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KEC KHB4D0N65F2UPF N-CHANNEL MOS FIELD EFFECT TRANSISTOR Power Field-Effect Transistor
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KHB4D0N65 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
KHB4D0N65F		Korea Electronics	N CHANNEL MOS FIELD EFFECT TRANSISTOR		Original	PDF
KHB4D0N65P		Korea Electronics	N CHANNEL MOS FIELD EFFECT TRANSISTOR		Original	PDF

KHB4D0N65 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
khb*4D0N65f Abstract: KHB4D0N65F2 KHB4D0N65F KHB4D0N65P Text: SEMICONDUCTOR KHB4D0N65P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N65P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power	Original	PDF	KHB4D0N65P/F/F2 KHB4D0N65P Fig15. Fig16. Fig17. khb*4D0N65f KHB4D0N65F2 KHB4D0N65F KHB4D0N65P
4D0N65F Abstract: KHB4D0N65F2 khb*4D0N65f khb4d0n65 Text: SEMICONDUCTOR KHB4D0N65F2 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking 1 KHB 4D0N65F 2 No. 2007. 5. 23 713 2 Item Marking Description Device Name KHB4D0N65F2 KHB4D0N65F2 Lot No. 713 Revision No : 0 7 Year 0~9 : 2000~2009	Original	PDF	KHB4D0N65F2 O-220IS 4D0N65F 4D0N65F KHB4D0N65F2 khb*4D0N65f khb4d0n65
khb*4D0N65f Abstract: KHB4D0N65F Text: SEMICONDUCTOR KHB4D0N65P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N65P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power	Original	PDF	KHB4D0N65P/F KHB4D0N65P khb*4D0N65f KHB4D0N65F
KHB4D0N65F Abstract: KHB4D0N65P khb*4D0N65f Text: SEMICONDUCTOR KHB4D0N65P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N65P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power	Original	PDF	KHB4D0N65P/F KHB4D0N65P KHB4D0N65F KHB4D0N65P khb*4D0N65f
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR KHB4D0N65P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB4D0N65P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power	Original	PDF	KHB4D0N65P/F/F2 KHB4D0N65P Fig15. Fig16. Fig17.
9n90c Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W	Original	PDF	2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original	PDF