Untitled
Abstract: No abstract text available
Text: KM416S1020BT-G10T 1/2 IL08 C-MOS 16 M (1,048,576 x 16)-BIT SYNCHRONOUS DRAM —TOP VIEW— 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 VDD GND GND GND VDD VDD GND GND VDD VDD NC NC VDD INPUT A0 -A10 A11 : : : CAS CKE : CLK : : CS LDQM, UDQM :
|
Original
|
KM416S1020BT-G10T
|
PDF
|
eeprom programmer schematic 24c08
Abstract: motorola TP230 eeprom programmer schematic 24c02 transistor C458 C458 datasheet GMC21X7R104K50NT philips c399 RM10F1000CT IC 24c08 transistor c331
Text: Preliminary ThunderSWITCH 8/3 Schematics Description and Schematics Reference Guide: SPWA023 Networking Business Unit Revision 0.2 April 1998 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or
|
Original
|
SPWA023
1000PF
DS0026-001
eeprom programmer schematic 24c08
motorola TP230
eeprom programmer schematic 24c02
transistor C458
C458 datasheet
GMC21X7R104K50NT
philips c399
RM10F1000CT
IC 24c08
transistor c331
|
PDF
|
MT48LC2M8A1-8B
Abstract: 1F27FC04
Text: Freescale Semiconductor Application Note AN2066/D Rev. 1.5, 11/2001 MPC8xx SDRAM Interface Freescale Semiconductor, Inc. Heinz Wrobel Freescale GmbH, Munich Janet Snyder NCSD Applications, Austin Part I Introduction In the long term, Synchronous DRAMs SDRAM offer system designers at least two
|
Original
|
AN2066/D
MT48LC2M8A1-8B
1F27FC04
|
PDF
|
74FCT164245
Abstract: ba21 29F040J 74HC125 dip XC488CT-ND BA20 MICTOR-38 10UF 1N4148 MPC860
Text: * MPC860 Reference Design Board SAMBA Release Guide * RELEASE: 0.3 DATE: 5/18/98 [CONTENTS] - Introduction Tools Used
|
Original
|
MPC860
10/100BaseT
MPC860T)
74FCT164245
ba21
29F040J
74HC125 dip
XC488CT-ND
BA20
MICTOR-38
10UF
1N4148
|
PDF
|
PQ-33
Abstract: PQ-12 PQ-31 E1BBBC04
Text: MOTOROLA SEMICONDUCTOR DESIGN CONCEPT DC-11/10/98 - REV 1.0 MPC8xx SDRAM Interface Heinz Wrobel Motorola GmbH, Munich Janet Snyder, Spencer Jackson Motorola NetComm, Austin Gordon Lawton Motorola Ltd., East Kilbride 1. Introduction In the long term, Synchronous DRAMs SDRAM offer system designers at least two advantages over
|
Original
|
DC--11/10/98
PQ-33
PQ-12
PQ-31
E1BBBC04
|
PDF
|
transistor C458
Abstract: C458 datasheet CONN PCB 17x2 TCSCN KM416S4030A motorola TP230 6-pin supply ic tp35 TP147 MC74HCT164 C458
Text: Preliminary ThunderSWITCH 16/3 Schematic Description and Schematics REFERENCE GUIDE: SPWA022 Networking Business Unit Revision 0.2 Schematics April 1998 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or
|
Original
|
SPWA022
1000PF
DS0026-001
transistor C458
C458 datasheet
CONN PCB 17x2
TCSCN
KM416S4030A
motorola TP230
6-pin supply ic tp35
TP147
MC74HCT164
C458
|
PDF
|
Genesis Gmz1
Abstract: gmz2 LCD toshiba projector FSD21 gmz1 lcd 2x16 green MARKING toshiba 133 mitsubishi fsd5 TDA8752 IBM0316169
Text: Data Sheet gmFC1 DAT-0005-D November 1998 Genesis Microchip Inc. 200 Town Centre Blvd, Suite 400, Markham, ON Canada L3R 8G5 Tel: 905 470-2742 Fax: (905) 470-9022 2071 Landings Drive, Mountain View, CA, USA 94043 Tel: (650) 428-4277 Fax (650) 428-4288 www.genesis-video.com / [email protected]
|
Original
|
DAT-0005-D
DAT-0005
MSD-0025-A
MSD0038
E04-0005,
E05-0005
Genesis Gmz1
gmz2
LCD toshiba projector
FSD21
gmz1
lcd 2x16 green
MARKING toshiba 133
mitsubishi fsd5
TDA8752
IBM0316169
|
PDF
|
transistor C458
Abstract: C458 datasheet motorola TP230 tp394 transistor c331 TP182 C337 W 61 transistor C368 L934EB/2GD CC0805HX7R104K
Text: Preliminary ThunderSWITCH 12/3 Schematics Description and Schematics REFERENCE GUIDE: SPWA021 Networking Business Unit Revision 0.2 April 1998 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or
|
Original
|
SPWA021
1000PF
DS0026-001
transistor C458
C458 datasheet
motorola TP230
tp394
transistor c331
TP182
C337 W 61
transistor C368
L934EB/2GD
CC0805HX7R104K
|
PDF
|
UM62256EM-70LL
Abstract: UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723
Text: Cross Reference Your Memory Provider Partnumber Brand µPD4218165 NEC µPD4218165 NEC µPD424260 NEC µPD431000A NEC µPD43256B NEC µPD43256B-B NEC µPD43256BGU-70LL NEC µPD43256BGW-70 NEC µPD441000L-B NEC µPD442000L-B NEC µPD442012L-XB NEC µPD444012L-B
|
Original
|
PD4218165
PD424260
PD431000A
PD43256B
PD43256B-B
PD43256BGU-70LL
PD43256BGW-70
PD441000L-B
PD442000L-B
UM62256EM-70LL
UM611024
UM62256EM
KM416S1020BTG10
AS4C256K16FO-60JC
um62256e
M27c4000
KM416S1020BT-G10
HM62256 sram
ks0723
|
PDF
|
PM3206
Abstract: 8MB Micron SGRAM CAS 6-NP MT41LC256K32D4 pm3370 SAMSUNG MCP buffering MICRON mcp PM3380 PMC-970862
Text: PM3380/PM3370 PRELIMINARY APPLICATION NOTE PMC-980686 ISSUE 3 PM3380/PM3370 RAM CONFIGURATION APPLICATION NOTE PM3380/PM3370 RAM CONFIGURATION APPLICATION NOTE PRELIMINARY ISSUE 3: JANUARY 1999 i PM3380/PM3370 PRELIMINARY APPLICATION NOTE PMC-980686 ISSUE 3
|
Original
|
PM3380/PM3370
PMC-980686
PM3380/PM3370
PM-980686
PM3206
8MB Micron SGRAM
CAS 6-NP
MT41LC256K32D4
pm3370
SAMSUNG MCP
buffering
MICRON mcp
PM3380
PMC-970862
|
PDF
|
MT48LC2M8A1
Abstract: No abstract text available
Text: Application Note AN2066/D Rev. 1.5, 11/2001 MPC8xx SDRAM Interface Heinz Wrobel Motorola GmbH, Munich Janet Snyder NCSD Applications, Austin Part I Introduction In the long term, Synchronous DRAMs SDRAM offer system designers at least two advantages over conventional Fast Page Mode or EDO DRAMs: a speed-upgrade and density
|
Original
|
AN2066/D
MT48LC2M8A1
|
PDF
|
E1BBBC04
Abstract: MT48LC2M8A1-8 MT48LC2M8A1-8B 1F27FC04 KM416S1020B
Text: Freescale Semiconductor, Inc. Application Note AN2066/D Rev. 1.5, 11/2001 Freescale Semiconductor, Inc. MPC8xx SDRAM Interface Heinz Wrobel Motorola GmbH, Munich Janet Snyder NCSD Applications, Austin Part I Introduction In the long term, Synchronous DRAMs SDRAM offer system designers at least two
|
Original
|
AN2066/D
E1BBBC04
MT48LC2M8A1-8
MT48LC2M8A1-8B
1F27FC04
KM416S1020B
|
PDF
|
1F27FC04
Abstract: KM416S1020B MC68360 MPC860 MPC860T E1BBBC04
Text: MPC8XX to SDRAM Design Example Janet M. Snyder 06/07/1998 Introduction Use of SDRAMs in an MPC8XX design is often more than a system speed enhancement. With some designs, such as those using the MPC860T Fast Ethernet Controller PowerQUICC, full system operation
|
Original
|
MPC860T
100Mhz
50Mhz,
1FF5FC84
FFFFFC04
FFFFFC84
FFFFFC07
7FFFFC07
1F27FC04
KM416S1020B
MC68360
MPC860
E1BBBC04
|
PDF
|
transistor C458
Abstract: MC74HCT164 tp394 motorola TP230 74hc164 C458 datasheet diode c341 RCVN18 RJ45 jack 1X4 IC 24c08 data sheet
Text: Preliminary ThunderSWITCH 24/3 Schematic Description and Schematics REFERENCE GUIDE: SPWA019 Networking Business Unit Revision 0.61 March1998 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or
|
Original
|
SPWA019
March1998
1000PF
DS0026-001
transistor C458
MC74HCT164
tp394
motorola TP230
74hc164
C458 datasheet
diode c341
RCVN18
RJ45 jack 1X4
IC 24c08 data sheet
|
PDF
|
|
|
KM416S1020B
Abstract: QQ372G7
Text: KM416S1020B CMOS SDRAM 512K X 16Bit X 2 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION •• JEDEC standard 3.3V power supply The KM416S1020B is 16,777,216 bits synchronous high data - LVTTL compatible with multiplexed address rate Dynamic RAM organized as 2 x 524,288 words by 16 bits,
|
OCR Scan
|
KM416S1020B
16Bit
KM416S1020B
G037213
QQ372G7
|
PDF
|
CI373
Abstract: KMM366S104BTN-G2 kmm366s104
Text: KMM366S104BTN NEW JEDEC SDRAM MODULE KMM366S104BTN SDRAM DIMM 1Mx64 SDRAM DIMM based on 1Mx16, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1Q4BTN is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
|
OCR Scan
|
KMM366S104BTN
KMM366S104BTN
1Mx64
1Mx16,
KMM366S1Q4BTN
400mil
168-pin
CI373
KMM366S104BTN-G2
kmm366s104
|
PDF
|
KMM466S104BT-F0
Abstract: No abstract text available
Text: KMM466S104BT NEW JEDEC SDRAM MODULE KMM466S104BT SDRAM SODIMM 1 M x64 SDRAM SO DIM M based on 1 M x16, 4K Refresh, 3.3V S ynchronous DR AM s with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S104BT is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
|
OCR Scan
|
KMM466S104BT
KMM466S104BT
400mil
144-pin
1Mx16
KMM466S104BT-F0
|
PDF
|
KMM366S204BTN-G0
Abstract: KMM366S204BTN-G2 cdq40 KMM366S204BTN
Text: KMM366S204BTN NEW JEDEC SDRAM MODULE KMM366S204BTN SDRAM DIMM 2Mx64 SDRAM DIMM based on 1Mx16, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S204BTN is a 2M bit x 64 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung
|
OCR Scan
|
KMM366S204BTN
KMM366S204BTN
2Mx64
1Mx16,
400mil
168-pin
KMM366S204BTN-G8
KMM366S204BTN-G0
KMM366S204BTN-G2
cdq40
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KMM466S204BT NEW JEDEC SDRAM MODULE KMM466S204BT SDRAM SODIMM 2Mx64 SDRAM SODIMM based on 1 Mx16, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S204BT is a 2M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
|
OCR Scan
|
KMM466S204BT
KMM466S204BT
2Mx64
400mil
144-pin
|
PDF
|
SDRAM 1996
Abstract: No abstract text available
Text: KM416S1021BT SDRAM ELECTRO NICS 512K x 16Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.
|
OCR Scan
|
KM416S1021BT
16Bit
KM416S1020B/KM416S1021B
hig1996
003300fci
50-TSOP2-400F
50-TSOP2-400R
D03b2b2
SDRAM 1996
|
PDF
|
