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    KM641001 Price and Stock

    Samsung Semiconductor KM641001J-20

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics KM641001J-20 103
    • 1 -
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    Quest Components KM641001J-20 82
    • 1 $9.177
    • 10 $9.177
    • 100 $5.6592
    • 1000 $5.6592
    • 10000 $5.6592
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    KM641001J-20 39
    • 1 -
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    Samsung Semiconductor KM641001P-35

    256K X 4 STANDARD SRAM, 35 ns, PDIP28
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM641001P-35 52
    • 1 $12
    • 10 $9
    • 100 $7.8
    • 1000 $7.8
    • 10000 $7.8
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    Samsung Semiconductor KM641001P-20

    IC,SRAM,256KX4,CMOS,DIP,28PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM641001P-20 28
    • 1 $10
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    KM641001 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM641001 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    KM641001-20 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM641001-25 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM641001-35 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM641001A Samsung Electronics 256Kx 4 High Speed Static RAM(5V Operating), Evolutionary Pin Out Operated at Commercial Temperature Range Original PDF
    KM641001A-15 Samsung Electronics 256Kx 4 High Speed Static RAM(5V Operating), Evolutionary Pin Out Operated at Commercial Temperature Range Original PDF
    KM641001A-20 Samsung Electronics 256Kx 4 High Speed Static RAM(5V Operating), Evolutionary Pin Out Operated at Commercial Temperature Range Original PDF
    KM641001AJ-12 Samsung Electronics 256K x 4 Bit (with Inverted OE)High-Speed CMOS Static RAM Original PDF
    KM641001AJ-15 Samsung Electronics 256K x 4 Bit (with Inverted OE)High-Speed CMOS Static RAM Original PDF
    KM641001B Samsung Electronics 256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out Original PDF
    KM641001B-15 Samsung Electronics 256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out Original PDF
    KM641001B-20 Samsung Electronics 256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out Original PDF
    KM641001BJ-15 Samsung Electronics 256K x 4 Bit (with OE)High-Speed CMOS Static RAM Original PDF
    KM641001BJ-20 Samsung Electronics 256K x 4 Bit (with OE)High-Speed CMOS Static RAM Original PDF
    KM641001BL-15 Samsung Electronics 256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out Original PDF

    KM641001 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM641001B

    Abstract: No abstract text available
    Text: PRELIMINARY KM641001B/BL CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target. Feb. 1st 1997 Design Target Rev.1.0


    Original     		PDF KM641001B/BL 256Kx4 120mA 110mA 100mA 118mA 28-SOJ-400A 004MAX KM641001B

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM641001B CMOS SRAM Document Title 256Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target. Feb. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet.


    Original     		PDF KM641001B 256Kx4 120mA 110mA 100mA 118mA 28-SOJ-400A 004MAX

    01-I04

    Abstract: KM641001A KM641001A-15 KM641001A-20
    Text: PRELIMINARY KM641001A CMOS SRAM 256K x 4 B it With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) The KM641001A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words


    OCR Scan     		PDF KM641001A KM641001A-15 KM641001A-17 KM641001A-20 KM641001AJ 28-SQJ-400 KM641001A 576-bit OOPm53 01-I04 KM641001A-15 KM641001A-20

    Untitled

    Abstract: No abstract text available
    Text: KM641001A CMOS SRAM 256K x 4 Bit With ÜE High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES The KM641001A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation


    OCR Scan     		PDF KM641001A KM641001A 576-bit KM641001A-15 KM641001A-17 KM641001A-20

    KM641001

    Abstract: No abstract text available
    Text: KM641001 CMOS SRAM 256Kx 4 Bit With UE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) • Low Power Dissipation Standby (TTL) : 40 mA(Max.) The KM641001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words


    OCR Scan     		PDF KM641001 256Kx KM641001 576-bit KM641001-20 KM641001-25: 130mA

    KM641001

    Abstract: No abstract text available
    Text: CMOS SRAM KM641001 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 2 0 ,2 5 ,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max) Operating : KM641001 -20 :1 50mA (max.) KM641001 -25 : 130mA (max.)


    OCR Scan     		PDF KM641001 KM641001 130mA KM641001-35: 110mA KM641001P 28-DIP-400 KM641001J 28-SQJ-400

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM641001A CMOS SRAM 256K x 4 Bit With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Time 15,17,20 ns(Max.) The KM641001A is a 1,048,576-bit high-speed Static • Low Power Dissipation Standby (TTL) Random Access Memory organized as 262,144 words


    OCR Scan     		PDF KM641001A KM641001A 576-bit KM641001A-15 KM641001A-17 41001A-20

    Untitled

    Abstract: No abstract text available
    Text: KM641001A CMOS SRAM Document Title 256Kx 4 High Speed Static RAM 5V Operating , Evolutionary Pin Out. Operated at Commercial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial release with Design Target. Jan. 18th, 1995 Design Target Rev. 1.0


    OCR Scan     		PDF KM641001A 256Kx 15/17/20ns 190/180/170mA 145/145/140mA

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM641001 25 6K X 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Tim e 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS) : 2m A (max.) Operating KM641001P/J-20: 150m A (max) K M 641001P/J-25: 130m A (max)


    OCR Scan     		PDF KM641001 KM641001P/J-20: 641001P/J-25: KM641001P/J-35: KM641001P: 28-pin 641001J: piM641001

    Untitled

    Abstract: No abstract text available
    Text: KM641001A CMOS SRAM 256K x 4 Bit With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fa st A cce ss T im e 1 5,1 7,20 n s(M ax.) T h e K M 6 4 1 0 0 1 A is a 1 ,0 4 8 ,5 7 6 -b it h ig h -s p e e d S ta tic • Low P o w e r D issip a tio n


    OCR Scan     		PDF KM641001A

    KM641001

    Abstract: KM641001-25 km641001j KM641001-35 741-145
    Text: CM O S SRAM KM 641001 262,144 WORD x 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A c c e s s T im e : 2 0 ,2 5 ,35ns max. • L o w P o w e r D issipation S tand by (TTL) : 40m A (max.) (CMOS) : 2m A (max) O pe rating : KM641001 -20 : 150m A (max.)


    OCR Scan     		PDF KM641001 KM641001 150mA KM641001-25 130mA KM641001-35 110mA KM641001P 28-DIP-400 KM641001J km641001j 741-145

    Untitled

    Abstract: No abstract text available
    Text: KM641001B CMOS SRAM Document Tills 256Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev. No. History Draft Data Rev. 0.0 Initial release with Design Target. Feb. 1st, 1997 R ev.1.0 Release to Prelim inary Data Sheet.


    OCR Scan     		PDF KM641001B 256Kx4 120mA 110mA 100mA 118mA 28-SOJ-400A

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM641001 256K x 4 Bit With UB High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) The KM641001 is a 1,048,576-bit • Low Power Dissipation Random Access Memory organized as 262,144 words Standby (TTL)


    OCR Scan     		PDF KM641001 KM641001 576-bit

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b?E D m 7 T b 4 m 2 D017bMfl 7^5 KM641001 CMOS SRAM 2 5 6 K X 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 1 7 ,2 0 ,2 5 ,30ns Max. • Low Power Dissipation Standby (TTL) : 40mA (max.)


    OCR Scan     		PDF D017bMfl KM641001 KM641001P/J-17 KM641001P/J-20 150mA KM641001P/J-25 130mA KM641001P/J-30 110mA KM641001P:

    Untitled

    Abstract: No abstract text available
    Text: KM641001 CMOS SRAM 256KX4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A c c e s s T im e 17,20, 2 5 ,30ns Max. • Low Pow er D issipation T h e K M 6 4 1 0 0 1 is a 1 , 0 4 8 , 5 7 6 - b it h ig h -s p e e d s ta tic ra n d o m a c c e s s m e m o ry o rg a n iz e d as 2 6 2 , 1 4 4 w o rd s


    OCR Scan     		PDF KM641001 256KX4 KM641001P/J-17 KM641001P/J-20 KM641001P/J-25 KM641001P/J-30 KM641001P: 28-pin 400mil) KM641001J:

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM641001A Document Title 256Kx 4 High Speed Static RAM 5V Operating , Evolutionary Pin Out. Operated at Commercial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial release with Design Target. Jan. 18th, 1995 Design Target Rev. 1.0


    OCR Scan     		PDF KM641001A 256Kx 15/17/20ns 190/180/170m 12/12/13ns 8/9/10ns 15/17/2ring

    KM641001

    Abstract: No abstract text available
    Text: KM641001 CMOS SRAM 256K x 4 Bit With UE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns(Max.) The KM641001 is a 1,048,576-bit • Low Power Dissipation Random Access M em ory organized as 262,144 words Standby (TTL)


    OCR Scan     		PDF KM641001 KM641001P: 28-DIP-400 KM641001J: 28-SOJ-4QOB KM641001 576-bit

    Untitled

    Abstract: No abstract text available
    Text: KM641001/L CMOSSRAM 256K X 4 Bit with OE High-Speed CMOS Static RAM FEATURES Fast Access Time 20,25,35ns(Max.) Low Power Dissipation Standby (TTL) : 40mA(Max.) (CMOS) : 2mA(Max.) 0.5mA(Max.) - L-Ver. only Operating KM641001/L - 20 : 150mA(Max.) KM641001/L - 25 : 130mA(Max.)


    OCR Scan     		PDF KM641001/L KM641001/L 150mA 130mA 110mA KM641001/LP 28-DIP-400 KM641001/LJ

    KM641001-20

    Abstract: KM641001-25 km641001 TAE 1102 KM641001-35 KM641001P d02144
    Text: CMOS SRAM KM641001 256K x 4 Bit With UB High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES The KM641001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words • Fast Access Time 20,25,35 ns(Max.) • Low Power Dissipation


    OCR Scan     		PDF KM641001 256Kx KM641001-20 KM641001-25 KM641001-35 KM641001P: 28-DIP-400 KM641001 28-SOJ-400B KM641001-20 KM641001-25 TAE 1102 KM641001-35 KM641001P d02144

    Untitled

    Abstract: No abstract text available
    Text: KM641001 CMOS SRAM 2 5 6 K X 4 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.) Operating KM641001P/J-20: 150mA (max) KM641001P/J-25: 130mA (max)


    OCR Scan     		PDF KM641001 KM641001P/J-20: 150mA KM641001P/J-25: 130mA KM641001P/J-35: 110mA KM641001P: 28-pin 400mil)

    641001

    Abstract: Samsung 6410 BL20U
    Text: T r e ’> 9' y KM641001B/BL, KM641001BI/BLI CMOS SRAM 256K x 4 Bit with OE High-Speed CMOS Static RAM FEATURES G E N E R A L D E S C R IP T IO N Fast Access Time 1 5 ,1 7 , 2 0 * • (Max.) Low Power Dissipation Standby (TTL) : 2 0 » • (Max.) ( C M O S ):


    OCR Scan     		PDF KM641001B/BL, KM641001BI/BLI KM641001B/BL 641001B/BL KM641 KM641001B/BLJ 28-SO J-400A 576-bit 641001 Samsung 6410 BL20U

    Untitled

    Abstract: No abstract text available
    Text: KM641001B CMOS SRAM 256K x 4 Bit with OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,20ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating KM641001B -15 : 120mA(Max.) KM641001B - 20 :1 18mA(Max.)


    OCR Scan     		PDF KM641001B KM641001B 120mA KM641Q01BJ 28-SOJ-4QOA 576-blt

    KM641001

    Abstract: No abstract text available
    Text: KM641001 CMOS SRAM 2 5 6 K X 4 Bit High-Speed CMOS Static RAM FEATURES G E N E R A L D E S C R IP T IO N • Fast Access Tim e 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.) Operating KM641001P/J-20: 150mA (max)


    OCR Scan     		PDF KM641001 KM641001P/J-20: 150mA 1P/J-25: 130mA 1P/J-35: 641001P: 28-pin KM641001J: KM641001

    KM641001A

    Abstract: KM641001A-15 KM641001A-20
    Text: . L ' CMOS SRAM KM641001A 256K x 4 Bit With UB High-Speed CMOS Static RAM , ' FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM641001A-15 : 190 mA (Max.)


    OCR Scan     		PDF KM641001A KM641001A-15 KM641001A-17 KM641001A-20 KM641001AJ 28-SOJ-4Q0 KM641001A 576-bit DD23745 KM641001A-15 KM641001A-20