Untitled
Abstract: No abstract text available
Text: SKM 300GB123D Absolute Maximum Ratings Symbol Conditions IGBT *7 &* &*; =7 .37;+.& @ . + + 6* 0511 Inverse diode SEMITRANSTM 3 IGBT Modules & &(; . 4 05 91 6* 4 / &( 4 /1 C AC .? 4 /51 6* 0$1 /91 <11 + + 0011 + :51 0:1 $11 + +
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300GB123D
300GAL123D
300GAR123D
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kl 05 diode
Abstract: HB77
Text: SKM 300GB123D Absolute Maximum Ratings Symbol Conditions IGBT *7 &* &*; =7 .37;+.& @ . + + 6* 0511 Inverse diode SEMITRANSTM 3 IGBT Modules & &(; . 4 05 91 6* . 4 05 91 6* 4 / &( 4 /1 C AC .? 4 /51 6* 0$1 /91 $11 <<1 + + 0011
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300GB123D
300GB123D
300GAL123D
300GAR123D
kl 05 diode
HB77
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Untitled
Abstract: No abstract text available
Text: SKM 300GB123D Absolute Maximum Ratings Symbol Conditions IGBT *7 &* &*; =7 .37;+.& @ . + + 6* 0511 Inverse diode SEMITRANSTM 3 IGBT Modules & &(; . 4 05 91 6* 4 / &( 4 /1 C AC .? 4 /51 6* 0$1 /91 <11 + + 0011 + :51 0:1 $11 + +
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300GB123D
300GAL123D
300GAR123D
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SKM300GB123D
Abstract: No abstract text available
Text: SKM 300GB123D Absolute Maximum Ratings Symbol Conditions IGBT *7 &* &*; =7 .37;+.& @ . + + 6* 0511 Inverse diode SEMITRANSTM 3 IGBT Modules & &(; . 4 05 91 6* 4 / &( 4 /1 C AC .? 4 /51 6* 0$1 /91 <11 + + 0011 + :51 0:1 $11 + +
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300GB123D
300GAL123D
300GAR123D
SKM300GB123D
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Amplifier 1000w schematic diagrams
Abstract: 1000w audio amplifier circuit diagram 12v 1000W AUDIO AMPLIFIER CIRCUIT DIAGRAM 500w audio power amplifier circuit diagram 1000w power amplifier circuit diagram 500w audio amplifier circuit diagram 1000W MOSFET Audio Amplifier Circuit 1000w Mosfet Power Audio Amplifier circuit Diagram 12v 1000W AUDIO AMPLIFIER 1000W power amplifier schematic diagrams
Text: Tri path Technol og y, I nc. - Techni cal I nformati on RB-TDA2500-1 CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information Rev. 1.0 May 2005 GENERAL DESCRIPTION The RB-TDA2500 reference board is based on the TDA2500 digital audio power amplifier driver from
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RB-TDA2500-1
RB-TDA2500
TDA2500
/-60V
/-93V
RB-TDA2500-1:
short34NB20
Amplifier 1000w schematic diagrams
1000w audio amplifier circuit diagram
12v 1000W AUDIO AMPLIFIER CIRCUIT DIAGRAM
500w audio power amplifier circuit diagram
1000w power amplifier circuit diagram
500w audio amplifier circuit diagram
1000W MOSFET Audio Amplifier Circuit
1000w Mosfet Power Audio Amplifier circuit Diagram
12v 1000W AUDIO AMPLIFIER
1000W power amplifier schematic diagrams
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Untitled
Abstract: No abstract text available
Text: SKiM 601GD126DM power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT . / 78 ./( ; $ % SKiM 5 SKiM 601GD126DM
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601GD126DM
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Untitled
Abstract: No abstract text available
Text: SEMiX 352GB128Ds Absolute Maximum Ratings Symbol Conditions IGBT - -34 6 "8* ' /, ! + 9 3$-9: ; Values Units +', 01, '2, 5, 7 ', 5, <<< = +(, +'( $ $ ) 5, '1, +/, 5, $ $ +2, $ $* + < Inverse diode
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352GB128Ds
352GAL128Ds
352GAR128Ds
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Untitled
Abstract: No abstract text available
Text: SKNa 202 Stud Diode Avalanche Diode SKNa 202 8OP2Q:1 ?N2B@ S 677 $ O:&=1:5: %&'5+ K3/ 3(,1(5350 3.+/&,13(Q F:&= 2:1( 8 [D77 ]777 ]T77 ]677 ]D77 ]V77 ?N$8 S T77 $ O01(U CV7W >) S V7 XFQ @HI& T7T¥[D @HI& T7T¥]7 @HI& T7T¥]T @HI& T7T¥]6 @HI& T7T¥]D @HI& T7T¥]V
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OC77Q
7E66W
7E66NW
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LM 364 pn
Abstract: No abstract text available
Text: LED HIGH POWER M08 Product Series LED HIGH POWER M08 CoB Product Data Sheet Created Date: 08 / 22 / 2013 Revision: 5.0, 03 /25 / 2014 1 BNC-OD-C131/A4 Created Date : 05/26/2007 Revison : 1.01, 05/26/2008 LED HIGH POWER M08 Product Series 1. Description The LiteON CoB Product series is a revolutionary, energy efficient and ultra-compact new light source, combining the
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BNC-OD-C131/A4
LM 364 pn
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phillips zener
Abstract: Leach relay M83536
Text: SERIES KL ENGINEERING DATA SHEET RELAY - LATCH 4 PDT, 12 AMP Magnetic latch operation All welded construction Contact arrangement 4 PDT Qualified at 10Amps to MIL-PRF-83536 PRINCIPLE TECHNICAL CHARACTERISTICS Contacts rated at 28 Vdc; 115 Vac, 400 Hz, and
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10Amps
MIL-PRF-83536
156lb
SO-1056-8691
phillips zener
Leach relay M83536
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Untitled
Abstract: No abstract text available
Text: SERIES KL ENGINEERING DATA SHEET RELAY - LATCH 4 PDT, 12 AMP Magnetic latch operation All welded construction Contact arrangement 4 PDT Qualified at 10Amps to MIL-PRF-83536 PRINCIPLE TECHNICAL CHARACTERISTICS Contacts rated at 28 Vdc; 115 Vac, 400 Hz, and
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10Amps
MIL-PRF-83536
SO-1056-8691
156lb
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Untitled
Abstract: No abstract text available
Text: LED HIGH POWER M07 Product Series LED HIGH POWER M07 CoB Product Series Data Sheet Created Date: 10 / 30 / 2013 Revision: 1.0, 12 / 10 / 2013 1 BNC-OD-C131/A4 Created Date : 05/26/2007 Revison : 1.01, 05/26/2008 LED HIGH POWER M07 Product Series 1. Description
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Untitled
Abstract: No abstract text available
Text: & «cc M OTOROLA ^ ^ ^ ^ SN54LS00 SN74LS00 ^ ra rn Fl Fl RI FI Fl Q U AD 2-IN P U T N A N D GATE LOW POWER SCHOTTKY vÙ ^ klü 'iiJ^ jd A ^ iJ Ll I J Suffix — Case 632-07 {Ceramic N Suffix — Case 646-05 (Plastic) GUARANTEED OPERATING RANGES SYMBOL PARAMETER
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SN54LS00
SN74LS00
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smd diode schottky code marking 2U
Abstract: smd diode marking 2U smd diode marking codes 2U 2U marking code diode smd smd diode marking A3 sot23 MV smd marking code SOT23 sot143 marking code A3 smd diode code marking 2U marking l4 sot-23 SMD DIODE 2U
Text: SMD SCHOTTKY DIODES DESCRIPTION • Philips Components Schottky barrier diodes are metal junction devices which combine the attributes of low forward voltage drop with fast switching times. Specific applications include battery back-up circuits, overshoot/
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OT-23
OT-143
ODBAT54C
BAT54S
BAT74
PMBD101
PMBD352
PMBD353
PRLL5817
PRLL5818
smd diode schottky code marking 2U
smd diode marking 2U
smd diode marking codes 2U
2U marking code diode smd
smd diode marking A3 sot23
MV smd marking code SOT23
sot143 marking code A3
smd diode code marking 2U
marking l4 sot-23
SMD DIODE 2U
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6122G0
Abstract: NEC PD6121 455b kl diode 03 IC-6316B mpd 6120
Text: MOS INTEGRATED CIRCUIT M P D 6 1 2 2 M U L T I-P U R P O S E R E M O T E C O N T R O L T R A N S M IT T E R 1C C M O S LSI DESCRIPTION The //PD6122 is an infrared remote control transmitter LSI for T V , V CR , stereo components, cassette decks, air con
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uPD6122
IR30-00
VP15-00
WS60-00
b427525
6122G0
NEC PD6121
455b
kl diode 03
IC-6316B
mpd 6120
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D405N
Abstract: AEG T 51 N 1200 AEG D 251 N 1200 D24NR d629n aeg tt 18 n 1200 BYY 56 aeg tt 46 n 1200 D 4409 N 200 AEG T 670 N 2200
Text: 1 7E D • GDSTMSb G 0 D 1 3 2 T ö ■ T - O l- O l Leistungsdioden Power diodes Diodes de puissance Typ Ifrmsm Vrrm Type V' A Ifsm t-10nns M= Wjmax 45°C t-10nns M“ Wjmax 45°C kA kA A s A*s Ifavm/*c IpAVM A/°C tA=45*C 120°el. rec. A V TO tA =35aC
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G0D132T
t-10r
BYY57/
BYY58/
20x20
100x125
D24NR
41/mln.
D3507N
D405N
AEG T 51 N 1200
AEG D 251 N 1200
d629n
aeg tt 18 n 1200
BYY 56
aeg tt 46 n 1200
D 4409 N 200
AEG T 670 N 2200
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Sj 33 diode
Abstract: No abstract text available
Text: T O SH IB A 1 SV 217 TO SHIBA VAR IABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 1 7 C ATV TUN IN G . U nit in mm • High Capacitance Ratio : C 2 V / C 25 V = 12.5 Typ. • Excellent C-V Characteristics, and Small Tracking Error. 0.2 + 1.25 - 0.
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bzx 79 6v2
Abstract: zener BZX 4v7 BZX 6v3 zener BZX 5V1 25CC zener BZX 3V6 zener BZX 79 4v7 79C5V6 bzx79 79C2V7
Text: SbE D • 7^2^237 OOMlSfll ôbO ■ S G T H £jï T -u ~ a S G S-THOMSON ZENER DIODES ■ VOLTAGE RANGE : 2.4V TO 100V ■ DOUBLE SLUG TYPE CONSTRUCTION ■ PRO ELECTRON REGISTRATION 2.4V TO 100V ■ CECC FOR TYPES : 2.7V TO 62V LEVEL QUALITY ASSESSM ENT : L
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300ns
7T2T23?
DD41Sfl3
bzx 79 6v2
zener BZX 4v7
BZX 6v3
zener BZX 5V1
25CC
zener BZX 3V6
zener BZX 79 4v7
79C5V6
bzx79
79C2V7
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3C91C
Abstract: 3C92C 3C91 optocoupler telefunken 3C91 u 110 telefunken 3c92 3C91 1c92 3C91C telefunken
Text: T p lu I p 3C91C/3C92C S e m i c o n d u c t o r s Optocoupler with Phototransistor Output Description The 3C91C/ 3C92C consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead hermetically sealed metal can.
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3c91c/
3c92c
3C91C
10-Dec-96
Parameters92
3C91 optocoupler
telefunken 3C91
u 110 telefunken
3c92
3C91
1c92
3C91C telefunken
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Untitled
Abstract: No abstract text available
Text: 1SV214 TO SHIBA 1 SV2 1 4 TOSHIBA VARIABLE CAPACITANCE DIODE TV TUNING. . • • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C2V/C25V = 6.5 Typ. Low Series Resistance : rs = 0.4(1 (Typ.) Excellent C-V Characteristics, and Small Tracking Error.
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1SV214
C2V/C25V
ij------X100
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2SK2385
Abstract: S2510
Text: TOSHIBA 2SK2385 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2385 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 r 4V Gate Drive
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2SK2385
S2510
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1SV149
Abstract: No abstract text available
Text: 1SV 149 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 49 Unit in mm AM RADIO BAND TUNING APPLICATIONS. • • • • High Capacitance Ratio : C iy /C g y = 15 Min. High Q : Q = 200 (Min.) Small Package Low Voltage Operation : 1V-8V
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1SV149
1SV149
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BTY230
Abstract: a2kl
Text: r z 7 SGS-THOMSON BYT230PI V -800 BYT231 PI(V)-800 FAST RECOVERY RECTIFIER DIODES FEATURES • ■ ■ ■ VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE : Insulating voltage = 2500 Vrms Capacitance = 45 pF
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BYT230PI
BYT231
BTY231
BTY230PI
00b032b
BTY230
a2kl
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿ ¿ P D 6 3 , 6 3 A , 6 4 4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION DESCRIPTION Equipped w ith low -voltage 1.8 V operation, a carrier generation circu it for infrared rem ote control transm ission,
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PD63A:
16-bit
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