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    Samsung Electro-Mechanics KM48S2020CT-G10

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    Bristol Electronics KM48S2020CT-G10 21 1
    • 1 $8.96
    • 10 $4.48
    • 100 $4.48
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    SAMSUNG SEMICONDUCTOR KM48S2020CT-G10

    2MX8 SYNCHRONOUS DRAM, 7NS, PDSO44
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KM48S2020CT-G10 18
    • 1 $7.95
    • 10 $3.975
    • 100 $3.975
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    Samsung Semiconductor KM48S2020CT-G10

    2MX8 SYNCHRONOUS DRAM, 7NS, PDSO44
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    Quest Components KM48S2020CT-G10 16
    • 1 $12
    • 10 $6
    • 100 $6
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    Samsung Semiconductor KM48S2020CTG10

    1M X 8BIT X 2 BANKS SYNCHRONOUS DRAM Synchronous DRAM, 2MX8, 7ns, CMOS, PDSO44
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    ComSIT USA KM48S2020CTG10 32,000
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    KM48S2020C Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    km48s2020ct

    Abstract: KM48S2020CT-G
    Text: KM48S2020C CMOS SDRAM Revision History Revision .4 November 1997 - t RDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .5 (Feb. 1998) - Input leakage Currents (Inputs / DQ) are changed.


    Original     		KM48S2020C PC100 km48s2020ct KM48S2020CT-G PDF

    KM48S2020

    Abstract: km48s2020ct KM48S2020CT G10 KM48S2020CT-G
    Text: KM48S2020C CMOS SDRAM Revision History Revision .4 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .5 (Feb. 1998) - Input leakage Currents (Inputs / DQ) are changed.


    Original     		KM48S2020C PC100 KM48S2020 km48s2020ct KM48S2020CT G10 KM48S2020CT-G PDF

    KM48S2020CT-G10

    Abstract: KMM366S403CTL KMM366S403CTL-G0 KM48S2020 KM48S2020CT-G
    Text: KMM366S403CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		KMM366S403CTL 200mV. KMM366S403CTL 4Mx64 66MHz KM48S2020CT-G10 KMM366S403CTL-G0 KM48S2020 KM48S2020CT-G PDF

    CDC2509

    Abstract: KM48S2020 KMM378S203CT-G0 KMM378S203CT-G8 KMM378S203CT-GH KMM378S203CT-GL MA3910
    Text: Preliminary KMM378S203CT SDRAM MODULE KMM378S203CT SDRAM DIMM 2Mx72 SDRAM DIMM with PLL & Register based on 2Mx8, 4K Ref. 3.3V Synchronous DRAMs GENERAL DESCRIPTION FEATURE • Performance range The Samsung KMM378S203CT is a 2M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		KMM378S203CT KMM378S203CT 2Mx72 KMM378S203CT-G8 KMM378S203CT-GH KMM378S203CT-GL KMM378S203CT-G0 400mil CDC2509 KM48S2020 KMM378S203CT-G0 KMM378S203CT-G8 KMM378S203CT-GH KMM378S203CT-GL MA3910 PDF

    KMM374S403CTS-G8

    Abstract: KMM374S403CTS-GH KMM374S403CTS-GL km48s2020ct
    Text: PC100 Unbuffered DIMM KMM374S403CTS KMM374S403CTS SDRAM DIMM 4Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S403CTS is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PC100 KMM374S403CTS KMM374S403CTS 4Mx64 400mil 168-pin KMM374S403CTS-G8 KMM374S403CTS-GH KMM374S403CTS-GL km48s2020ct PDF

    km48s2020ct

    Abstract: KMM374S403CTL-G0 KM48S2020
    Text: KMM374S403CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		KMM374S403CTL 200mV. KMM374S403CTL 4Mx72 100Min 540Min) 150Max 81Max) km48s2020ct KMM374S403CTL-G0 KM48S2020 PDF

    KMM374S203CTL-G0

    Abstract: No abstract text available
    Text: KMM374S203CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		KMM374S203CTL 200mV. KMM374S203CTL 2Mx72 KMM374S203CT57) 150Max 81Max) 118DIA 000DIA KMM374S203CTL-G0 PDF

    KMM374S403CT

    Abstract: KMM374S403CT-G8 KMM374S403CT-GH KMM374S403CT-GL km48s2020ct bdl 39
    Text: KMM374S403CT PC100 SDRAM MODULE Revision History Revision .0 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. I IL(Inputs) : ± 5uA to ± 1uA, I IL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T A = 23°C, f = 1MHz, V REF =1.4V ± 200 mV.


    Original     		KMM374S403CT PC100 KMM374S403CT 4Mx72 Syn450 100Min 540Min) KMM374S403CT-G8 KMM374S403CT-GH KMM374S403CT-GL km48s2020ct bdl 39 PDF

    KM48S8030BT-GL

    Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
    Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.


    Original     		PC100 KM48S8030BT-GL nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832 PDF

    KM48S2020CT-F10

    Abstract: KMM466S203CT-F0 KM48S2020
    Text: KMM466S203CT 144pin SDRAM SODIMM Revision History Revision . 2 Mar. 1998 •Some Parameter values & Charcteristeristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		KMM466S203CT 144pin 200mV. KMM466S203CT 2Mx64 66MHz KM48S2020CT-F10 KMM466S203CT-F0 KM48S2020 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM48S2020C CMOS SDRAM Revision History Revision ,4 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .5 (Feb. 1998) - input leakage Currents (Inputs / DQ) are changed.


    OCR Scan     		KM48S2020C PC100 44-TS 0P2-400F 44-TSQP2-400R 003b2SB PDF

    km48s2020ct

    Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
    Text: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks


    OCR Scan     		KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT KM44S16020BT KM48S8020BT KM416S4020BT KM416S4021BT KM44S160308T KM48S8030BT S823B 4MX16 54-PIN u108h KM48S2020 44s16030 PDF

    km48s2020ct

    Abstract: KM48S2020CT-G
    Text: KM48S2020C CMOS SDRAM 1M x 8Bit x 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM48S2020C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNG'S high performance CMOS technol­


    OCR Scan     		KM48S2020C KM48S2020C 10/AP km48s2020ct KM48S2020CT-G PDF

    KMM366S424BTL-G0

    Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
    Text: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .


    OCR Scan     		KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT 1Mx16 KM44S16020BT KM48S8020BT KM416S4020BT ------------------------------------16Mx4 4Mx64 KMM366S424BTL-G0 KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM374S403CTL PC66 SDR AM M O D U L E Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp, level are changed as below : -Input leakage currents (Inputs) : ±5uA to ±1uA. -Input leakage currents (I/O ): ±5uA to ±1.5uA.


    OCR Scan     		KMM374S403CTL 200mV. 4Mx72 KMM374S4and 150Max 250Max) KM48S2020CT PDF

    KMM366S403CTL-GO

    Abstract: No abstract text available
    Text: KMM366S403CTL PC66 SDRAM MODULE KMM366S403CTL SDRAM DIMM 4 M x 6 4 S D R A M D IM M b a se d on 2 M x 8 ,4 K R efresh, 3 .3 V S y n c h ro n o u s D R A M s w ith S P D GENERAL DESCRIPTION FEATURE The Samsung KMM366S403CTL is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM366S403CTL KMM366S403CTL 400mil 168-pin 000DIA KM48S2020CT KMM366S403CTL-GO PDF

    U655

    Abstract: No abstract text available
    Text: KMM374S203CTL PC66 SDRAM MODULE KMM374S203CTL SDRAM DIMM 2Mx72 SDRAM DIMM with ECC based on 2Mx8,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S203CTL is a 2M bit x 72 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM374S203CTL KMM374S203CTL 2Mx72 400mil 168-pin 000DIA U655 PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM374S203CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •S om e Parameter values & Characteristics of comp, level are changed as below : - Input leakage currents (Inputs) : +5uA to ±1 uA. - Input leakage currents (I/O) : + 5 u A to ± 1 .5uA.


    OCR Scan     		KMM374S203CTL 200mV. KMM374S203CTL 2Mx72 150Max KM48S2020CT PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM374S403CT PC100 SDRAM MODULE Revision History Revision .0 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Com ponent level are changed. In(lnputs) : ± 5uA to ± 1 u A , - Cin to be measured at V dd I il (DQ) : ± 5uA to ± 1.5uA. = 3.3V, T a = 23°C, f = 1 MHz, V


    OCR Scan     		KMM374S403CT PC100 KMM374S403CT 4Mx72 150Max KM48S2020CT PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM374S403CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •S om e Parameter values & Characteristics of comp, level are changed as below : - Input leakage currents (Inputs) : +5uA to ±1 uA. - Input leakage currents (I/O) : + 5 u A to ± 1 .5uA.


    OCR Scan     		KMM374S403CTL 200mV. KMM374S403CTL 4Mx72 150Max 250Max) KM48S2020CT PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM374S403CT PC100 SDRAM MODULE KMM374S403CT SDRAM DIMM 4Mx72 SDRAM DIMM with ECC based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S403CT is a 4M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM374S403CT KMM374S403CT PC100 4Mx72 400mil 168-pin PDF

    870Q

    Abstract: mrs 751
    Text: 144pin SDRAM SOD1MM KMM466S203CT KMM466S203CT SDRAM SODIMM 2Mx64 SDRAM SODIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S203CT is a 2M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM466S203CT KMM466S203CT 144pin 2Mx64 400mil 144-pin 870Q mrs 751 PDF

    KMM366S403CT-GL

    Abstract: No abstract text available
    Text: KMM366S403CT PC100 SDRAM MODULE KMM366S403CT SDRAM DIMM 4Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S403CT is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM366S403CT KMM366S403CT PC100 4Mx64 400mil 168-pin KMM366S403CT-GL PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM366S403CTL PC66 SDR AM M O D U L E Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp, level are changed as below : -Input leakage currents (Inputs): ±5uA to ±1uA. -Input leakage currents (I/O ): ±5uA to ±1.5uA.


    OCR Scan     		KMM366S403CTL 200mV. 4Mx64 KMM366S403CTL 150Max KM48S2020CT PDF