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Abstract: No abstract text available
Text: SEMICONDUCTOR KDS126E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. B FEATURES B1 Low forward voltage. VF = 0.9V Typ. C 1 6 2 5 3 4 D A CT = 0.9pF(Typ.) C tr r= 1.6ns(Typ.) Small total capacitance. A1 Fast reverse recovery time.
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KDS126E
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS126E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES Low forward voltage. VF = 0.9V Typ. C 1 6 2 5 3 4 D A CT = 0.9pF(Typ.) C tr r= 1.6ns(Typ.) Small total capacitance. A1 Fast reverse recovery time.
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KDS126E
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KDS126E
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS126E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking UB 1 0 1 2. Marking 2 3 No. Item Marking Description Device Mark UB KDS126E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Index
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KDS126E
KDS126E
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS126E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES ・Low forward voltage. VF = 0.9V Typ. ・Fast reverse recovery time. C 6 2 5 3 4 D A 1 A1 CT = 0.9pF(Typ.) C tr r= 1.6ns(Typ.) ・Small total capacitance.
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KDS126E
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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