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    KM93C66 Search Results

    KM93C66 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM93C66 Samsung Electronics 2K / 4K Bit Serial Electrically Erasable PROM Scan PDF
    KM93C66G Samsung Electronics 2K / 4K Bit Serial Electrically Erasable PROM Scan PDF
    KM93C66GD Samsung Electronics 2K / 4K Bit Serial Electrically Erasable PROM Scan PDF
    KM93C66V Samsung Electronics 2K / 4K Bit Serial Electrically Erasable PROM Scan PDF
    KM93C66VG Samsung Electronics 2K / 4K Bit Serial Electrically Erasable PROM Scan PDF
    KM93C66VGD Samsung Electronics 2K / 4K Bit Serial Electrically Erasable PROM Scan PDF

    KM93C66 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    atmel 93C46

    Abstract: 93c46 atmel 93C46 national 93C46 national semiconductor 24c04 Atmel 93c46 I2C atmel 24c04 ATMEL 24c32 atmel 24c02 24c04a atmel
    Text: SERIAL EEPROM Serial EEPROM Cross Reference Guide The purpose of this document is to provide a quick way to determine the closest Microchip equivalent to Serial EEPROMs produced by other manufacturers. The cross reference section is broken down by manufacturer and lists all parts from that manufacturer, and the


    Original     		DS21090D-page atmel 93C46 93c46 atmel 93C46 national 93C46 national semiconductor 24c04 Atmel 93c46 I2C atmel 24c04 ATMEL 24c32 atmel 24c02 24c04a atmel PDF

    ATMEL 93C86

    Abstract: 93c46 rotated atmel 708 atmel 93C46 atmel 222 93C46 atmel 717 93C46 national X24c64 93c46 atmel 93c46 spi
    Text: SERIAL EEPROM Serial EEPROM Cross Reference Guide The purpose of this document is to provide a quick way to determine the closest Microchip equivalent to Serial EEPROMs produced by other manufacturers. The cross reference section is broken down by manufacturer and lists all parts from that manufacturer, and the


    Original     		DS21090F-page ATMEL 93C86 93c46 rotated atmel 708 atmel 93C46 atmel 222 93C46 atmel 717 93C46 national X24c64 93c46 atmel 93c46 spi PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS EEPROM KM93C56V/KM93C66V 2K/4K Bit Serial Electrically Erasable PROM FEATURES • Enhanced extended operating voltage: 2.0V-4.5V • Low power consumption — Active: 2 mA TTL — Standby: 100 jxA (TTL) • Memory organization: — 128 x 16 bits for KM93C56V


    OCR Scan     		KM93C56V/KM93C66V KM93C56V KM93C66 KM93C56V/66V PDF

    LTSK

    Abstract: No abstract text available
    Text: PRELIMINARY KM93C56/KM93C66 CMOS EEPROM 2K /4 K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Single 5 volt supply • Low power consumption — Active: 3 mA TTL — Standby: 100 /iA (TTL) • Memory organization: — 1 2 8 x 1 6 bits for KM93C56


    OCR Scan     		KM93C56/KM93C66 KM93C56 KM93C66 004i0 LTSK PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS EEPROM KM93C56/KM93C66 2 K /4 K Bit Serial Electrically Erasable P R O M FEATURES GENERAL DESCRIPTION • Single 5 volt supply • Low power consumption — Active: 3 mA TTL — Standby: 100 nA (TTL) • Memory organization: — 128 x 16 bits for KM93C56


    OCR Scan     		KM93C56/KM93C66 KM93C56 KM93C66 KM93C56/66 PDF

    KM93C56

    Abstract: KM93C56V KM93C66 KM93C56/KM93C66
    Text: SAM S UN G E L E C T R O N I C S INC b7E D B 7Tb4m2 KM93C56/KM93C66 OOlböSfl Ö71 CMOS EEPROM 2K /4 K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Single 5 volt supply • Low power consumption — Active: 3 mA TTL — Standby: 250 tiA (TTL)


    OCR Scan     		KM93C56/KM93C66 128x16 KM93C56 KM93C66 KM93C56/66 KM93C56V/KM93C66V KM93C56 KM93C56V KM93C66 PDF

    KM93C66

    Abstract: KM93C56/KM93C66
    Text: KM93C56/KM93C66 CMOS EEPROM 2K /4 K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Single S volt supply • Low power consumption — Active: 3 mA TTL — Standby: 250 ¡ A (TTL) • Memory organization: — 1 2 8 x 1 6 bits tor KM93C56


    OCR Scan     		KM93C56/KM93C66 KM93C56 KM93C66 KM93C56/66 KM93C66 KM93C56/KM93C66 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC h?E D • 7^142 0Dlhfl34 D7S PRELIMINARY KM93C56V/KM93C66V CMOS EEPROM 2 K /4K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Enhanced extended operating voltage: 3 .0 V ~ 5 . 5 V • Low power consumption — Active: 3 mA TTL


    OCR Scan     		0Dlhfl34 KM93C56V/KM93C66V 250pA 93C66 KM93C56V/66V PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS EEPROM KM93C56V/KM93C66V 2 K /4 K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Enhanced extended operating voltage: 3.0V~5.5V • Low power consumption — Active: 3 mA TTL — Standby: 250fiA (TTL) • Memory organization:


    OCR Scan     		KM93C56V/KM93C66V 250fiA KM93C56V KM93C66 KM93C56V/66V 93C56V/66V PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS EEPROM KM93C56/KM93C66 2K /4 K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Enhanced extended operating voltage: 2 .7 V ~ 5 .5 V • Low power consumption — Active : 1 mA — Standby: 50^A • Memory organization:


    OCR Scan     		KM93C56/KM93C66 KM93C KM93C66 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM93C56V/KM93C66V CMOS EEPROM 2 K /4 K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Enhanced extended operating voltage: 2 .0 V -4 .5 V • Low power consumption — Active: 2 mA TTL — Standby: 100 *iA (TTL) • M e m ory o rg a n iz a tio n :


    OCR Scan     		KM93C56V/KM93C66V 93C66 KM93C56V/66V PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D B 7 ^ 4 1 4 2 0Glbfi2fi Ö71 KM 93C56/KM 93C66 CMOS EEPROM 2 K /4 K Bit Serial Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Single 5 volt supply • Low power consumption — Active: 3 mA TTL — Standby: 250 pA (TTL)


    OCR Scan     		93C56/KM 93C66 KM93C56 KM93C66 KM93C56/66 KM93C56V/KM93C66V PDF

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


    OCR Scan     		KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 TC51464 PDF

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


    OCR Scan     		64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000 PDF

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A PDF

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100 PDF

    TC55B8128

    Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6


    OCR Scan     		TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256 PDF

    64x16

    Abstract: 8DIP 28-DIP KM28C64B 128X16
    Text: FUNCTION GUIDE MEMORY ICs 2.5 EEPROM 2 K b it 64K bit Remark 16x16 1MHz CMOS Ext.-timed 8DIP/8SOP Now 1MHz CMOS Self-timed 8DIP/8SOP Now KM93C46/G/GD/I 64x16 1MHz CMOS Self-timed 8DIP/8SOP Now KM93C46V/VG/VGD/I 64x16 250KHZ CMOS 3-OV-Operation 8DIP/8SOP Now


    OCR Scan     		KM93C06/G/GD/I KM93C07/G/GD/I 16x16 16x16 KM93C46/G/GD/I KM93C46V/VG/VGD/I 64x16 128x8 250KHZ 8DIP 28-DIP KM28C64B 128X16 PDF

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan     		KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL PDF

    KM28C64A

    Abstract: No abstract text available
    Text: TABLE OF COm-ENTS FUNCTION GUIDE 1. 2. 3. 4. Introduction. 11 Product G uide. 19


    OCR Scan     		KM75C03A. KM75C101A. KM75C102A. KM75C103A. KM75C104A. KM28C64A PDF

    PE 8001A

    Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1


    OCR Scan     		KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P PE 8001A 23C1001 23C1010 KM68512 km41c256 TFK 805 TFK 001 PDF

    KM424C256Z

    Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100


    OCR Scan     		KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C464P KM424C256Z KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ PDF

    KMM591000AN

    Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
    Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC


    OCR Scan     		KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P KMM591000AN KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble PDF

    al 232 nec

    Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
    Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258


    OCR Scan     		KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference PDF