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    KSD363 Price and Stock

    onsemi KSD363RTU

    TRANS NPN 120V 6A TO220-3
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    DigiKey KSD363RTU Tube 704 1
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    Avnet Americas KSD363RTU Tube 18 Weeks 3,000
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    Mouser Electronics KSD363RTU
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    Newark KSD363RTU Bulk 1,000
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    Onlinecomponents.com KSD363RTU
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    Bristol Electronics KSD363RTU 21,000
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    Quest Components KSD363RTU 16,800
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    Rochester Electronics KSD363RTU 177 1
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    TME KSD363RTU 1
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    Avnet Silica KSD363RTU 19 Weeks 50
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    Rochester Electronics LLC KSD363R

    TRANS NPN 120V 6A TO220-3
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    DigiKey KSD363R Bulk 523
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    onsemi KSD363R

    TRANS NPN 120V 6A TO220-3
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    DigiKey KSD363R Bulk 1,200
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    onsemi KSD363Y

    TRANS NPN 120V 6A TO220-3
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    DigiKey KSD363Y Bulk 1,200
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    onsemi KSD363O

    TRANS NPN 120V 6A TO220-3
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    DigiKey KSD363O Bulk 1,200
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    Find more KSD363 price and stock on Findchips.com

    KSD363 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KSD363 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSD363 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan PDF
    KSD363 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    KSD363 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    KSD363 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    KSD363 Samsung Electronics NPN Epitaxial Silicon Transistor Scan PDF
    KSD363O Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSD363OTU Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSD363R Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSD363R_NL Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSD363RTU Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSD363Y Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSD363YTU Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    KSD363YTU_NL Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF

    KSD363 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KSD363

    Abstract: No abstract text available
    Text: KSD363 NPN EPITAXIAL SILICON TRANSISTOR B/W TV HORIZONTAL DEFLECTION OUTPUT TO-220 • Collector-Base Voltage: VCBO=300V • Collector Current: IC=6A • Collector Dissipation: PC=40W TC=25°C ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage


    Original     		PDF KSD363 O-220 KSD363

    KSD363

    Abstract: TV power transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSD363 DESCRIPTION •Collector-Base Breakdown Voltage: V BR CBO= 300V(Min) ·Collector Current- IC= 6A ·Collector Power Dissipation: PC= 40W@ TC= 25℃ APPLICATIONS ·Designed for B/W TV horizontal deflection output applications.


    Original     		PDF KSD363 KSD363 TV power transistor

    d363-r

    Abstract: D363-Y FAIRCHILD to220 package
    Text: KSD363 KSD363 B/W TV Horizontal Deflection Output • Collector-Base Voltage : VCBO=300V • Collector Current : IC=6A • Collector Dissipation : PC=40W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		PDF KSD363 O-220 KSD363 KSD363O KSD363OTU KSD363R KSD363RTU KSD363Y KSD363YTU d363-r D363-Y FAIRCHILD to220 package

    KSD363

    Abstract: No abstract text available
    Text: KSD363 KSD363 B/W TV Horizontal Deflection Output • Collector-Base Voltage : VCBO=300V • Collector Current : IC=6A • Collector Dissipation : PC=40W TC=25°C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original     		PDF KSD363 O-220 KSD363

    fjaf6812

    Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
    Text: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320


    Original     		PDF O-126 KSC2682 KSC3502 KSC2258 KSC2258A KSC3503 KSC3953 KSC2688 BD150 KSC5305D fjaf6812 tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920

    BJT BD139

    Abstract: TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003
    Text: Discrete Power BJT General Purpose Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320 0.01 - 0.6 KSC2258 0.1


    Original     		PDF O-126 KSC2682 KSC3502 KSC2258 KSC2258A KSC3503 KSC3953 KSC2688 BD157 2JD210 BJT BD139 TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


    Original     		PDF 48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


    Original     		PDF MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


    Original     		PDF MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


    Original     		PDF MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64

    BD179-10 equivalent

    Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original     		PDF BD179 BD180 BD179-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD179-10 equivalent BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1

    sec tip41c

    Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power


    Original     		PDF MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943

    TRANSISTOR BC 384

    Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required


    Original     		PDF TIP47 E69369, MJF47 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TRANSISTOR BC 384 BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100

    Transistor 2sC1060

    Abstract: 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary Silicon Power Transistors PNP BDW46 BDW47* . . . designed for general purpose and low speed switching applications. • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:


    Original     		PDF BDW46 BDW42/BDW47 220AB BDW42* BDW47* TIP73B TIP74 TIP74A TIP74B Transistor 2sC1060 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59

    MJ11017 equivalent

    Abstract: BU108 MJ11021 BU326 BU100 MJE3055T
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types


    Original     		PDF MJ11018, MJ11022, MJ11017 MJ11021* MJ11018* MJ11022 TIP73B TIP74 TIP74A TIP74B MJ11017 equivalent BU108 MJ11021 BU326 BU100 MJE3055T

    Untitled

    Abstract: No abstract text available
    Text: KSD363 NPN EPITAXIAL SILICON TRANSISTOR B/W TV HORIZONTAL DEFLECTION OUTPUT • Collector-Base Voltage V Cao=300V • Collector Current lc=6A • Collector Dissipation Pc=40W Tc=25t." ABSO LUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage


    OCR Scan     		PDF KSD363

    Untitled

    Abstract: No abstract text available
    Text: KSD363 NPN EPITAXIAL SILICON TRANSISTOR B/W TV HORIZONTAL DEFLECTION OUTPUT • Collector-Base Voltage: V Cbo = 3 0 0 V • Collector Current: lc=6A • Collector Dissipation: Pc=40W Tc=25°C ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating Unit Collector-Base Voltage


    OCR Scan     		PDF KSD363

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSD363 B/W TV HORIZONTAL DEFLECTION OUTPUT TO -2 20 • Collector-Base Voltage Vcso=300V • Collector Current lc =6A • Collector Dissipation Pc =40W Tc =25oC ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage


    OCR Scan     		PDF KSD363 Vbltage40

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSD363 B/W TV HORIZONTAL DEFLECTION OUTPUT • C ollector-B ase Voltage: V Cb o = 3 0 0 V • C ollecto r C urrent: lc=6A • C ollecto r D issipation: P c= 4 0 W T c=25°C ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-B ase Voltage


    OCR Scan     		PDF KSD363

    KSD363

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSD363 B/W TV HORIZONTAL DEFLECTION OUTPUT • C ollector-Base Voltage: V Cb o = 3 0 0 V • C ollector Current: lc=6A • C ollector Dissipation: Pc= 4 0 W T c =25°C ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Rating


    OCR Scan     		PDF KSD363 O-220 KSD363