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KM416S4031BT-G8 Abstract: No abstract text available Text: KM416S4031B CMOS SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION •JEDEC standard 3.3V power supply •SSTL_3 Class II compatible with multiplexed address •Four banks operation •MRS cycle with address key programs	Original	KM416S4031B 16Bit KM416S4031B A10/AP KM416S4031BT-G8	PDF
KM416S4031BT-G8 Abstract: KM416S4031BT-G7 Text: Preliminary CMOS SDRAM KM416S4031B 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • SSTL_3 Class II compatible with multiplexed address • Four banks operation • MRS cycle with address key programs	Original	KM416S4031B 16Bit KM416S4031B KM416S4031BT-G8 KM416S4031BT-G7	PDF
km416s4031ct-g Abstract: No abstract text available Text: Preliminary CMOS SDRAM KM416S4031C 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • SSTL_3 Class II compatible with multiplexed address • Four banks operation • MRS cycle with address key programs	Original	KM416S4031C 16Bit KM416S4031C A10/AP km416s4031ct-g	PDF
KM416S4031C Abstract: 1M x 16Bit x 4 Banks Synchronous DRAM km416s4031ct-g Text: Preliminary CMOS SDRAM KM416S4031C 1M x 16Bit x 4 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • SSTL_3 Class II compatible with multiplexed address • Four banks operation • MRS cycle with address key programs	Original	KM416S4031C 16Bit KM416S4031C A10/AP 1M x 16Bit x 4 Banks Synchronous DRAM km416s4031ct-g	PDF
Untitled Abstract: No abstract text available Text: KM416S4031B CMOS SDRAM 1M X 16Bit X 4 Banks Synchronous DRAM with SSTL interface GENERAL DESCRIPTION FEATURES T he KM 416S4031B is 67,108,864 bits synchronous high data •JE D E C standard 3.3V power supply rate Dynam ic RAM organized as 4 x 1,048,576 w ords by 16	OCR Scan	KM416S4031B 16Bit 416S4031BT-G 416S4031B 10/AP	PDF
KM416S4031BT-GS Abstract: KM416S4031 KM416S4031BT-G8 Text: Preliminary KM416S4031B CMOS SDRAM 1M X 16Bit X 4 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION • • • • The KM416S4031B is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS	OCR Scan	KM416S4031B 16Bit KM416S4031B 10/AP KM416S4031BT-GS KM416S4031 KM416S4031BT-G8	PDF
km48s2020ct Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030 Text: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks	OCR Scan	KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT KM44S16020BT KM48S8020BT KM416S4020BT KM416S4021BT KM44S160308T KM48S8030BT S823B 4MX16 54-PIN u108h KM48S2020 44s16030	PDF
Untitled Abstract: No abstract text available Text: Preliminary KM416S4031C CMOS SDRAM 1M x 16Bitx 4 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION • • • • The KM416S4031C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS	OCR Scan	KM416S4031C 16Bitx KM416S4031C 10/AP	PDF
KMM366S424BTL-G0 Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT Text: TABLE OF CONTENTS \| I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .	OCR Scan	KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT 1Mx16 KM44S16020BT KM48S8020BT KM416S4020BT ------------------------------------16Mx4 4Mx64 KMM366S424BTL-G0 KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT	PDF