
philips twin eye
Abstract: SOT242 diiode philips "twin eye" laser diode philips
Text: Philips Components D E V E L O P M E N T DATA CQL21/D This data sheet contains advance information and specifications which are subject to change without notice. SMALL SIZE DOUBLE HETEROSTRUCTURE AIGaAs LASER G E N E R A L D E S C R IP T IO N The C Q L21/D is designed for reading applications such as video/audio disc applications, optical
|
OCR Scan
|
PDF
|
CQL21/D
CQL21/D
L21/D
100mW
philips twin eye
SOT242
diiode
philips "twin eye"
laser diode philips
|
MARKING SY SOT23
Abstract: marking JG SOT-23 L21 marking code marking code LE SOT 23 jg sot23 Diode SY 350
Text: Central" CMPD1001 CMPD1001A CMPD1001S Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high current capability. HIGH CURRENT
|
OCR Scan
|
PDF
|
CMPD1001
CMPD1001A
CMPD1001S
OT-23
CMPD1001A
100ii
13-November
MARKING SY SOT23
marking JG SOT-23
L21 marking code
marking code LE SOT 23
jg sot23
Diode SY 350
|
marking code fs 1 sot 323
Abstract: R5 MARKING CODE diode l22
Text: Central“ CMPD1001 CMPD1001A CMPD1001S Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON SWITCHING DIODE DESCRIPTION: The Central Semiconductor CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for
|
OCR Scan
|
PDF
|
CMPD1001
CMPD1001A
CMPD1001S
OT-23
CMPD1001S
OPD1001S
marking code fs 1 sot 323
R5 MARKING CODE
diode l22
|
smd diode marking A7 SOT-23
Abstract: SMD DIODE A6 t SOT-23 5d smd sot-23 L21 SMD marking codes sot-23 A4 A7 w sot-23 diode SOT89 smd marking A5 sod a4 marking smd diode SOT23 A6 smd diode marking A3 sot23
Text: SMD SWITCHING DIODES DESCRIPTION • Philips Components diodes for switching applications combine the highest quality standards w ith state-of-the-art production equipm ent to fulfill the need for generic, low-cost devices. These sw itching diodes offer a broad
|
OCR Scan
|
PDF
|
OT-23
OT-143
PMLL4151
PMLL4153
PMLL4446
PMLL4448
OT-223
OT-143
smd diode marking A7 SOT-23
SMD DIODE A6 t SOT-23
5d smd sot-23
L21 SMD
marking codes sot-23 A4
A7 w sot-23
diode SOT89 smd marking A5
sod a4 marking smd diode
SOT23 A6
smd diode marking A3 sot23
|
Untitled
Abstract: No abstract text available
Text: Central" CMPD1001 CMPD1001A CMPD1001S Semiconductor Corp. HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring
|
OCR Scan
|
PDF
|
CMPD1001
CMPD1001A
CMPD1001S
CMPD1001
OT-23
|
y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
|
OCR Scan
|
PDF
|
500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
|
YP diode code marking
Abstract: l21 diode marking L21 marking code
Text: Central CMPD1001 CMPD1001A CMPD1001S Semiconductor Corp. HIGH CURRENT SWITCHING DIODE DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring
|
OCR Scan
|
PDF
|
CMPD1001
CMPD1001A
CMPD1001S
OT-23
CMPD1001S
100mA
200mA
YP diode code marking
l21 diode marking
L21 marking code
|