trimmer 3296
Abstract: 1m trimpot trimmer cw 3296 trimmer 3296 code Bourns 3296 202 3296 potentiometer 100k trimmer 3386 cw Bourns 3296
Text: *R oH V SC AV ER OM AI SIO PL LA N IA BL S NT E Features Model 3296-OT1 is obsolete and not recommended for new designs. • 3/8 ” Square/ Multiturn / Cermet Industrial / Sealed ■ Designed for operational amplifier offset voltage adjustment applications
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3296-OT1
3386-OT1.
2002/95/EC
trimmer 3296
1m trimpot
trimmer cw 3296
trimmer 3296 code
Bourns 3296 202
3296 potentiometer 100k
trimmer 3386 cw
Bourns 3296
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Johanson Piston Trimmer
Abstract: J154 J329 J253 vk200 erie redcap capacitors MRF327 NPN RF Amplifier
Text: Order this document by MRF327/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc
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MRF327/D
MRF327
Johanson Piston Trimmer
J154
J329
J253
vk200
erie redcap capacitors
MRF327
NPN RF Amplifier
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GF116
Abstract: WPS2900
Text: 2901 1 Cell Siren Mass Notification Warning System Whelen's All-Hazard WPS2900 series omnidirectional high-power voice and siren systems deliver clear, powerful voice and siren communication. System Features • WPS2901 - One Omni-Directional Speaker Cell Assembled in a Vertical Column
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WPS2900
WPS2901
109dBc
-10dB
GF11694B
GF116
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Untitled
Abstract: No abstract text available
Text: T1G6000528-Q3 7W, 28V, 20MHz-6GHz, GaN RF Power Transistor Applications • Wideband and narrowband defense and commercial communication systems –– General Purpose RF Power –– Jammers –– Radar –– Professional radio systems –– WiMAX –– Wideband amplifiers
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T1G6000528-Q3
20MHz-6GHz,
T1G6000528-Q3
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CMC 707 schematic diagram
Abstract: HELA-10B HELA-10 600w class d circuit diagram schematics 08055C103KAT2A HELA-10A HELA-10C HELA-10D 10 watt power amplifier chassis schematic diagram an-60-009
Text: AN-60-009 EA-7193 Application Note on HELA-10: HIGH IP3, WIDE BAND, LINEAR POWER AMPLIFIER Mini-Circuits Engineering Department P.O. Box 350166 Brooklyn, NY 11235 AN-60-009 Rev.: D M118643 07/23/08 File name: AN60009.doc This document and its contents are the property of Mini-Circuits
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AN-60-009
EA-7193
HELA-10:
AN-60-009
M118643
AN60009
HELA-10,
HELA-10
CMC 707 schematic diagram
HELA-10B
600w class d circuit diagram schematics
08055C103KAT2A
HELA-10A
HELA-10C
HELA-10D
10 watt power amplifier chassis schematic diagram
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M 9587
Abstract: FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210
Text: RF AND IF QUARTER 1, 2004 SG1009/D REV 0 WWW.MOTOROLA.COM/SEMICONDUCTORS What’s New! Market Product TV Broadcast MRF377 800 MHz 2.2 GHz Cellular Base Station MW4IC001MR4 900 MHz Cellular Base Station MRF9210, MHVIC915R2, MWIC930R1, MWIC930GR1 GSM/GSM EDGE/TDMA 1.8 GHz Cellular Base Station
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SG1009/D
MRF377
MW4IC001MR4
MRF9210,
MHVIC915R2,
MWIC930R1,
MWIC930GR1
MHVIC1905R2,
MW4IC2020MBR1,
MW4IC2020GMBR1,
M 9587
FS Oncore
MG4100
LDMOS PA Driver IC, Motorola
FS Oncore GPS
motorola GPS receiver module fs oncore
Motorola transistors MRF646
semiconductors cross index
transistor m 9587
MRF9210
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linear amplifier 470-860
Abstract: PM3260 BLW34 HP8620C HP86222A an blw32 33 RESISTOR pr37 PR37 RESISTOR HP8558B enamelled copper wire tables
Text: APPLICATION NOTE A wide-band linear power amplifier 470 − 860 MHz with two transistors BLW34 ECO7901 Philips Semiconductors A wide-band linear power amplifier (470 − 860 MHz) with two transistors BLW34 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 THEORETICAL CONSIDERATIONS
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BLW34
ECO7901
SCA57
linear amplifier 470-860
PM3260
BLW34
HP8620C
HP86222A
an blw32 33
RESISTOR pr37
PR37 RESISTOR
HP8558B
enamelled copper wire tables
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Untitled
Abstract: No abstract text available
Text: MGA-83563 +22 dBm PSAT 3V Power Amplifier for 0.5 – 6 GHz Applications Data Sheet Description Features Avago’s MGA-83563 is an easy-to-use GaAs RFIC amplifier that offers excellent power output and efficiency. This part is targeted for 3V applications where constant-envelope modulation is used. The output of the amplifier is
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MGA-83563
MGA-83563
5989-4188EN
AV02-1986EN
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TBQ-3018
Abstract: ku vsat amplifier
Text: Product Information ISO 9001 CERTIFIED TBQ-3018 14.0 to 14.5 GHz GaAs MMIC Power Amplifier for VSA T Applications VSAT F e a t u rre es ♦ ♦ ♦ ♦ +30 dBm Output Power at 1 dB Gain Compression 35 dB typical Small Signal Gain 7 dB typical Noise Figure
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TBQ-3018
TBQ-3018
ku vsat amplifier
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SIT Static Induction Transistor
Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are
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AN1529/D
AN1529
AN1529/D*
SIT Static Induction Transistor
create uhf vhf tv matching transformer
AR165S
Granberg
AR-165S
power bjt advantages and disadvantages
all mosfet vhf power amplifier narrow band
rf POWER BJTs
mrf154 amplifier
bjt ce amplifier
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ACRIAN
Abstract: acrian inc
Text: 0182998 ACRIAN INC T7 ACRIAN INC rJm UStk Krai JS l M l ¡2 S I H m P ! S r . n i L h Wj¡¡¡ h >« Ü m&Z I 12 WATT - 28 VOLT 100-500 MHz The 0105-12 is a 12 watt balanced transistor designed for broadband use in the 100-500 M Hz frequency band. It may be operated in Class A, AB or C. Gold
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33-OJ
GDG1E17
ACRIAN
acrian inc
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Untitled
Abstract: No abstract text available
Text: w h ew lett WLish 'KMPA CK A RD General Purpose: Narrowband Power Amplifier and C A R S Band Preamplifiers Features AWP Series 3.7 to 11.7 GHz. • High Reliability • Energy Efficiency • FC C Type Accepted • High Channel Loading Capacity • Easy to Install
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AWP-64107
AWP-71107
AWP-77107
AWP-83107
P-117107
AWP-117109
AWP-132200
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Untitled
Abstract: No abstract text available
Text: Whnl H E W L E T T mUnM P a c k a r d Avantek Products High Efficiency, Class A, 1 Watt Amplifier 10 to 500 MHz Technical Data CTO-565 Features Description • 1 Watt Output Power • Low Current: 450 mA The CTO-565 is a high gain, high efficiency, Class A 1 Watt ampli
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CTO-565
CTO-565
44475A4
G01Q7b4
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC908 NPN E P IT A X IA L PLAN AR T Y P E DESCRIPTION OUTLINE DRAWING 2SC908 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on UHF band mobile radio applications. Dimensions in mm
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2SC908
2SC908
500MHz
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2SC908
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC908 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC908 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power amplifiers on UHF band mobile radio applications. Dimensions in mm
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2SC908
2SC908
500MHz
500MHz
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transistor SL-100
Abstract: sl-100 TRANSISTOR
Text: Whn% H E W L E T T mLfim P A C K A R D Avantek Products High Efficiency, Class A, 1 Watt Amplifier 10 to 500 MHz Technical Data 1 CTO-565 Features Description Pin Configuration • 1 W att Output Pow er The CTO-565 is a high gain, high efficiency , Class A 1 Walt ampli
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CTO-565
CTO-565
transistor SL-100
sl-100 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2S C 2131 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC2131 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in UHF band mobile radio applications. Dimensions in mm FEATURES •
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2SC2131
500MHz
150MHz
150MHz
450MHz)
100pF,
01/iF,
200/iF
01/iF
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Untitled
Abstract: No abstract text available
Text: What H E W L E T T * mLliM PACKARD +22 dBm Psat 3 V Power Amplifier for 0.5 - 6 GHz Applications Technical Data MGA-83563 Features • +22 dBm Psat at 2.4 GHz, 3.0V Surface Mount Package SOT-363 SC-70 +23 dBm Psat at 2.4 GHz, 3.6V • 22 dB Small Signal Gain at
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MGA-83563
OT-363
SC-70)
MGA-83563
OT-363/SC-70)
MGA-83563-TR1
MGA-83563-BLK
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transistor c3-12
Abstract: acrian RF POWER TRANSISTOR C3-12 C3-12-2 C312
Text: 0182998 ACRIAN INC ~T? j>F| 0 1 0 2 ^ 0 0DG13ai a ^ 3 ^ ö7 C3-12 GENERAL DESCRIPTION The C3-12 is a common emitter RF power transistor designed to provide 4 watts of power from a 12.5 volt supply across the 450-512 MHz band. 4 WATT - 12.5 VOLTS 450-512 MHz
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C3-12
lc-50mA
100mA
Vcc-12
transistor c3-12
acrian RF POWER TRANSISTOR
C3-12-2
C312
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N15W
Abstract: acrian 0510-50 ACRIAN 0510-50 acrian inc
Text: 0182998 ACRIAN INC T7 ACRIAN INC DE I OlöSTTfi — GENERAL T - 3 'I - DGD1E33 S m m 0510-10 DESCRIPTION 10 WATTS - 28 VOLTS 500-1ÖÖÖ? MHz The 0510-10 is a common emitter silicon power transistor providing 10 watts of CW power across a 500-1000 frequency band. Gold metallization
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DGD1E33
Tc-25
T-33-0?
N15W
acrian 0510-50
ACRIAN
0510-50
acrian inc
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Untitled
Abstract: No abstract text available
Text: * * * * LOW NOISE M E D I U M POWER WIDE BAWD M R I BAWDS CELLULAR / PCM BAWDS IN M A R S A T BANDS y v iiT E INSERT LATEST BIPOLAR AMPLIFIER UPDATE To verify status of your Product Update, please contact Bill Pope at 516 436-7400, ext. 282 This catalog, in conjunction with our latest Bipolar
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2N3903
Abstract: 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device b v CEO Type @ 1 0 m A - V Min. V CE(sat) E M ax. @ l c (m A) V c e (V) 10 10 Max. @ lc (m A ) •BaBB B B i» « ¡■ M l ■ M M ■ ■ ■ I 300 350 250 300 300 25 ?.5 2.5
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2N3903
2N3904
2N3905
2N3906
2N4123
2N4124
2N4125
2N4126
2N4400
2N4401
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2n3904 409
Abstract: 2N4125 2N4126 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4400
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150
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2N3903
2N3904
2N3905
2N3906
2N4123
2N4124
2N4125
2N4126
2N4400
2N4I26
2n3904 409
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Untitled
Abstract: No abstract text available
Text: HEW LETT PACKARD 38 GHz LNA Technical Data HMMC-5038 Features • Low N oise Figure: 4.8 dB • Frequency Range: 37 - 40 GHz • High Gain Adjustable : 3 V, 120 mA@ 23 dB Gain 3 V, 80 mA @ 20 dB Gain • 50 D. Input/Output Matching Description The HMMC-5038 MMIC is a highgain low-noise amplifier (LNA)
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HMMC-5038
HMMC-5038
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