SU SERIES CAPACITOR ALUMINIUM
Abstract: No abstract text available
Text: Aluminum Electrolytic Capacitor/KF Radial lead type Series: KF • Features Type : A Discontinued Endurance :105°C 1000 h Low impedance 1/3 to 1/4 of series KG 7mm high ■ Specification Operating Temp. Range Rated W.V. Range -55 to + 105°C 6.3 to 35 V .DC
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120Hz/
120Hz
120Hz)
RCR-2367
SU SERIES CAPACITOR ALUMINIUM
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Untitled
Abstract: No abstract text available
Text: Aluminum Electrolytic Capacitor/KF Radial lead type Series: KF • Features Type : A Discontinued Endurance :105°C 1000 h Low impedance 1/3 to 1/4 of series KG 7mm high ■ Specification Operating Temp. Range Rated W.V. Range -55 to + 105°C 6.3 to 35 V .DC
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120Hz/
120Hz
120Hz)
RCR-2367
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kf 202 transistor
Abstract: Chirp spice gummel SR770 spectra physics
Text: Measurement of ‘1/f’ Noise in Narrow Poly-silicon Emitter Bipolar Transistor Structures. S.D. Connor Bipolar Characterization Group, Central R&D, GEC Plessey Semiconductors, Tweedale Way, Oldham, Lancs OL9 7LA, England. Abstract:- We present here our initial findings on low frequency
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855E
Abstract: UPA862TD AN1026 NE685 S21E UPA862TD-T3 BF109 mje 13006 bf 9673
Text: NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • SMALL PACKAGE OUTLINE: 1.0±0.05 0.8 +0.07 -0.05 LOW HEIGHT PROFILE: E1 C2 Q1 6 B1 5 2 E2 3 Q2 4 B2 PIN CONNECTIONS 1. Collector Q1 2. Emitter (Q1)
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UPA862TD
NE851
NE685
855E
AN1026
S21E
UPA862TD-T3
BF109
mje 13006
bf 9673
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KF 517
Abstract: AN1026 NE685 S21E UPA862TD UPA862TD-T3-A
Text: NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • SMALL PACKAGE OUTLINE: 1.0±0.05 0.8 +0.07 -0.05 LOW HEIGHT PROFILE: E1 C2 Q1 6 B1 5 2 E2 3 Q2 4 B2 PIN CONNECTIONS 1. Collector Q1 2. Emitter (Q1)
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UPA862TD
NE851
NE685
KF 517
AN1026
S21E
UPA862TD-T3-A
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nec 16312 transistor
Abstract: cce 7100 BF 6591 sis 968 nec 16312 kf 203 transistor NE851M03 16312 transistor SiS 671 transistor KF 507
Text: NEC's NPN SILICON TRANSISTOR NE851M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm package height – Flat lead style for better RF performance IDEAL FOR ≤ 3 GHz OSCILLATORS
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NE851M03
NE851M03
2e-15
AN1026.
nec 16312 transistor
cce 7100
BF 6591
sis 968
nec 16312
kf 203 transistor
16312 transistor
SiS 671
transistor KF 507
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transistor c 6073
Abstract: 0809 af kf 982 c 4235 transistor npn BF 6591 2SC5786 BJT BF 331 SiS 671 AN1026 NE894M03
Text: NEC's NPN SILICON TRANSISTOR NE894M03 FEATURES • OUTLINE DIMENSIONS Units in mm MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm package height – Flat lead style for better RF performance • IDEAL FOR > 3 GHz OSCILLATORS
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NE894M03
NE894M03
AN1026.
83e-15
transistor c 6073
0809 af
kf 982
c 4235 transistor npn
BF 6591
2SC5786
BJT BF 331
SiS 671
AN1026
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8313 transistor to-3
Abstract: board ccb2 kf 982 855E transistor Bf 981
Text: SILICON TRANSISTOR UPA895TD NPN SILICON RF TWIN TRANSISTOR FEATURES LOW VOLTAGE, LOW CURRENT OPERATION Units in mm Package Outline TD (TOP VIEW) SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm 1.0±0.05 IDEAL FOR 1-3 GHz OSCILLATORS 1 2 0.4 0.8 3 The UPA895TD contains two NE851 high frequency silicon
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UPA895TD
NE851
UPA895TD
NE851
AN1026.
8313 transistor to-3
board ccb2
kf 982
855E
transistor Bf 981
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nec 16312 transistor
Abstract: Nec K 872 cce 7100 nec 16312 BJT IC Vce bjt npn m03 AT 1004 S12 hfe 4793 Laser Diode 808 2 pin 1000 mw transistor KF 507
Text: NEC's NPN SILICON TRANSISTOR NE851M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm package height – Flat lead style for better RF performance • IDEAL FOR ≤ 3 GHz OSCILLATORS
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NE851M03
NE851M03
nec 16312 transistor
Nec K 872
cce 7100
nec 16312
BJT IC Vce
bjt npn m03
AT 1004 S12
hfe 4793
Laser Diode 808 2 pin 1000 mw
transistor KF 507
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transistor Bf 966
Abstract: kf 982 AN1026 S21E UPA895TD UPA895TD-T3 2412 NEC
Text: NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • SMALL PACKAGE OUTLINE: Units in mm Package Outline TD (TOP VIEW) 1.2 mm x 0.8 mm • UPA895TD 1.0±0.05 0.8 +0.07 -0.05 LOW HEIGHT PROFILE: C1 6 B1
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UPA895TD
UPA895TD
NE851
transistor Bf 966
kf 982
AN1026
S21E
UPA895TD-T3
2412 NEC
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kp 1006
Abstract: AN1026 S21E UPA895TD UPA895TD-T3-A
Text: NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • SMALL PACKAGE OUTLINE: 1.0±0.05 0.8 +0.07 -0.05 LOW HEIGHT PROFILE: E1 NEC's UPA895TD contains two NE851 high frequency silicon bipolar chips. The NE851 is an excellent oscillator chip, featuring low 1/f noise and high immunity to pushing effects. NEC's
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UPA895TD
NE851
kp 1006
AN1026
S21E
UPA895TD-T3-A
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HBFP0420TR1
Abstract: transistor KF 517
Text: High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0420 Features • Ideal for High Gain, Low Noise Applications Description Surface Mount Plastic Package/ SOT-343 SC-70 Agilent’s HBFP-0420 is a high performance isolated collector
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HBFP-0420
OT-343
SC-70)
HBFP-0420
SC-70
OT-343)
5968-1684E
5968-5433E
HBFP0420TR1
transistor KF 517
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7400N
Abstract: CPH3249A 9500M
Text: CPH3249A SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 135.0f NF 1 IKF 195.0m NE 2 NR 1 IKR 75.00m NC 1.9 IRB 200.0m RE 73.00m XTB 2 XTI 3 VJE 680.0m TF 7n VTF 1.000K PTF VJC 500.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A
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CPH3249A
7400N
CPH3249A
9500M
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2SC4519
Abstract: No abstract text available
Text: 2SC4519 SPICE PARAMETER NPN Bipolar Transistor model : Gummel-Poon Parameter Value IS 70.00f NF 1 IKF 900.0m NE 2 NR 1 700.0m IKR NC 2 IRB 400.0u RE 175.0m XTB 2 XTI 3 VJE 680.0m TF 300p VTF 5 PTF VJC 550.0m XCJC 1 FC 50p AF 1 Temp = Date : Unit A A A A Ohm
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2SC4519
2SC4519
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TVR06
Abstract: n50t
Text: FZ 400 R 06 KF 2 Therm ische Eigenschaften Therm al properties Ftthjc DC, pro B a u ste in /p e rm o d u le 0,089 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties 0,03 pro Baustein / per module °C/W Maximum rated values VcE S 600
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2n3904 2n3906
Abstract: bcy71 ALTERNATIVE 2N3904 geometry 2n3251a THC3251A
Text: BIPOLAR TRANSISTORS AND GEOMETRIES ELECTRICAL CHARACTERISTICS at TA = + 25°C *CBO 'c Max. v * BRJCBO Polarity (mA (V) Allegro Type V (V) Max. V Ib (V) (nA) (V) @ v rr 00 2N2222A THC2222A NPN 800 75 40 6.0 10 60 10 3.0 2N2484 THC2484 NPN 50 60 60 6.0
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2N2222A
2N2484
2N2907A
2N3251A
2N3904
2N3906
2N4401
2N4403
BC847C
BCY71
2n3904 2n3906
bcy71 ALTERNATIVE
2N3904 geometry
THC3251A
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ff-130
Abstract: diode SS 3
Text: FF 100 R 06 KF 2 Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 600 V lc 100 A IcRM </ E 200 A O 10 Therm ische Eigenschaften Thermal properties Rthjc DC, pro B a u s te in /p e rmodule 0,155 DC, pro Zweig / per arm 0,31
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10CJ5
600KF3
-FF130Â
12S-C,
ff-130
diode SS 3
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Untitled
Abstract: No abstract text available
Text: FF 50 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 600 V c es Therm ische Eigenschaften Therm al properties DC, pro Baustein / per module 0,25 R th J C 0,50 DC, pro Zweig / per arm
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3M035T7
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1BW TRANSISTOR
Abstract: diode sg 5 ts
Text: EUPEC 5 2 E J> FF 100 R 06 KF 34032^7 m 0000212 003 «UPEC 7 = 3 9 - 3 / Thermische Eigenschaften Transistor Transistor Rthjc Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 600 V 100 A RthCK le Thermal properties
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34D32CI7
1BW TRANSISTOR
diode sg 5 ts
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kme-3 baustein
Abstract: No abstract text available
Text: FF 300 R 06 KL 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiqe Werte Maximum rated values Therm ische Eigenschaften Thermal properties DC, pro Baustein / per module 0 ,0 5 RthJC DC, pro Baustein / per module 0 ,1 pro Baustein / per module
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vqe 24 d
Abstract: vqe 24 e DIODE BZ s2e transistor VQE 24
Text: •T-3< -3 f F 6 - 50 R 12 KF EUPEC SEE T> Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum rated values 1200 V 50 A •c m 34032*17 Q0G0275 2^7 «UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein / per module
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T-34-3/
34G3217
Q0G0275
vqe 24 d
vqe 24 e
DIODE BZ
s2e transistor
VQE 24
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Untitled
Abstract: No abstract text available
Text: FF 300 R 06 KF 2 Therm ische Eigenschaften Therm al properties 0,05 DC, pro Baustein / per module 0,10 DC, pro Zweig / per arm pro Baustein / per module 0,03 RthCK 0,06 pro Zweig / per arm Transistor Transistor Elektrische Eigenschaften Electrical properties
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3403HT7
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603 transistor npn
Abstract: 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906
Text: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) Device Allegro Type Type
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000b515
2N918
2N2222A
2N2369
2N2484
2N2907A
2N2945
2N3019
2N3117
2N3251A
603 transistor npn
2N3906 DS
transistor BC 312
603 transistor npn dj
bipolar BC transistor
BC847C di
PN 2n2222A
2n3904 2n3906
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FZ 300 R 06 KL
Abstract: No abstract text available
Text: FF 400 R 06 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values 600 V cE S Therm ische Eigenschaften Thermal properties Rthjc DC, pro Baustein / per module 0,0345°C/W DC, pro Z w e ig /p e r arm
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FFUHJR06KF
FFUMR06
FZ 300 R 06 KL
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