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    Samsung Semiconductor K6R4016V1D-TC10

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    Bristol Electronics K6R4016V1D-TC10 1,076
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    Quest Components K6R4016V1D-TC10 840
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    K6R4016V1D-TC10 20
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    K6R4016V1D-TC10 3
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    Samsung Semiconductor K6R4016V1D-TC10T00

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    Quest Components K6R4016V1D-TC10T00 800
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    Samsung Semiconductor K6R4016V1D-TC08

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    Quest Components K6R4016V1D-TC08 24
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    Samsung Semiconductor K6R4016V1D-KI10T00

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    Samsung Semiconductor K6R4016V1D-TC08T00

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    K6R4016V1D Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K6R4016V1D Samsung Electronics 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R4016V1D-EI10 Samsung Electronics K6R4016V1D 256K x 16 Bit High Speed Static RAM(3.3V Operating). Organization = 256K x 16 Vcc(V) = 3.3 Speed-tAA(ns) = 8,10 Operating Temperature = C,i Operating Current(mA) = 80,65 Standby Current(mA) = 5 Package = 44SOJ,44TSOP2,48TBGA Original PDF
    K6R4016V1D-JC Samsung Electronics Original PDF
    K6R4016V1D-TC10 Samsung Electronics K6R4016V1D 256K x 16 Bit High Speed Static RAM(3.3V Operating). Organization = 256K x 16 Vcc(V) = 3.3 Speed-tAA(ns) = 8,10 Operating Temperature = C,i Operating Current(mA) = 80,65 Standby Current(mA) = 5 Package = 44SOJ,44TSOP2,48TBGA Original PDF

    K6R4016V1D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K6R4016V1D

    Abstract: K6R4016V1D-U K6R4016V1D -ui10 44-TSOP2-400BF K6R4016 K6R4008V1D K6R4016V1D-T K6R4016V1D-J K6R4004 K6R4016V1D10
    Text: PRELIMPreliminaryPPPPPPPPPINARY K6R4016V1D CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary.


    Original     		K6R4016V1D 256Kx16 110mA 130mA 55/Typ. 35/Typ. K6R4016V1D K6R4016V1D-U K6R4016V1D -ui10 44-TSOP2-400BF K6R4016 K6R4008V1D K6R4016V1D-T K6R4016V1D-J K6R4004 K6R4016V1D10 PDF

    k6r4016

    Abstract: K6R4016V1D K6R4016V1D -ui10 K6R4004C1D-JC
    Text: PRELIMPreliminaryPPPPPPPPPINARY CMOS SRAM K6R4016V1D Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    Original     		K6R4016V1D 256Kx16 110mA 55/Typ. 35/Typ. k6r4016 K6R4016V1D K6R4016V1D -ui10 K6R4004C1D-JC PDF

    K6R4016V1D-T

    Abstract: K6R4016V1D
    Text: PRELIMPreliminaryPPPPPPPPPINARY K6R4016V1D CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary.


    Original     		K6R4016V1D 256Kx16 110mA 55/Typ. 35/Typ. K6R4016V1D-T K6R4016V1D PDF

    K6R4016V1D

    Abstract: No abstract text available
    Text: PRELIMPreliminaryPPPPPPPPPINARY K6R4016V1D CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary.


    Original     		K6R4016V1D 256Kx16 110mA 130mA 115mA 100mA 35/Typ. 55/Typ. K6R4016V1D PDF

    K6R4016V1D-T

    Abstract: K6R4016V1D
    Text: PRELIMPreliminaryPPPPPPPPPINARY K6R4016V1D CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary.


    Original     		K6R4016V1D 256Kx16 110mA 130mA 115mA 100mA Read80 002MIN K6R4016V1D-T K6R4016V1D PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMPreliminaryPPPPPPPPPINARY K6R4016V1D CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary.


    Original     		K6R4016V1D 256Kx16 110mA 130mA 115mA 100mA 35/Typ. 55/Typ. PDF

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm PDF

    K6R4004C1D-JC

    Abstract: K6R4004V1D K6R4016V1D-J
    Text: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary


    Original     		K6R4004V1D 110mA 130mA 115mA 100mA 32-SOJ-400 K6R4004C1D-JC K6R4004V1D K6R4016V1D-J PDF

    CS16LV40963

    Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
    Text: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D


    Original     		32Kx8 LY6264 LY62L64 LY62256 LY62L256 LY62256 128Kx8 64Kx16 LY621024 LY62L1024 CS16LV40963 BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D PDF

    K6R4008V1D

    Abstract: K6R4016C1D 44-TSOP2
    Text: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary


    Original     		K6R4004V1D 110mA 130mA 115mA 100mA 32-SOJ-400 K6R4008V1D K6R4016C1D 44-TSOP2 PDF

    K6R4016V1D-J

    Abstract: No abstract text available
    Text: Preliminary PRELIMINARY CMOS SRAM K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001


    Original     		K6R4004C1D 115mA 100mA 32-SOJ-400 K6R4016V1D-J PDF

    K6R4016V1D-J

    Abstract: K6R4008V1D
    Text: PRELIMINARY CMOS SRAM K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001


    Original     		K6R4008V1D 512Kx8 110mA 130mA 115mA 100mA 44-TSOP2-400BF K6R4016V1D-J K6R4008V1D PDF

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B PDF

    GM120BP

    Abstract: resistor 60k ohm gssp gm120bp 638Bh K6R4016V1D gssp PUR50 P35-P34 DDR4 65p03
    Text: June 2006 GM120BP 8-BIT MICROCONTROLLER USER’S MANUAL REVISION 0.5 GM120BP TABLE OF CONTENTS 1. PRODUCT OVERVIEW . 3 2. MEMORY ORGANIZATION . 13


    Original     		GM120BP 40-Pin GM120BP 64-LQFP resistor 60k ohm gssp gm120bp 638Bh K6R4016V1D gssp PUR50 P35-P34 DDR4 65p03 PDF

    K6R4016V1D-J

    Abstract: K6R4008 K6R4008V1D K6R4004C1D-JC K6R4016
    Text: PRELIMINARY CMOS SRAM K6R4008V1D Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001


    Original     		K6R4008V1D 512Kx8 110mA 130mA 115mA 100mA 44-TSOP2-400BF 002MIN K6R4016V1D-J K6R4008 K6R4008V1D K6R4004C1D-JC K6R4016 PDF

    44-TSOP2

    Abstract: K6R4004C1D
    Text: PRELIMINARY CMOS SRAM K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001 Preliminary


    Original     		K6R4004C1D 115mA 100mA 32-SOJ-400 44-TSOP2 K6R4004C1D PDF

    MC34063 design examples

    Abstract: No abstract text available
    Text: STM32-P207 development board USER’S MANUAL Revision D, May 2014 Designed by OLIMEX Ltd, 2011 All boards produced by Olimex LTD are ROHS compliant OLIMEX 2014 STM32-P207 user's manual Disclaimer: © 2014 Olimex Ltd. Olimex , logo and combinations thereof, are registered trademarks of Olimex Ltd.


    Original     		STM32-P207 MC34063 design examples PDF

    K7A803609B-PC25

    Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
    Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15


    Original     		K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20 PDF

    ADM809RAR

    Abstract: AS7C256A hsbga 416 lcd cross reference IDT CYPRESS CROSS REFERENCE clocks DS1232* watch dog timer Product Selector Guide mbg* sot143 FS781 IDT74SSTV16857
    Text: DISCLAIMER Alliance Semiconductor Corporation reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance and to supply the best possible product. Alliance Semiconductor does not assume any responsibility for use of any circuitry described other than the circuitry embodied


    Original     		IS61LV25616AL IS61LV5128AL IS61LV6416 IS61C6416 IS61LV1024 48-pin AS9C25256M2036L AS9C25512M2018L 512Kx18 ADM809RAR AS7C256A hsbga 416 lcd cross reference IDT CYPRESS CROSS REFERENCE clocks DS1232* watch dog timer Product Selector Guide mbg* sot143 FS781 IDT74SSTV16857 PDF

    K6X0808C1D-BF55

    Abstract: HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L
    Text: cross_reference Density Organization Alliance Alliance Part Number Alliance Package Alliance Speed Samsung Samsung Part Number Cypress Cypress Part Number Cypress Package Cypress Package Code Cypress Speed IDT Part Number IDT Package IDT Package Code IDT Speed ISSI


    Original     		CY7C128A-15VC CY7C128A-15SC CY7C167A-15PC CY7C168A-15PC 24PIN 20PIN 300MIL K6X0808C1D-BF55 HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L PDF

    k6r4008c1d-j

    Abstract: K6R4004V1D K6R4016C1D K6R4008C1D 36-SOJ-400 36-SOJ Samsung K6R4008C1D
    Text: PRELIMINARY CMOS SRAM K6R4008C1D Document Title 512Kx8 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001 Preliminary


    Original     		K6R4008C1D 512Kx8 115mA 100mA 44-TSOP2-400BF k6r4008c1d-j K6R4004V1D K6R4016C1D K6R4008C1D 36-SOJ-400 36-SOJ Samsung K6R4008C1D PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Preliminary CMOS SRAM K6R4008C1D Document Title 512Kx8 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001


    Original     		K6R4008C1D 512Kx8 115mA 100mA 44-TSOP2-400BF PDF

    K6R4016V1D-UI10

    Abstract: LD0506 BLM21PG331SN1D TP0950 R1004 lm4480 transistor c1026 K6R4016V1D 7-segment LED display 1 to 99 vhdl FB0701
    Text: LatticeMico32/DSP Development Board for LatticeECP2 User’s Guide June 2009 Revision: EB26_02.6 LatticeMico32/DSP Development Board for LatticeECP2 User’s Guide Lattice Semiconductor Introduction This document describes the features and functionality of the LatticeMico32 /DSP Development Board for


    Original     		LatticeMico32/DSP LatticeMico32TM/DSP LatticeMico32 100mm, 150mm, 120mm, K6R4016V1D-UI10 LD0506 BLM21PG331SN1D TP0950 R1004 lm4480 transistor c1026 K6R4016V1D 7-segment LED display 1 to 99 vhdl FB0701 PDF

    MTC-C202DPRN-1N

    Abstract: K6R4016V1D-TC10 7-segment LED display 1 to 99 vhdl TP0335 transistor r1009 TP0339 TP0338 TP0920 TP033 TP0320
    Text: LatticeMico32/DSP Development Board User’s Guide October 2007 Revision: EB17_01.4 LatticeMico32/DSP Development Board User’s Guide Lattice Semiconductor Introduction This document describes the features and functionality of the LatticeMico32/DSP Development Board. This board


    Original     		LatticeMico32/DSP LatticeMico32 MTC-C202DPRN-1N K6R4016V1D-TC10 7-segment LED display 1 to 99 vhdl TP0335 transistor r1009 TP0339 TP0338 TP0920 TP033 TP0320 PDF