MH-34B4B
Abstract: circuit diagram of smart home alarm system 108 to 174 mhz radio receiver 1750 Hz TONE Encoder MH-37A4B CTCSS Encoder/Decoder with Voice Signal Circuit CTCSS Encoder/Decoder how to build vhf tv transmitter block diagram of ct scanner cpu 222 DC/DC/DC
Text: VHF/UHF ULTRA-COMPACT DUAL-BAND TRANSCEIVER WITH WIDE BAND COVERAGE OPERATING MANUAL VERTEX STANDARD CO., LTD. 4-8-8 Nakameguro, Meguro-Ku, Tokyo 153-8644, Japan VERTEX STANDARD US Headquarters 10900 Walker Street, Cypress, CA 90630, U.S.A. International Division
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0304G-0E
MH-34B4B
circuit diagram of smart home alarm system
108 to 174 mhz radio receiver
1750 Hz TONE Encoder
MH-37A4B
CTCSS Encoder/Decoder with Voice Signal Circuit
CTCSS Encoder/Decoder
how to build vhf tv transmitter
block diagram of ct scanner
cpu 222 DC/DC/DC
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NE42484C
Abstract: 2608 surface mount transistor NE42484C-T1 Ga FET marking k C band FET transistor s-parameters L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking C 1S1220 THE TRANSISTOR MANUAL (JAPANESE) 1993 nec gaas fet marking
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent
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NE42484C
NE42484C
NE42484C-SL
2608 surface mount transistor
NE42484C-T1
Ga FET marking k
C band FET transistor s-parameters
L to Ku BAND LOW NOISE AMPLIFIER
NEC Ga FET marking C
1S1220
THE TRANSISTOR MANUAL (JAPANESE) 1993
nec gaas fet marking
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fujitsu gaas fet
Abstract: FLM1011-3F
Text: FLM1011-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω
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FLM1011-3F
-46dBc
FLM1011-3F
fujitsu gaas fet
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Untitled
Abstract: No abstract text available
Text: FLM1011-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω
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FLM1011-3F
-46dBc
FLM1011-3F
FCSI0599M200
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FLM1011-3F
Abstract: No abstract text available
Text: FLM1011-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω
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FLM1011-3F
-46dBc
FLM1011-3F
FCSI0599M200
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Untitled
Abstract: No abstract text available
Text: FLM1011-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: hadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50W
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FLM1011-3F
-46dBc
FLM1011-3F
FCSI0599M200
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FLM1011-3F
Abstract: No abstract text available
Text: FLM1011-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 35.0dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω
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FLM1011-3F
-46dBc
FLM1011-3F
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Untitled
Abstract: No abstract text available
Text: FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general
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FLK017WF
FLK017WF
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16GHZ
Abstract: FLK017WF
Text: FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general
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FLK017WF
FLK017WF
16GHZ
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Untitled
Abstract: No abstract text available
Text: FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general
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FLK017WF
FLK017WF
FCSI0598M200
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FLK017WF
Abstract: No abstract text available
Text: FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general
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FLK017WF
FLK017WF
FCSI0598M200
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Band Power GaAs FET
Abstract: Flk017wf ku 606 ku 201
Text: FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general
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FLK017WF
FLK017WF
Band Power GaAs FET
ku 606
ku 201
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Untitled
Abstract: No abstract text available
Text: FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general
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FLK017WF
FLK017WF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY INFORMATION L9D3256M32DBG2 L9D3512M32DBG2 16-32 Gb, DDR3, 256-512M x 32 Dual Channel Memory Module Benefits FEATURES DDR3 Integrated Module [iMOD]: "‚"XDD?XDDS?3057X"/202897X1-203X ‚"3057X"egpvgt/vgtokpcvgf."rwuj1rwnn" K1Q " ‚"Rcemcig<"38oo"z"44oo"z"304oo."
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L9D3256M32DBG2
L9D3512M32DBG2
256-512M
3057X
/202897X1-203X
304oo.
493dcnnu
3022oo
LDS-L9D3xxxM32DBG2
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Thomson-CSF THYRISTOR tk 1204
Abstract: TK1204 TK 1204 M KU 601 Thyristor 1504 Thyristor 606 tk 100 A Thomson-CSF THYRISTOR BTW50-600 GO601
Text: three phase half-controlled metal stacks ponts triphasés mixtes métalliques Vr = Types VRRM m 80 A 400 600 1000 400 600 1000 / 400 600 1000 / / / RG 604 RG 606 RG 610 6xP80 6160 110 220 380 TK 1204 TK 1206 TK 1210 KU 1004 KU 1006 KU 1010 6xP80 6160 110 220
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6xP80
6xP150
Ta601
6xTNF150
6xP150
6xR150
Thomson-CSF THYRISTOR tk 1204
TK1204
TK 1204 M
KU 601
Thyristor 1504
Thyristor 606
tk 100 A
Thomson-CSF THYRISTOR
BTW50-600
GO601
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FLK017WF
Abstract: fujitsu gaas fet
Text: FLK017WF - X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P-|<jB = 20.5dBm Typ. High Gain: G-j^B = 7.5dB(Typ.) High PAE: r iadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package
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FLK017WF
FLK017WF
FCSI0598M200
fujitsu gaas fet
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NE42484C
Abstract: transistor NEC D 586 NEC Ga FET marking L NE42484C-T1 28609 low noise FET NEC U ne42484 nec gaas fet marking NEC 2533 NEC Ga FET
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent
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NE42484C
NE42484C
42484C
E42484C-SL
NE42484C-T1
transistor NEC D 586
NEC Ga FET marking L
NE42484C-T1
28609
low noise FET NEC U
ne42484
nec gaas fet marking
NEC 2533
NEC Ga FET
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ku 606
Abstract: RG604 1506 400-110 RG606 C1000 ku 611 KU 608 C-400
Text: 1\ three phase métal stocks ponts triphasés métalliques Type* 70 A / / / Tam b / / GD 611 676 C GF 611 676 (C) GJ 611 676 (C) H eatsink Convecteur M ech anical code Code mécanique 110 220 380 RG 604 RG 606 RG 610 6xCB80 546 400 600 1000 110 220 380 KU 1504
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6xCB80
6xP150
6xTNF150
ku 606
RG604
1506
400-110
RG606
C1000
ku 611
KU 608
C-400
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FLM1011-3F
Abstract: fujitsu gaas fet
Text: FLM1011-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 35.0dBm Typ. High Gain: G ^ b = 7.5dB (Typ.) High PAE: riadd = 29% (Typ.) Low IM3 = -46dBc@Po = 24.0dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Q
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FLM1011-3F
-46dBc
FLM1011-3F
FCSI0599M200
fujitsu gaas fet
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Untitled
Abstract: No abstract text available
Text: 0017072 MITSUBISHI SEMICONDUCTOR <GaAs FET> 1S7 MGF1923 TAPE CARRIER SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters linches The M G F 1 9 2 3 , low noise GaAs FET with an N-channel 4 .0 ± 0 .2 Schottky gate, is designed for use in S to Ku band ampli
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MGF1923
13dBm
12GHz
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Diodes de redressement
Abstract: BAY21 BAY18 BOITIER MU86 f 1010 fr 608 TF80 650C RG606 fr 1004 diodes
Text: DIODES DE REDRESSEMENT RAPIDE fast recovery rectifier diodes VRWM 'FSM VF @ •f r m 10 ms •f m A (A) (V) vrmm TYPES 60 A / 'F (A) tease = 75°C •R G 6 0 2 F -R G 6 0 2 *RG 604 F - RG 604 •RG 606 F - RG 606 *RG 608 F - RG 608 *RG 610 F - RG 610 100 A
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ku 606
Abstract: SV2004
Text: rectifier diodes > 100 A diodes de re d re ssem en t^ 100 A Types •o Vr r m ■f s m 10 m s Vf A (V) (A ) <V) THOMSON-CSF / If Ir m ax ' Case Ti max 100 A / Tease = 140°C SV SV SV SV SV SV 1016 1018 1020 1022 1024 1025 R R R R R R 1002, 1004, 1006, 1008,
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6xCB80
6xP150
6xTNF150
ku 606
SV2004
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DIODE REDRESSEMENT 4040
Abstract: RP 8040 X diode RP 4040 la 8040 G 402 rp 402 rp KU 612 RP8040 DRA402 LA 4040
Text: rectifier diodes < 100 A diodes de redressement Types < 100 A T H O M S O N -C S F •o V r MVI I f SM 10 m s vF A (V) (A ) (V) / if max 20 A / T c a s e = 1 5 0 °C 1N 248 B, (R) 1N 249 B ,(R ) 1N 250 B, (R) 1N 1195 A, (R) 1N 1196 A, (R) 1N 1197 A, (R)
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1000A2
2500A2
TNF300
DIODE REDRESSEMENT 4040
RP 8040 X
diode RP 4040
la 8040
G 402 rp
402 rp
KU 612
RP8040
DRA402
LA 4040
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KU 612
Abstract: BTW 600 btw 50 200 ts 435 ku 606 KU 608 RP6020 BTW50-1200 TK1804 RG612
Text: new standard single phase half-controlled metal stacks q nouveaux ponts standards métalliques monophasés mixtes A verage o u tp u t cu rra n t C o u ra n t m oyen de s o rtie Type Tamb BDT BDT BDT BDT BDT BDT 15 200 15 400 15 600 15 800 15 1000 15 1200 C
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TNF250
KU 612
BTW 600
btw 50 200
ts 435
ku 606
KU 608
RP6020
BTW50-1200
TK1804
RG612
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