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    ARCOTEK KM616BV4002J-12

    SRAM ASYNC FAST 4MB 256KX16 3.3V
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    DigiKey KM616BV4002J-12 Tube 100
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    Samsung Semiconductor KM616BV4002J-12

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    Bristol Electronics KM616BV4002J-12 144
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    Quest Components KM616BV4002J-12 55
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    Samsung Semiconductor KM616BV4002J-15

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    Quest Components KM616BV4002J-15 7
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    sec KM616BV4002J12

    256K X 16 BIT HIGH-SPEED BICMOS STATIC RAM(3.3V OPERATING) Standard SRAM, 256KX16, 12ns, BICMOS, PDSO44
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    ComSIT USA KM616BV4002J12 86
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    KM616BV4002J Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM616BV4002J-12 Samsung Electronics 256 x 16-Bit High Speed BiCMOS Static RAM Scan PDF
    KM616BV4002J-15 Samsung Electronics 256 x 16-Bit High Speed BiCMOS Static RAM Scan PDF
    KM616BV4002J-20 Samsung Electronics 256 x 16-Bit High Speed BiCMOS Static RAM Scan PDF

    KM616BV4002J Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51 PDF

    UM61256AK-15

    Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE


    Original     		CP005-1E AS7C1024-12JC AS7C1024-12PC AS7C1024-12TJC AS7C1024-12TPC AS7C1024-15JC AS7C1024-15PC AS7C1024-15TJC AS7C1024-15TPC AS7C1024-20JC UM61256AK-15 UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256 PDF

    KM62256BLG-7

    Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
    Text: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC


    Original     		C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5 IS61C632A-5TQ C7C1335-7AC KM62256BLG-7 K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Information BiCMOS SRAM KM616BV4002 262,144 WORD x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 1 2 ,1 5 ,20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM616BV4002J-12 :175mA(Max.)


    OCR Scan     		KM616BV4002 KM616BV4002J-12 175mA KM616BV4002J-15 160mA KM616BV4002J-20 155mA KM616BV4002 16-bits. 44-SO] PDF

    KO10

    Abstract: No abstract text available
    Text: Advanced Information KM616BV4002 BiCMOS SRAM 262,144 WORD x 16 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 12,15, 20ns Max. • Low Power Dissipation Standby fTTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM616BV4002J-12 :175mA(Max.)


    OCR Scan     		KM616BV4002 KM616BV4002J-12 175mA KM616BV4002J-15 160mA KM616BV4002J-20 155mA 44-SOJ-4 KM616BV4002 16-bits. KO10 PDF

    KM616BV4002

    Abstract: KM616BV4002J KM616BV4002J-12 KM616BV4002J-15 KM616BV4002J-20
    Text: PRELIMINARY BiCMOS SRAM KM616BV4002 25 6K x 16 Bit High-Speed BiCMOS Static RAM 3.3V Operating GENERAL DESCRIPTION FEATURES • Fast Access Time 12,15,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS):30 mA(Max.) Operating KM616BV4002J-12 : 240m A (M ax.)


    OCR Scan     		KM616BV4002 256Kx KM616BV4002J-12 240mA KM616BV4002J-15 KM616BV4002J-20 I/O9-4/O16 KM616BV4002J 44-SOJ-400 KM616BV4002 KM616BV4002J KM616BV4002J-12 KM616BV4002J-15 KM616BV4002J-20 PDF

    KM616BV4002J-15

    Abstract: KM616BV4002 KM616BV4002J-12 KM616BV4002J-20 II06 A16-A17
    Text: Advanced Information BiCMOS SRAM KM616BV4002 262,144 WORD x 16 Bit High-Speed BiCMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 1 2 ,1 5 ,20ns Max. • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max.) Operating KM616BV4002J-12 :175m A(Max.)


    OCR Scan     		KM616BV4002 KM616BV4002J-12 175mA KM616BV4002J-15 160mA KM616BV4002J-20 155mA I/09-I/016 44-SOJ-400 KM616BV4002 KM616BV4002J-15 KM616BV4002J-12 KM616BV4002J-20 II06 A16-A17 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY BiCMOS SRAM KM616BV4002 25 6K x 16 Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS):30 mA(Max.) Operating KM 616BV4002J-12 : 240m A (M ax.)


    OCR Scan     		KM616BV4002 616BV4002J-12 KM616BV4002J-15 4002J-20: KM616BV4002J 44-SOJ-400 KM616BV4002 304-bit 0031fc PDF

    A13j

    Abstract: 3b711 KM616BV4002 KM616BV4002J
    Text: KM616BV4002 CMOS SRAM 256K x16B it High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION •Fast Access Time 12,13,15ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM616BV4002-12:240mA(Max.)


    OCR Scan     		KM616BV4002 256Kx 16Bit KM616BV4002-12 240mA KM616BV4002 KM616BV4002J 36-SOJ-400 512x18 A13j 3b711 KM616BV4002J PDF

    Untitled

    Abstract: No abstract text available
    Text: KM616BV4002 BICMOS SRAM 256K X 16 Bit High-Speed BiCMOS Static RAM 3.3v Operating FEATURES G E N E R A L D E S C R IP T IO N •Fast Access Time 12,13,15ns(Max.) • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 30mA(Max) Operating KM616BV4002 -1 2 : 240mA(Max.)


    OCR Scan     		KM616BV4002 KM616BV4002 240mA 235mA 230mA 1/01-l/Os, KM616BV4002J 44-SOJ-400 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM616BV4002 CMOS SRAM 256K x 16Bit High-Speed BiCMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION •Fast Access Time 12,13,15ns(Max.) • Low Power Dissipation Standby (TTL) : 60 mA(Max.) (CMOS): 30 mA(Max.) Operating KM616BV4002 -1 2 :2 4 0 mA(Max.)


    OCR Scan     		KM616BV4002 16Bit KM616BV4002 KM616BV4002J: 36-SQJ-400 304-bit September-1996 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM616BV4002 BiCMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Oct. 14th, 1993 Design Target


    OCR Scan     		KM616BV4002 256Kx16 10/12/15ns 12/15/20ns PDF