marking kje
Abstract: "Marking code" KJE SOT-23 Diode bav99 kje KJE BAV99 BAV99 application KJE SOT23 BAV99-7-F Diode bav99 std transistor kje KJE transistor
Text: BAV99 DUAL SURFACE MOUNT SWITCHING DIODE Please click here to visit our online spice models database. Features • • • • • • Mechanical Data • • Fast Switching Speed Surface Mount Package Ideally Suited for Automated Insertion For General Purpose Switching Applications
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BAV99
AEC-Q101
OT-23
J-STD-020D
MIL-STD-202,
DS12007
marking kje
"Marking code" KJE SOT-23
Diode bav99 kje
KJE BAV99
BAV99 application
KJE SOT23
BAV99-7-F
Diode bav99
std transistor kje
KJE transistor
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ex marking code diodes
Abstract: SOT23 DIODE marking CODE Data BAV99 bav99 Date Code BAV99_Q
Text: BAV99 DUAL SURFACE MOUNT SWITCHING DIODE Features Mechanical Data • • • • • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automated Insertion For General Purpose Switching Applications Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2
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BAV99
AEC-Q101
J-STD-020
MIL-STD-202,
DS12007
ex marking code diodes
SOT23 DIODE marking CODE Data BAV99
bav99 Date Code
BAV99_Q
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Thomson-CSF POLYESTER capacitors
Abstract: Thomson-CSF POLYESTER capacitors TPC thomson film capacitors .22 uf 400 volt ac capacitor thyristor control arc welding rectifier circuit thyristor control spot welding circuit KJE transistor mil-m-24519 FAV36B0804K capacitor snubber Polypropylene 1 uf
Text: A KYOCERA GROUP COMPANY AVX Medium Power Film Capacitors For Power Applications Contents MEDIUM POWER FILM CAPACITORS DC FILTERING FFB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
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5M505-C
Thomson-CSF POLYESTER capacitors
Thomson-CSF POLYESTER capacitors TPC
thomson film capacitors
.22 uf 400 volt ac capacitor
thyristor control arc welding rectifier circuit
thyristor control spot welding circuit
KJE transistor
mil-m-24519
FAV36B0804K
capacitor snubber Polypropylene 1 uf
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Untitled
Abstract: No abstract text available
Text: _L r* O CD r* 11 0) i u 3 .5 , is r r . ] Ì i A : c^radI""2ark)'\ î f 0: & CD f ^ f ; S o oc BMW _ i— UJ CIRCUIT NÒ. ) £=Ü n in 3— ta S le 1 £Ä*Sr Kb— K 7“ ? MANUFACTURING TRADE MARK PLACE Xtt ~ B * -AMP OR AMP JAPAN & & A 2. 3. A t
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CFJQ0-291Q-951
FJ00-2910-95)
C-917697
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4.194304 crystal oscillator
Abstract: MSM5529 MSM5929 c 5929 MTPD3650D-1.4-DIG
Text: A K H iL i y / y semiconductor c MSM5529 4 DIGIT MULTIPLEXED VF AUTO CLOCK MSM5929 4 DIGIT MULTIPLEXED LED AUTO CLOCK GENERAL DESCRIPTION FEATURES • .C M O S — low po«ve< dissipation The M SM5S29 and M SM 5929 are m onolithic, m etal-oate CM O S integrated circ u its that drrve m ultiplexed 4-dig it vacuum -fluorescent
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MSM5529
MSM5929
SM5S29
MSMS529.
MSM5529
1978O
4.194304 crystal oscillator
c 5929
MTPD3650D-1.4-DIG
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Untitled
Abstract: No abstract text available
Text: 4 3 i 1 CO CM rr- CD i o 8 . 3 MAX. co i/ S y n - T - r y ? * 6 $ 1 5 .3 Í i i f ' m 1 1 TTT' «4 - - i « « a \ 1 3 = - —ö = — - d c r j- - 1 c . ='•■ * LU SMMttfM-JÍ FIG. 1
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L94v-o)
C-917726
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KJE transistor
Abstract: No abstract text available
Text: 32E D • flS3b3EG DOlb^S 4 « S I P NPN Silicon RF Transistor 3 1 -^ 3 SIEMENS/ SPCLi SEMICONDS T ' BFQ 19S _ • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 to 70 mA.
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OT-89
023b32G
KJE transistor
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Untitled
Abstract: No abstract text available
Text: BAV99 vtsM A Y ▼ Vishay Telefunken Dual Surface Mount Switching Diode Features • Fast sw itching speed • High conductance • Surface m ount package autom atic insertion • C onnected in series ideally suited for 94 8550 Absolute Maximum Ratings Tj = 25°C
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BAV99
D-74025
17-Mar-99
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ts0524lb
Abstract: ts0524 TS0524LB-X SMU FM IC TS-0524
Text: P r o d u c t U p d a t e F i l e Permeability Sensing Type / Piezoelectric Type Toner-Concentration and Toner-Level Sensors jfiJSRoHSJB^ S Îtë Z R o H S ifr$ -:£ â M a fi EU D ire c tiv e 2 0 0 2/95 /E C , T S J S P s . e a*ä6M Ä-ff!iKi* awaE(PBB «)iiaraE«(PBDE).
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2002/95/EC,
0to50oC
ts0524lb
ts0524
TS0524LB-X
SMU FM IC
TS-0524
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2SD627
Abstract: TI15J 2sb644
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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LM124J
Abstract: LM2902 LM124 T-11213 THOMSON LM2902 ic lm324 lm324 schematic diagram LM224 LM324 A-LM2902
Text: 7=52^237 ^ r z z 7 # S C S - T H O 00230b0 M S O ö • N L M K a n e B @ iiiL ii( B T O B ie 8 S G S-THOMSON 1 2 4 , A - L M L M 2 2 4 , A 3 2 4 . A - L M 2 9 0 2 3QE D LOW POWER QUAD OPERATIONAL AMPLIFIERS LARGE VOLTAGE GAIN : 100 dB VERY LOW SUPPLY CURRENT/AMPLI
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00230b0
LM124,
-LM224,
LM324
-LM2902
DIP14
CERDIP14
LCC20
-LM224
LM124J
LM2902
LM124
T-11213
THOMSON LM2902
ic lm324
lm324 schematic diagram
LM224
A-LM2902
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5AW transistor
Abstract: 2SA80 2SA807 2SA81 2SA814 2SA815 2SA817 2SC1601
Text: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English
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2SA814
2SA815
2SA81Ã
2SA817
2SA81&
100MHz)
5AW transistor
2SA80
2SA807
2SA81
2SA814
2SC1601
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ZTR 200
Abstract: 1602G SFF1601G SFF1608G
Text: TAIWAN SEMICONDUCTOR iS SFF1601G - SFF1608G Isolated 16.0 AMPS. Glass Passivated Super Fast Rectifiers ¡0 RoHS C O M P L IA N C E IT-Q-220AB .Ch. Features <• ■y❖ ❖ •fr H ig h e ffic ie n c y ; lo w V F H ig h c u rre n t c a p e b ility H ig h re lia b ility
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SFF1601G
SFF1608G
ITO-22QAB
ITO-22DAB
MIL-STD-202,
JC/10
SFF1608G)
ZTR 200
1602G
SFF1608G
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ram 256x8
Abstract: N8X350 8X350 8X300 N8X350F 8X305 S8X350 SC10 8x300 Signetics Application Notes sc1012
Text: MAY 1982 BIPOLAR MEMORY DIVISION 2048-BIT BIPOLAR RAM 256 X 8 DESCRIPTION 8X350 (T.S.) TYPICAL I/O STRUCTURE PIN CONFIGURATION The 8X350 bipolar RAM is designed p rinci p ally as a w orking sto ra g e elem ent in an 8X300 based system . Internal circuitry is
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2048-BIT
256x8)
8X350
8X350
8X300
8X300,
N8X350-F,
S8X350-F.
ram 256x8
N8X350
N8X350F
8X305
S8X350
SC10
8x300 Signetics Application Notes
sc1012
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Untitled
Abstract: No abstract text available
Text: 8-Bit Buffers Features/B enefits • Three-state outputs drive bus lines SN54LS240 SN54S240 SN54LS241 SN54S241 SN54LS244 SNS4S244 Ordering Inform ation • Low current PNP inputs reduce loading PART NUMBER PKG • 8-bit data path matches byte boundaries SN54LS240
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SN54LS240
SN54S240
SN54LS241
SN54S241
SN54LS244
SNS4S244
SN54LS240
SN54LS241
SN54LS244
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C254A
Abstract: LU68C254A
Text: ¡ 1 1 * |C W 0 R K S LU68C254A 32K X 8 Low Voltage CMOS Static RAM PRELIMINARY, JANUARY 1995 FEATURES FUNCTIONAL DESCRIPTION • T h e UJ68C254A is a general p u rp o s e low p o w e r a n d low voltage op eratin g Static R an d o m Access M em ory fabricated u sin g IC W O RK S' ad v an ced
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LU68C254A
UJ68C254A
ID68C254A
120ns/150ns
68C254A/0
C254A
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BCY77
Abstract: BCY79 BCY 791x zr 4.7v bcy 78 Q62702-C327 BCY78 Q62702-C327-V1 Transistor 78 L 05 1Zv transistor
Text: BCY77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY 77, BCY 78 and BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 TO-18 . The collector is electrically connected to the case. The transistors are of particular use in low-noise AF pre- and driver stages as well as in
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BCY77,
BCY79
BCY78
Q62702-C327-V1
Q62702-C
327-V2
327-V3
Q60203-Y78-G
BCY77
BCY79
BCY 791x
zr 4.7v
bcy 78
Q62702-C327
Q62702-C327-V1
Transistor 78 L 05
1Zv transistor
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12L10
Abstract: PLD20G 20G10B-20 16L6 18L4 20L10 20L8 CG7C323B-A15HC J-64
Text: C Y P R ES S SEMI CONDUCTOR 4bE T> 2 5 0 ^ 2 QQOb^ab T QCYP PLDC20G10B/PLDC20G10 ir - - - ~— CMOS Generic 2 4 ^ n Reprogrammable Logic Device SEMICONDUCTOR Features • Fast — Commercial: tpo = IS ns, tco = 1 ns, ts = 12 ns — Military: tpo = 20 ns, tco ~ 15 os,
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PLDC20G10B/PLDC20G10
24-Pin
20L10,
12L10
PLDC20G10-35HC
CG7C323â
A35JC/JS12!
CG7C323-A35HC
PLDC20G10-40DMB
PLDC20G10-40LMB
PLD20G
20G10B-20
16L6
18L4
20L10
20L8
CG7C323B-A15HC
J-64
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N8X3
Abstract: No abstract text available
Text: Signetics 8X360 Memory Address Director MAD Product Specification Microprocessor Products DESCRIPTION FEATURES The 8X360 Memory Address Director (MAD) (Figure 1), is a high-speed, per formance oriented peripheral. The 8X360 reduces bookkeeping and soft
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8X360
8X360
8X305
6X360
8X360.
N8X3
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AM29F040B
Abstract: No abstract text available
Text: PRFLifVliNApv AM D il Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.35nm process technology
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Am29F040B
Am29F040
AM29F040B
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Untitled
Abstract: No abstract text available
Text: NJ U 6 4 3 6 PRELIMINARY 1/4 DUTY LCD D R I V E R W I T H GENERAL DESCRIPTION The NJU6436 is a 1/4 duty LCD driver for segment type LCD panel with key scanning, Ir receiving and LED driv ing function. The LCD driver consists of 4-common and 60-segnent drives up to 240 segments and LED driver drives 1 LED
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NJU6436
60-segnent
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC58257AP/AF-20, -25 SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT CMOS ELECTRICALLY ERASABLE AND PROGRAMMABLE READ ONLY MEMORY Description Th e T C 5 8 2 5 7 A P /A F is a 3 2 ,7 6 8 w o rd x 8 bit electrically ch ip erasable p ro g ra m m a b le read only m e m o ry m o ld e d in a 2 8 -p in
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TC58257AP/AF-20,
8257A
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Untitled
Abstract: No abstract text available
Text: P R E L IM IN A R Y AMDH Am29LV116B 16 Megabit 2 M x 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
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Am29LV116B
Am29LVt16B
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LH536
Abstract: AS29X 29LV002-150 kje z1
Text: Preliminary information Features • O rg a n iz a tio n : 2 5 6 K X 8 • S ecto r a rc h ite c tu re - O ne 16K; tw o 8K; one 32K; and three 64K byte sectors - Boot code sector architecture— T top or B (bottom ) - Erase any com bination o f sectors or full chip
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AS29LV
002T-100PI
002B-100LI
AS29LVQQ2T-I0QLI
32-pin
02T-80PC
AS29LV002B-80LC
S29IV
LH536
AS29X
29LV002-150
kje z1
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