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    KM48S8030BT-F10

    Abstract: KMM466S823BT2-F0 KMM466S823BT2
    Text: KMM466S823BT2 144pin SDRAM SODIMM Revision History Revision .2 March 1998 Some Parameter values & Chracteristics of comp. level are changed as below : - Input leakage Currents (Inputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1.5uA.


    Original     		PDF KMM466S823BT2 144pin 66MHz KM48S8030BT-F10 KMM466S823BT2-F0 KMM466S823BT2

    Untitled

    Abstract: No abstract text available
    Text: KMM466S823BT2 144pin SDRAM SODIMM Revision History R evision .2 M arch 1998 Som e Param eter values & C hracteristics of comp, level are changed as below : - Input leakage Currents (Inputs) : ± 5uA to ± 1 uA. Input leakage Currents (I/O) : ± 5uA to ± 1,5uA.


    OCR Scan     		PDF KMM466S823BT2 144pin KM48S8030BT

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM466S823BT2_144pin SDRAM SODIMM KMM466S823BT2 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION Perform ance range The Sam sung KM M 466S823BT2 is a 8M bit x 64 Synchronous


    OCR Scan     		PDF KMM466S823BT2_ 144pin KMM466S823BT2 8Mx64 466S823BT2 100MHz 400mil 144-pin

    Untitled

    Abstract: No abstract text available
    Text: KMM466S823BT2 144pin SDRAM SODIMM R evision H istory Revision .2 March 1998 Som e Param eter values & C hracteristics of comp, level are changed as below : - I nput leakage Currents (I nputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1,5uA.


    OCR Scan     		PDF KMM466S823BT2 144pin KM48S8030BT

    Untitled

    Abstract: No abstract text available
    Text: 144pin SDRAM SODIMM KMM466S823BT2 KMM466S823BT2 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S823BT2 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM466S823BT2 KMM466S823BT2 144pin 8Mx64 400mil 144-pin

    Untitled

    Abstract: No abstract text available
    Text: KM M 4 6 6 S 8 2 3 B T 2 144pm S D R A M S O D IM M Revision History R evision .2 M arch 1998 • Some Parameter values & Chracteristics of comp, level are changed as below : -In p u t leakage Currents (Inputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1.5uA.


    OCR Scan     		PDF 144pm 44pin KM48S8030BT

    KMM366S424BTL-G0

    Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
    Text: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .


    OCR Scan     		PDF KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT 1Mx16 KM44S16020BT KM48S8020BT KM416S4020BT ------------------------------------16Mx4 4Mx64 KMM366S424BTL-G0 KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT

    Untitled

    Abstract: No abstract text available
    Text: KMM466S823BT3 144pin SDRAM SODIMM Revision History Revision .2 March 1998 Some Parameter values & Chracteristics of comp, level are changed as below : - Input leakage C urrents (Inputs) : ± 5uA to ± 1 uA. Input leakage C urrents (I/O) : ± 5uA to ± 1.5uA.


    OCR Scan     		PDF KMM466S823BT3 144pin 48S8030BT