Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E » • DG17D77 GTD ■ SriGK PRELIMINARY 7^4142 KM23V16100A CMOS MASK ROM 16M-Bit 2M x8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152X 8 bit organization • Fast access tim e: 200ns(max.) • Supply voltage: single+3V or +3.3V
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DG17D77
KM23V16100A
16M-Bit
200ns
36-pin,
KM23V16100A
KM23V16100A)
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM23V16100A CMOS MASK ROM 16M-Bit 2M x8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152x8 bit organization • Fast access time : 200ns(max.) • Supply voltage : single+3V or +3.3V • Current consumption Operating : 25 mA(max.) at VCC=3.0V± 0.3
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KM23V16100A
16M-Bit
152x8
200ns
36-pin,
600mil,
KM23V16100A
KM23V16100A-25
KM23V16100A-30
KM23V161OOA
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al 232 nec
Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258
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KM41C256
KM41C257
KM41C258
KM41C464
KM41C466
KM41C1000
KM41C1001
KM41C1002
KM44C256
KM44C258
al 232 nec
TC55B4257
MB832001
NM9306
eeprom Cross Reference
D41264
TC5116100
HN28C256
NM9307
oki cross reference
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KM23C8001
Abstract: 32-sop
Text: MEMORY ICs FUNCTION GUIDE 2.6 MASK ROM Capacity Part Number Orgrization Speed ns Tech. Features Package Remark 256K KM23C256(G) 32Kx8 120/150/200 CMOS Programmable C E & OE 28DIP(32SOP) Now 512K KM23C512(G) 6 4 K *8 120/150/200 CMOS Programmable C E & O E
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KM23C256
KM23C512
KC23C1000
KM23C1001
KM23C1010
KM23C1010J
KM23C1011
32Kx8
128Kx
256KX
KM23C8001
32-sop
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