TS13
Abstract: TS11 T1329N NT2301 NT2401 cr 6850 t TS10 GS13 GS14 TS12
Text: Click on outline no. Phase Control Thyristors Type VDRM 2 VRRM V VDSM = VDRM VRSM = VRRM +100V 50V) up to 2800V continued T 708 N 1800.2200 T 709 N 2000.2600 ITRMSM A continued ∫i2dt ITSM A²s KA 10 ms, 10ms, Tvj max Tvj max VT/IT V/kA Tvj max ITAVM
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GT 1081
Abstract: T75 TYPE 2000 106 35K 10 35L DIODE RECTIFIER DIODE D100 kuka-2003-inhalt.qxd T75 550 106 35K 045 Eupec Power Semiconductors 588 n 250 f 101
Text: kuka-2003-inhalt.qxd 17.04.2003 10:34 Uhr Seite 35 Pulsed Power Applications Type T 4003 NH T 1503 NH T 2563 NH D 2601 NH VBO kV VRRM kV VTM/ITM V/kA ITSM kA di/dtcr on A/µs 5,2 7,5 … 8 7,5 … 8 9 1,8/6 3,0/4 2,95/6 4,9/4 100 40 56 45 5000 5000 5000 VDRM
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kuka-2003-inhalt
40L/82
26K/86
14suant
GT 1081
T75 TYPE 2000
106 35K
10 35L DIODE
RECTIFIER DIODE D100
kuka-2003-inhalt.qxd
T75 550
106 35K 045
Eupec Power Semiconductors 588 n
250 f 101
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RECTIFIER DIODE D100
Abstract: IFM D100 T75 TYPE 2000 106 35K 721 106 35K 106 35K 045 D748N-2800 DSW27 AL 2450 dv GTO MODULE
Text: IGBT and GCT – Freewheeling Diodes Type V DRM V D 911 SH D 1031 SH D 1331 SH • D 1641 SX ■ D 1181 SX ■ D 1441 SX D 931 SH D 1131 SH D 1951 SH V(D)D *) kV Tc = 25 typ. I(FSM) kA sin, 10 ms Tvj max ∫i2dt A2s • 103 sin, 10 ms Tvj max V(F)/I(FM) V/2,5 kA
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Untitled
Abstract: No abstract text available
Text: VDRH.E Vishay BCcomponents VDR Metal Oxide Varistors High Surge FEATURES • Zinc oxide disc, epoxy coated Straight or kinked leads Higher current surge/size ratio capability up to 10 kA for H20 types Certified according to UL 1449 edition 3,
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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IGCT
Abstract: ka2 DIODE igct abb 11ka
Text: VRSM = 5200 V IFAVM = 810 A IFRMS = 1270 A IFSM = 10.5 kA VF0 = 0.90 V rF = 0.600 mΩ Ω Rectifier Diode 5SDD 08D5000 Target specification Doc. No. 5SYA1165-00 Sep. 01 • Very low on-state losses • Optimum power handling capability Blocking Part Number
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08D5000
5SYA1165-00
08D4800
08D4400
CH-5600
IGCT
ka2 DIODE
igct abb
11ka
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SIOV-B32K460
Abstract: SIOV-B32K275 Varistor SIOV-B80K460 SIOV-B32K550 SIOV-B60K275 SIOV-B32K385 SIOV-B25K250 SIOV-B25K420 varistor B40 SIOV-B32K150
Text: Block-Varistoren Aufbau ● Scheibenförmiger Varistorkörper, im Kunststoffgehäuse vergossen ● Verguß und Gehäuse schwer entflammbar nach UL 94 V-0 ● Schraubanschlüsse M4 SIOV-B25 … 40 Schraubanschlüsse M5 (SIOV-B60 … 80) Eigenschaften ● Extrem belastbar (bis 100 kA)
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SIOV-B25
SIOV-B60
SIOV-B40
UL-E77005
CSA-LR63185
SIOV-B80
B25/B32/B40
B60/B80
SIOV-B25/-B32/-B40
SIOV-B32K460
SIOV-B32K275
Varistor SIOV-B80K460
SIOV-B32K550
SIOV-B60K275
SIOV-B32K385
SIOV-B25K250
SIOV-B25K420
varistor B40
SIOV-B32K150
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varistor VDR 275
Abstract: TME 87 X110Y
Text: VDRH.E/2381 58. . Vishay BCcomponents VDR Metal Oxide Varistors High Surge FEATURES • Zinc oxide disc, epoxy coated • Straight or kinked leads • Higher current surge/size ratio capability up to 10 kA for H20 types • Compliant to RoHS directive 2002/95/EC and in
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E/2381
2002/95/EC
2002/96/EC
18-Jul-08
varistor VDR 275
TME 87
X110Y
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varistor VDR 275
Abstract: VDRH07 x271y VDRH14V320 VDRH14V VDRH14V625ByE VISHAY VARISTORS vdrh10.e 610512 VDRH10S250
Text: VDRH.E/2381 58. . Vishay BCcomponents VDR Metal Oxide Varistors High Surge FEATURES • Zinc oxide disc, epoxy coated Straight or kinked leads Higher current surge/size ratio capability up to 10 kA for H20 types Compliant to RoHS Directive 2002/95/EC and in
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E/2381
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
varistor VDR 275
VDRH07
x271y
VDRH14V320
VDRH14V
VDRH14V625ByE
VISHAY VARISTORS
vdrh10.e
610512
VDRH10S250
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varistor VDR 275
Abstract: 2381 582 vdrh10.e 271 varistor
Text: VDRH.E/2381 58. . Vishay BCcomponents VDR Metal Oxide Varistors High Surge FEATURES • Zinc oxide disc, epoxy coated Straight or kinked leads Higher current surge/size ratio capability up to 10 kA for H20 types Compliant to RoHS Directive 2002/95/EC and in
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E/2381
2002/95/EC
2002/96/EC
11-Mar-11
varistor VDR 275
2381 582
vdrh10.e
271 varistor
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VDRH20X275BYE
Abstract: VDRH14V320xyE varistor VDR 275 VDRH07K510xyE VDRH14V510xyE VDRH14V275xyE VDRH05B011xyE VDRH10G025xyE VDRH10S230xyE X6816
Text: 2381 58. ./VDRH.E Vishay BCcomponents VDR Metal Oxide Varistors High Surge FEATURES • Zinc oxide disc, epoxy coated • Straight or kinked leads • Higher current surge/size ratio capability up to 10 kA for H20 types • Compliant to RoHS directive 2002/95/EC and in
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2002/95/EC
2002/96/EC
18-Jul-08
VDRH20X275BYE
VDRH14V320xyE
varistor VDR 275
VDRH07K510xyE
VDRH14V510xyE
VDRH14V275xyE
VDRH05B011xyE
VDRH10G025xyE
VDRH10S230xyE
X6816
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VDRH14
Abstract: varistor VDR 275 09 66 123 780 VDRH07 vdrh20 VDRH07K275
Text: VDRH.E/2381 58. . Vishay BCcomponents VDR Metal Oxide Varistors High Surge FEATURES • Zinc oxide disc, epoxy coated • Straight or kinked leads • Higher current surge/size ratio capability up to 10 kA for H20 types • Compliant to RoHS directive 2002/95/EC and in
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E/2381
2002/95/EC
2002/96/EC
11-Mar-11
VDRH14
varistor VDR 275
09 66 123 780
VDRH07
vdrh20
VDRH07K275
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VARISTOR k130
Abstract: VARISTOR k130 AC varistor B40 B40K750 B80K250 k130 varistor B32K130 B32K420 Q69X3309 B32K460
Text: Block Varistors Block Varistors Construction ● Disk-shaped varistor element, potted in plastic housing ● Housing flame-retardant to UL 94 V-0 ● Screw terminals M4 SIOV-B32 … 40 Screw terminals M5 (SIOV-B60 … 80) Features ● ● ● ● Heavy-duty varistors (surge current capability up to 100 kA)
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SIOV-B32
SIOV-B60
SIOV-B40
SIOV-B80)
Dam1200
B60K1000
B80K1100
SIOVB32K420
B40K420
B60K420
VARISTOR k130
VARISTOR k130 AC
varistor B40
B40K750
B80K250
k130 varistor
B32K130
B32K420
Q69X3309
B32K460
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cr 6850 t
Abstract: T 698 DIN 1445 l 0380 T188F
Text: Phase Control Thyristors Type VDRM VRRM V ITRMSM ITSM A kA 600.1800* ∫i²dt A²s 10ms, 10ms, tvj max tvj max *10³ VDSM = VDRM VRSM=VRRM +100V T 86 N Netz-Thyristoren 200 2 20 ITAVM/tc V TO A/°C V 180° el sin tvj = tvj 86/85 1,00 max rT (di/dt)cr tq
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SPT411A
Abstract: No abstract text available
Text: $! SPT411A “The Power Processor Company” 4600A, 5000V 125mm Thyristor May-2000 Features Package 4600A, 5000V 270kA Pulse Current Capability 20kA/µS di/dt Pulse Capability Low Power Gate Driver A=162.7mm, B=106.4mm, C=20.12mm, D=7.71mm Notes - 1, 2 & 3
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SPT411A
125mm
May-2000
270kA
SPT411A
t411dat6
Spt411
t411rec1
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SPT402
Abstract: oz 9981 SPT402A SPT402B 25000lb
Text: SPT402 125mm THYRIST OR THYRISTO 5000V 4600A The SPT402 thyristor features a multi-arm involute gate which can be triggered with 5 - 10 A gate pulses by means of an integrated pilot gate or directly fired using 50 - 100A gate pulses. The involute pattern affords full area conduction in minimum time while
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SPT402
125mm
SPT402A
SPT402B
00A/us
000A/us
000-4000A/us
115oC
oz 9981
SPT402A
SPT402B
25000lb
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WG5026S
Abstract: WG6006RXX X103 westcode diodes westcode wg
Text: Gate T urn-off Thyristors ~ All types Symmetrical Types V R RM ^TGQM@ C S CO ^DRM > Type V GK = -2V I t AV T « =55°C •^TSM(2) 2ms I2t (Note 4) (kA) (Note 4) (Note 4) (kA) (A 2s) 4 7.2 80 x 103 9 130 x 1 0 3 9-8 18 500 x 103 •^T(RMS) W ^ T SM (1) 10ms
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W25-C
WG5012Rxx
25Rxx
WG6006RXX
18Rxx
WG9006Rxx
14Rxx
WG10026Rxx
36Rxx
WG10037RXX
WG5026S
X103
westcode diodes
westcode wg
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7476m
Abstract: TS13 la 6500
Text: Phase Control Thyristors Type V 2> V D RM V rrm V ii2dt It s m A A2s KA =V T y | max rrm A V/kA T v j max T vj max It a v m V TO V A/°C 180°el sin Tv¡ = Tc = 85°C Tvj max h m£î T vj = T v j max ,103 +100V(50V) up to 1000V T 210 N T 348 N T 398 N T 568 N
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T016/14
T0110/26
T0110/35
T0100/26
T0170/40
7476m
TS13
la 6500
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S1104SFU25
Abstract: 104S S954 s95A S962SJU25 S962SJU26 S962SJU27 S962SJU28 S962SJU29 S962SJU30
Text: HIGH POWER FLAT BASE' DIODES — 3 3 5 to 1010A available m atched fo r parallel o p eration , replace S in cen tre o f ty p e No. by P I f A V 1 0 0 'C If s m 335 A 5600 A |2t 157 kA;!sec Type No. V rsm S962SJU25 S962SJU26 S962SJU27 S962SJU28 S962SJU29
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335to
S962SJU25
S962SJU26
S962SJU27
S962SJU28
S962SJU29
S962SJU30
S962SJU31
S962SJU32
S962SJU33
S1104SFU25
104S
S954
s95A
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D1809
Abstract: 2040.2590 68 4401 D1029 D1030 D1049 D1069 D1800 D452N
Text: Rectifier Diodes Type V rrm Ifrm sm Ifsm V A kA 10ms, 1^jmax V r SM = Vrrm + 100 V 50V 1) J i2d t A2s I fA V M ^ C V (T O ) It RthJC tvj max A /°C V m£2 °c/w °c 180° el sin 1 0 m S , t^jmax tvi = tv, = •103 ^vj max ^vj max outline D 121 N 800.2000
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0DQ2170
D1809
2040.2590
68 4401
D1029
D1030
D1049
D1069
D1800
D452N
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100 N 37
Abstract: LT 6250
Text: Rectifier diodes Type If r m s m V rrm V rsm tpSM ,/i2dt If a v m ^ c V TO lT R th jc ’»I * max tvi = t'.'| max 180 °el sin. tv j m ax Outline = Vrrm + 100 V 10 ms, 10 ms, tv] max W|max A kA A2s A/°C V mi) °c/w °c ▲ D 1800 N D 1809 N 2800 4000 3200
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IG 2200 19
Abstract: No abstract text available
Text: Rectifier diodes Type Vrrm V r sm I f r u SM = V rrm If-SM / i2dt 10 m s, 10 ms, t. A V D 121 N D 121 K D 150 N 800 1200 1800 2000 800 1200 1800 2000 2800 3200 kA 360 1400 mû. 2.6 kA2s 33.8 D 255 N 1400 330 2.4 28.8 3600 420 3.7 68.5 t v, t., ir,i. 180°el
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btb 4600
Abstract: NT1050
Text: Phase Control Thyristors Type V V It r m drm rrm V sm A Vdsm = Vqrm Vrsm=Vrrm +100V T 86 N J i2dt I lTAVM/tC V TO kA A2s A/°C V 10ms, 10ms, 180° el tvi = sin ^vj max tvj max tvj max It s m rT m £2 tvj = (di/dt)cr (dv/dt)cr A/ps MS DIN IEC typ. V/ps DIN IEC
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yh 4100
Abstract: T1321 T508n outline T1500 T718N T730 T919 T1050 T1099 T1200
Text: Phase Control Thyristors T ype V drm V rrm V Vdsm = VDRM Itrmsm A V rsm=V rrM +100V d i/d t cr tq Itsm J i2dt lTAVM/tC V(TO) U kA A2s A/°C V A/|JS MS 10ms, 10ms, 180“ el tv¡ = tv¡ = DIN IEC typ. sin ^ v jm ax Ivjm ax v jm ax 747-6 tvjm ax ^ ’ IO3 (d v /d t)cr
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3HD32T7
yh 4100
T1321
T508n outline
T1500
T718N
T730
T919
T1050
T1099
T1200
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Untitled
Abstract: No abstract text available
Text: Rectifier Diodes Type V rrm Ifrm sm V A Vrsm = V r r m + 100 V 50V 1) i izdt kA A2s 10 ms, 1^jmax 10ms, tJjm ax '103 Ifsm lF A V M /t c V (T O ) rT R th J C tv j max A/°C V m ii °c/w °c tvi = 180° el sin tvi = max outline ^v| max D 121 N 800.2000 360
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00021bû
3HG32T?
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