12V 30A diode
Abstract: KGT30N120NDA
Text: SEMICONDUCTOR KGT30N120NDA TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as general inverters, etc. A N O B Q H I FEATURES R C J F K ・High speed switching
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KGT30N120NDA
12V 30A diode
KGT30N120NDA
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KGT30N120NDA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as general inverters, etc. FEATURES ・High speed switching ・High system efficiency
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Original
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KGT30N120NDA
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KGT30N120NDA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as general inverters, etc. FEATURES 2011. 9. 6 Revision No : 0
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Original
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KGT30N120NDA
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PDF
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