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    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC h ?E KM416C157A ]> • 7Tb4142 0015^21 400 ■■ S M G K CMOS DRAM 256K x1 6 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C157A is a CMOS high speed 262,144 b itx 1 6 Dynamic Random Access Memory. It's


    OCR Scan     		PDF KM416C157A 7Tb4142 KM416C157A 0015R41 40-LEAD

    41C16100

    Abstract: 24-PIN 41C16000
    Text: MEMORY ICs D yn am ic R A M Capacity Continued Part Number 16M i FUNCTION GUIDE Organization Speed(ns) Features Technology Packages Remark * KM418V256ALLT 256K X 1B 70/80 CMOS Fast Page(3.3V) 40 Pin TSOP-ll(Forward) Now * KM418V256ALLTR 256K X 18 70/80 CMOS


    OCR Scan     		PDF KM418V256ALLT KM418V256ALLTR KM416C157AJ KM416C157AZ KM416C157AT KM416C157ATR 416C157ALZ KM416C157ALT KM416C157ALTR KM416C157ALLZ 41C16100 24-PIN 41C16000

    Zd 607 MA

    Abstract: N6AZ
    Text: KM416C157A CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: *RAC *CAC *RC KM416C157 A-6 60ns 15ns 110ns KM416C157A-7 70ns 20ns 130ns KM416C157A-8 80ns 20ns 150ns • Fast Page Mode operation • Byte Witte operation


    OCR Scan     		PDF KM416C157A KM416C157 KM416C157A-7 KM416C157A-8 110ns 130ns 150ns KM416C157A 416C157A Zd 607 MA N6AZ