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    KHB4D0N65P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KHB4D0N65P Korea Electronics N CHANNEL MOS FIELD EFFECT TRANSISTOR Original PDF

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    khb*4D0N65f

    Abstract: KHB4D0N65F2 KHB4D0N65F KHB4D0N65P
    Text: SEMICONDUCTOR KHB4D0N65P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N65P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power


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    PDF KHB4D0N65P/F/F2 KHB4D0N65P Fig15. Fig16. Fig17. khb*4D0N65f KHB4D0N65F2 KHB4D0N65F KHB4D0N65P

    khb*4D0N65f

    Abstract: KHB4D0N65F
    Text: SEMICONDUCTOR KHB4D0N65P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N65P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power


    Original
    PDF KHB4D0N65P/F KHB4D0N65P khb*4D0N65f KHB4D0N65F

    KHB4D0N65F

    Abstract: KHB4D0N65P khb*4D0N65f
    Text: SEMICONDUCTOR KHB4D0N65P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N65P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power


    Original
    PDF KHB4D0N65P/F KHB4D0N65P KHB4D0N65F KHB4D0N65P khb*4D0N65f

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    Abstract: No abstract text available
    Text: SEMICONDUCTOR KHB4D0N65P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N65P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power


    Original
    PDF KHB4D0N65P/F/F2 KHB4D0N65P Fig15. Fig16. Fig17.

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


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    PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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