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    KSE800 TRANSISTOR Search Results

    KSE800 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    KSE800 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor


    Original     		PDF KSE800/801/802/803 KSE700/701/702/703 O-126 KSE800/801 KSE802/803

    transistor H 802

    Abstract: No abstract text available
    Text: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor


    Original     		PDF KSE800/801/802/803 KSE700/701/702/703 O-126 KSE800/801 KSE802/803 KSE802/803 transistor H 802

    E802

    Abstract: KSE800
    Text: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor


    Original     		PDF KSE800/801/802/803 KSE700/701/702/703 O-126 KSE800/801 KSE802/803 E802 KSE800

    transistor k 702

    Abstract: TRANSISTOR S 802 kse800
    Text: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor


    Original     		PDF KSE800/801/802/803 KSE700/701/702/703 O-126 KSE800/801 KSE802/803 KSE802/803 KSE800 KSE800S transistor k 702 TRANSISTOR S 802

    ic 803

    Abstract: KSE800
    Text: KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 TO-126 1 1 . Emitter 2. Collector 3. Base NPN Epitaxial Silicon Darlington Transistor


    Original     		PDF KSE800/801/802/803 KSE700/701/702/703 O-126 KSE800/801 KSE802/803 KSE802/803 ic 803 KSE800

    ic 803

    Abstract: transistor 2A 3v kse800 KSE800 Transistor darlington transistor with built-in temperature c kse70 pc 801 transistor 803
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSE800/801/803 HIGH DC CURRENT GAIN MIN hFE= 750 IC= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS { TO-126 Complement to KSE700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic


    Original     		PDF KSE800/801/803 O-126 KSE700/701/702/703 KSE800/801 KSE802/803 KSE800/802 KSE801/803 ic 803 transistor 2A 3v kse800 KSE800 Transistor darlington transistor with built-in temperature c kse70 pc 801 transistor 803

    702 TRANSISTOR

    Abstract: kse800
    Text: KSE800/801/803 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @IC= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complement to KSE700/701/702/703 ABSOLUTE MAXIMUM RATINGS Characteristic


    Original     		PDF KSE800/801/803 O-126 KSE700/701/702/703 KSE800/801 KSE802/803 702 TRANSISTOR kse800

    ic 701

    Abstract: No abstract text available
    Text: PNP EPITAXIAL KSE700/701/702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @IC= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complement to KSE800/801/802/803 ABSOLUTE MAXIMUM RATINGS Characteristic


    Original     		PDF KSE700/701/702/703 KSE800/801/802/803 O-126 KSE700/701 KSE702/703 ic 701

    Untitled

    Abstract: No abstract text available
    Text: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor


    Original     		PDF KSE700/701/702/703 KSE800/801/802/803 O-126 KSE700/701 KSE702/703

    702 P TRANSISTOR

    Abstract: 702 TRANSISTOR ic 701 E702 TRansistor 701 ic 701 fairchild 702 pnp fairchild 703
    Text: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor


    Original     		PDF KSE700/701/702/703 KSE800/801/802/803 O-126 KSE700/701 KSE702/703 702 P TRANSISTOR 702 TRANSISTOR ic 701 E702 TRansistor 701 ic 701 fairchild 702 pnp fairchild 703

    702 TRANSISTOR

    Abstract: 702 pnp
    Text: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor


    Original     		PDF KSE700/701/702/703 KSE800/801/802/803 O-126 KSE700/701 KSE702/703 702 TRANSISTOR 702 pnp

    702 y TRANSISTOR

    Abstract: 702 Z TRANSISTOR transistor marking 702 application marking 702 FAIRCHILD ic 701
    Text: KSE700/701/702/703 KSE700/701/702/703 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 Min. @ IC= -1.5 and -2.0A DC • Complement to KSE800/801/802/803 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Darlington Transistor


    Original     		PDF KSE700/701/702/703 KSE800/801/802/803 O-126 KSE700/701 KSE702/703 KSE703 KSE703S 702 y TRANSISTOR 702 Z TRANSISTOR transistor marking 702 application marking 702 FAIRCHILD ic 701

    transistors mje13005

    Abstract: MJE4340 MJE4341 MJE4342 MJE4343 MJH6282 MJH6283 MJH6284 TIP35 TIP35A
    Text: Power Transistors Operating Temperature: -65o C to 150o C h FE Part No. and Polarity IC NPN MJE4340 MJE4341 MJE4342 MJE4343 MJH6282 MJH6283 MJH6284 TIP35 TIP35A TIP35B TIP35C - PNP MJE4350 MJE4351 MJE4352 MJE4353 MJH6285 MJH6286 MJH6287 TIP36 TIP36A TIP36B


    Original     		PDF MJE4350 MJE4351 MJE4352 MJE4353 MJH6285 MJH6286 MJH6287 TIP36 TIP36A TIP36B transistors mje13005 MJE4340 MJE4341 MJE4342 MJE4343 MJH6282 MJH6283 MJH6284 TIP35 TIP35A

    fjaf6812

    Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
    Text: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320


    Original     		PDF O-126 KSC2682 KSC3502 KSC2258 KSC2258A KSC3503 KSC3953 KSC2688 BD150 KSC5305D fjaf6812 tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920

    transistor H 802

    Abstract: PC 801 S
    Text: NPN EPITAXIAL KSE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @ lc= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BAS E-EMITTER RESISTORS * Complement to KSE700/701/702/703 ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol


    OCR Scan     		PDF KSE800/801/803 KSE700/701/702/703 KSE800/801 KSE802/803 transistor H 802 PC 801 S

    702 y TRANSISTOR

    Abstract: KSE800
    Text: PNP EPITAXIAL KSE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BAS E-EMITTER RESISTORS * Complement to KSE800/801/802/803 ABSOLUTE MAXIMUM RATINGS C haracteristic


    OCR Scan     		PDF KSE700/701 KSE800/801/802/803 KSE700/701 KSE702/703 702 y TRANSISTOR KSE800

    702 TRANSISTOR

    Abstract: transistor 702 TRansistor 701 ic 701 702 Z TRANSISTOR ir 701 702 pnp kse800 q 702 TRansistor L 701
    Text: PNP EPITAXIAL KSE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to KSE800/801/802/803 ABSOLUTE MAXIMUM RATINGS Characteristic


    OCR Scan     		PDF KSE700/701 KSE800/801/802/803 O-126 KSE702/703 702 TRANSISTOR transistor 702 TRansistor 701 ic 701 702 Z TRANSISTOR ir 701 702 pnp kse800 q 702 TRansistor L 701

    kse800

    Abstract: 702 TRANSISTOR 702 Z TRANSISTOR TRansistor L 701
    Text: NPN EPITAXIAL KSE800/801/803 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @lc= 1.5 and 2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to KSE700/701/702/703 ABSOLUTE MAXIMUM RATINGS C haracteristic


    OCR Scan     		PDF E800/801/803 KSE700/701/702/703 O-126 KSE800/801 KSE802/803 kse800 702 TRANSISTOR 702 Z TRANSISTOR TRansistor L 701

    TRANSISTOR S 802

    Abstract: KSE800 ic 801
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KS E800/801/803 HIGH DC CU R R EN T GAIN MIN hFE= 750 @ lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EM ITTER RESISTORS Complement to KSE700/701/702/703 A B S O LU T E MAXIMUM RATINGS Characteristic


    OCR Scan     		PDF E800/801/803 KSE700/701/702/703 KSE800/801 KSE802/803 KSE800/801/803 TRANSISTOR S 802 KSE800 ic 801

    Untitled

    Abstract: No abstract text available
    Text: FUNCTION GUIDE TRANSISTORS 2.1.6 T0-220 F Type Transistors Device Type (A) (V) 1.5 150 3 55 NPN KSC3296 Condition Condition hFE •e V ce (V) (A) M IN KSA1304 10 0.5 40 KSA1614 5 0.5 40 240 PNP M AX lc (A) Ib (A) 75 0.5 0.05 VciKsatKV) TYP Condition M AX


    OCR Scan     		PDF T0-220 KSC3296 KSD1406 KSD2012 KSD1273 KSD1944 KSD1408 KSD1362 KSD1588 KSC3158

    KSD201

    Abstract: kse800 KS01692 KSE703 KSA1304 KSA1614 KSB1015 KSB1366 KSC3296 KSD1273
    Text: SAMSUNG E L E C T R O N I C S INC bOE D • 7 cíbmM5 TRANSISTORS 2.1.6 0011S3M 67b ■ SMfiK FUNCTION GUIDE T0-220 F Type Transistors Device Type VcEO (A) <V) 1.5 150 3 55 NPN KSC3296 W MIN KSA1304 10 0.5 40 KSA1614 5 0.5 40 PNP Condition *>FE VcE<s«tXV)


    OCR Scan     		PDF T0-220 KSC3296 KSA1304 KSA1614 KSD1406 KSB1015 KSD2012 KSB1366 KSD1273 KSD1944 KSD201 kse800 KS01692 KSE703 KSD1273

    BD53A

    Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
    Text: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment “i Package Application FM AM D iff. Amp RM AM P M ix Conv Local Ose IF SOT-23 KSC2223 KSC2223 KSC2223 KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715 10W 20W KSA812/KSC1623


    OCR Scan     		PDF OT-23 KSC2223 KSC2715 KSC1623 KSC2715 KSC1674 BD53A KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10

    ksd 250v 10a

    Abstract: B0X34C ksd 202 ksa 3.3 KSC1330 IR 733 sa992 uhf fm 1845 IF 508AF KSA733
    Text: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package Application SOT-23 TO-92 FM RM AMP M ix Conv Local O se IF KSC 2223 KSC 2223 KSC 2223 KSC 2715 KSC 1674 KSC 1674 KSC1674/KSC1675 KSC838/KSC1676 AM RF Conv O se KSC1623


    OCR Scan     		PDF OT-23 KSC1623 812/KSC SA812/KSC KSA812/KSC1623 KSC1674/KSC1675 KSC838/KSC1676 KSC945/KSC815 ksd 250v 10a B0X34C ksd 202 ksa 3.3 KSC1330 IR 733 sa992 uhf fm 1845 IF 508AF KSA733

    transistor 13003 AD

    Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
    Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)


    OCR Scan     		PDF OT-23 KST06 KST05 KSC1623 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71G transistor 13003 AD ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v