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KHB4D5N60F2 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
KHB4D5N60F2		Korea Electronics	N CHANNEL MOS FIELD EFFECT TRANSISTOR		Original	PDF

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Catalog Datasheet	MFG & Type	PDF	Document Tags
4D5N60F Abstract: KHB 4D5N60F KHB4D5N60F 4d5n60 KHB4D5N60F2 Text: SEMICONDUCTOR KHB4D5N60F2 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking 1 KHB 4D5N60F 2 No. 2007. 5. 23 713 2 Item Marking Description Device Name KHB4D5N60F2 KHB4D5N60F2 Lot No. 713 Revision No : 0 7 Year 0~9 : 2000~2009	Original	PDF	KHB4D5N60F2 O-220IS 4D5N60F 4D5N60F KHB 4D5N60F KHB4D5N60F 4d5n60 KHB4D5N60F2
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original	PDF
KHB4D5N60F2 Abstract: KHB4D5N60F KHB4D5N60P Text: SEMICONDUCTOR KHB4D5N60P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D5N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode	Original	PDF	KHB4D5N60P/F/F2 KHB4D5N60P Fig15. Fig16. Fig17. KHB4D5N60F2 KHB4D5N60F KHB4D5N60P
KHB4D5N60F Abstract: KHB4D5N60F2 Text: SEMICONDUCTOR KHB4D5N60P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D5N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode	Original	PDF	KHB4D5N60P/F/F2 KHB4D5N60P Fig15. Fig16. Fig17. KHB4D5N60F KHB4D5N60F2
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR KHB4D5N60P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D5N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode	Original	PDF	KHB4D5N60P/F/F2 KHB4D5N60P Fig15. Fig16. Fig17.