KMM366F213BK6
Abstract: KMM364E124BJ6 KMM366F213BK-6 KMM374F410BK6 83AK KMM366F410BK6 KMM374F400BK6 KMM366F400BK6 124BT-L7 KMM364C12
Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line Memory Module SIMM l-l. Fast Page ( FP ) Mode ;16MBased 2Mx36 4Mx32 4Mx3fi 8Mx32 8Mx3C 64MBased>- KMM5321200BW/BWG-6.Tf KMM5321200BW/BWGKMM5361203BW/BWG-6 KMM5361203BW/BWG-7 KMM5322200BW/BWG-6 KMM5322200BW/BWG-7
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OCR Scan
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2Mx36
4Mx32
8Mx32
KMM374F4l
KMM374F410BK-6
8Mx64
MM366F883AK-5_
KMM366F883AK-6
KMM366F803AK-5
KMM374F
KMM366F213BK6
KMM364E124BJ6
KMM366F213BK-6
KMM374F410BK6
83AK
KMM366F410BK6
KMM374F400BK6
KMM366F400BK6
124BT-L7
KMM364C12
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KMM5322200BW/BWG-7
Abstract: No abstract text available
Text: Preliminary KMM5322200BW/BWG DRAM MODULE KMM5322200BW/BWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM G EN ERA L DESC RIPTIO N FEATURES The Samsung KM M 5322200BW is a 2M bit x 32 • Part Identification Dynam ic RAM high density m em ory module. The
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OCR Scan
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KMM5322200BW/BWG
KMM5322200BW/BWG
2Mx32
1Mx16
5322200BW
72-pin
M5322200BW
KMM5322200BW
KMM5322200BW/BWG-7
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HA509
Abstract: H14E D019
Text: Preliminary KMM5322200BW/BWG DRAM MODULE KMM5322200BW/BWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM G E N E R A L D E S C R IP T IO N The Samsung KMM5322200BW is a 2M bit x 32 FEA TU R ES • Part Identification Dynam ic RAM high density m em ory module. The
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OCR Scan
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KMM5322200BW/BWG
KMM5322200BW/BWG
2Mx32
1Mx16
KMM5322200BW
42-pin
72-pin
HA509
H14E
D019
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S/KMM5322200BW/BWG-6
Abstract: M53222
Text: K MM5 3 2 2 2 0 0 B W DRAM Modul e ELECTRONICS KMM5322200BW/BWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KM M5322200BW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322200BW consists of four CMOS
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OCR Scan
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KMM5322200BW/BWG
2Mx32
1Mx16
M5322200BW
KMM5322200BW
42-pin
72-pin
S/KMM5322200BW/BWG-6
M53222
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Untitled
Abstract: No abstract text available
Text: Preliminary KMM5322200BW/BWG DRAM MODULE KMM5322200BW/BWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322200BW is a 2M bit x 32 Dynamic RAM high density memory module. The • Part Identification
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OCR Scan
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KMM5322200BW/BWG
KMM5322200BW/BWG
2Mx32
1Mx16
KMM5322200BW
KMM5322200BW
cycles/16ms
KMM5322200BWG
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1004CL
Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-' -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7
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OCR Scan
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KMM5321200BW/BWG-6
5321200BW/BWG-'
KMM5361203BW/8
KMM5322200BW/BWG-6
KMM5322100BKU/BKUG-5
MM5361203BW/BWG-7
KMM5322200BW/BWG-7
2MX32
KMM5322100BK
2Mx36
1004CL
44V16
366F
44C40
372V3280
2100B-7
M5368
KMM5368103B
44v16100
dram module kmm 2mx32
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1MX16
Abstract: KMM5324104BK KMM5321200B
Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE DRAM Module Org. Part No. Feature 4 Byte Single In-Line Memory Module 5 V 1Mx32 1Mx36 2Mx32 4Mx36 8Mx32 8Mx36 1— -— — r ÍF P .S G , PPD 1Mx16, SOJ 60/70 750 1024/16 r ~ m o w KMM5321200BW/BWG
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OCR Scan
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1Mx32
KMM5321200AW/AWG
KMM5321200BW/BWG
KMM5321204AW/AWG
KMM5321204BW/BWG
1Mx36
M15361203A
1Mx16,
1Mx16
16Mx4,
1MX16
KMM5324104BK
KMM5321200B
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KMM364C12
Abstract: KMM53616000AK KMM5322100BK 2MX32 1MX16
Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Intro d u ctio n . DRAM Module- 13 13 DRAM for
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