KHB9D0N50F1
Abstract: KHB9D0N50P1 HW150 ID9AJ
Text: SEMICONDUCTOR KHB9D0N50P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB9D0N50P1/F1
KHB9D0N50F1
KHB9D0N50P1
HW150
ID9AJ
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KHB9D0N50F1
Abstract: ID9AJ KHB9D0N50F2 KHB9D0N50P1 KHB9D0N50F
Text: SEMICONDUCTOR KHB9D0N50P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D0N50P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB9D0N50P1/F1/F2
KHB9D0N50P1
Fig15.
Fig16.
Fig17.
KHB9D0N50F1
ID9AJ
KHB9D0N50F2
KHB9D0N50P1
KHB9D0N50F
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KHB9D0N50F1
Abstract: KHB9D0N50P1 36 W ballast KHB9D0N50F
Text: SEMICONDUCTOR KHB9D0N50P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D0N50P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB9D0N50P1/F1/F2
KHB9D0N50P1
KHB9D0N50P1
dI/dt200A/,
KHB9D0N50F1
36 W ballast
KHB9D0N50F
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB9D0N50P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB9D0N50P1/F1/F2
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9D0N50P
Abstract: khb 9D0N50P 9D0N50 KHB9D0N50P1 we 501 DSA0010426
Text: SEMICONDUCTOR KHB9D0N50P1 MARKING SPECIFICATION TO-220AB PACKAGE 1. Marking method Laser Marking 2. Marking KHB 1 1 2 No. Item 9D0N50P 501 3 Marking Description KHB KHB 9D0N50P 9D0N50P Revision 1 1 Lot No. 501 Device Name 2006. 2. 6 Revision No : 0 5 Year
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KHB9D0N50P1
O-220AB
9D0N50P
220AB
9D0N50P
khb 9D0N50P
9D0N50
KHB9D0N50P1
we 501
DSA0010426
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KHB9D0N50F1
Abstract: KHB9D0N50P1 f936 KHB9D0N50F
Text: SEMICONDUCTOR KHB9D0N50P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D0N50P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB9D0N50P1/F1
KHB9D0N50P1
KHB9D0N50F1
KHB9D0N50P1
f936
KHB9D0N50F
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9n90c
Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W
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2N7000
2N7000A
2N7000K
70Max
45Max
55Max
80Max
9n90c
9n50c
IGBT 20N50
kmb*050n60p
7N65C
5n50c
smd diode S4 58a
2N60C
2N60 MOSFET SMPS
str TV SMPS
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KF5N50
Abstract: kf12n60 IC 1N4007 diode 400V 4A TO220IS 1N4007 diode bridge MB6S mje13005 DF06 IC kf13n50
Text: Package Line-up Outline Name ESM USM TSM SOT-23 FLP-8 DPAK FLP-14 Size[㎣] 1.65x0.85 2.0×1.25 2.9×1.6 2.93×1.3 4.85×3.94×1.6 6.6×6.1 8.66×3.94×1.63 Type No. Package MB6S / M VRRM MBS / M IF Type No. KTC3003 HV 0.5A 600V DF06(S) DF(S) 1N4007(G) DO-41
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OT-23
FLP-14
KTC3003
1N4007
DO-41
MJE13003
MJE13005
O-126
KF5N50
kf12n60
IC 1N4007
diode 400V 4A
TO220IS
1N4007 diode bridge
MB6S
DF06 IC
kf13n50
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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KHB9D0N50F1
Abstract: TJ-108 kq9n50p
Text: SEMICONDUCTOR KQ9N50P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description TENTATIVE This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KQ9N50P/F
KQ9N50P
Fig15.
Fig16.
Fig17.
KHB9D0N50F1
TJ-108
kq9n50p
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