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    Samsung Semiconductor K6R1008V1D-TI10

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    Samsung Semiconductor K6R1008V1D-TC10

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    Samsung Semiconductor K6R1008V1D-JC10

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    Quest Components K6R1008V1D-JC10 130
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    Samsung Semiconductor K6R1008V1D-JC08

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    Samsung Semiconductor K6R1008V1DTC10

    128K X 8 BIT HIGH-SPEED CMOS STATIC RAM (3.3V OPERATING) Standard SRAM, 128KX8, 10ns, CMOS, PDSO32
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    ComSIT USA K6R1008V1DTC10 156
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    K6R1008V1D Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K6R1008V1D Samsung Electronics 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating) Data Sheet Original PDF
    K6R1008V1D-JC08 Samsung Electronics 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Original PDF
    K6R1008V1D-JC10 Samsung Electronics 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Original PDF
    K6R1008V1D-JI08 Samsung Electronics 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Original PDF
    K6R1008V1D-JI10 Samsung Electronics 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Original PDF
    K6R1008V1D-J(T)C(I)08 Samsung Electronics 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R1008V1D-J(T)C(I)08/10 Samsung Electronics 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R1008V1D-J(T)C(I)08_10 Samsung Electronics 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R1008V1D-J(T)C(I)10 Samsung Electronics 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. Original PDF
    K6R1008V1D-KC08 Samsung Electronics 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Original PDF
    K6R1008V1D-KC10 Samsung Electronics 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Original PDF
    K6R1008V1D-KI08 Samsung Electronics 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Original PDF
    K6R1008V1D-KI10 Samsung Electronics 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Original PDF
    K6R1008V1D-TC08 Samsung Electronics 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Original PDF
    K6R1008V1D-TC10 Samsung Electronics 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Original PDF
    K6R1008V1D-TI08 Samsung Electronics 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Original PDF
    K6R1008V1D-TI10 Samsung Electronics 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Original PDF
    K6R1008V1D-UC08 Samsung Electronics 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Original PDF
    K6R1008V1D-UC10 Samsung Electronics 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Original PDF
    K6R1008V1D-UI08 Samsung Electronics 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Original PDF

    K6R1008V1D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K6R1008V1D

    Abstract: No abstract text available
    Text: PRELIMINARY for AT&T CMOS SRAM K6R1008V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. Speed bin modify


    Original     		PDF K6R1008V1D 64Kx16 100mA 32-TSOP2-400CF 002MIN K6R1008V1D

    K6R1008V1D

    Abstract: No abstract text available
    Text: PRELIMINARY for AT&T CMOS SRAM K6R1008V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. Speed bin modify


    Original     		PDF K6R1008V1D 64Kx16 100mA 32-TSOP2-400CF 002MIN K6R1008V1D

    K6R1008V1D

    Abstract: 32-SOJ 44TSOP
    Text: PRELIMINARY for AT&T CMOS SRAM K6R1008V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document.


    Original     		PDF K6R1008V1D 64Kx16 100mA 32-TSOP2-400CF 047MAX K6R1008V1D 32-SOJ 44TSOP

    K6R1004C1D

    Abstract: No abstract text available
    Text: PRELIMINARY Preliminary PRELIMINARY K6R1004C1D CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating). Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial release with Preliminary. Current modify 1. Delete 15ns speed bin.


    Original     		PDF K6R1004C1D 256Kx4 32-SOJ-400 K6R1004C1D

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    CS16LV40963

    Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
    Text: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D


    Original     		PDF 32Kx8 LY6264 LY62L64 LY62256 LY62L256 LY62256 128Kx8 64Kx16 LY621024 LY62L1024 CS16LV40963 BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    1H08S

    Abstract: PI6C2405A-1HW ASM706CUA SOIC-6 microchip ADM809RAR ADM705AN MAX809SEUR T ASM5P2309-1H-16-S K7N163601B MAX810JEUR
    Text: Supervisors Cross Reference Guide Alliance Maxim/Dallas IMP ASM1232LP DS1232LPS-2 IMP1232LP ASM1232LPCMA DS1232LP IMP1232LPCMA ASM1232LPEMA DS1232LP IMP1232LPEMA ASM1232LPN DS1232LP IMP1232LPN Analog Devices Micrel Microchip MIC1232N TC1232CPA - - - - - -


    Original     		PDF ASM1232LP DS1232LPS-2 IMP1232LP ASM1232LPCMA DS1232LP IMP1232LPCMA ASM1232LPEMA IMP1232LPEMA ASM1232LPN 1H08S PI6C2405A-1HW ASM706CUA SOIC-6 microchip ADM809RAR ADM705AN MAX809SEUR T ASM5P2309-1H-16-S K7N163601B MAX810JEUR

    K6R1016V1D

    Abstract: No abstract text available
    Text: for AT&T CMOS SRAM K6R1016V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. Speed bin modify Current modify


    Original     		PDF K6R1016V1D 64Kx16 100mA 55/Typ. 35/Typ. K6R1016V1D

    K7A803609B-PC25

    Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
    Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15


    Original     		PDF K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20

    ADM809RAR

    Abstract: AS7C256A hsbga 416 lcd cross reference IDT CYPRESS CROSS REFERENCE clocks DS1232* watch dog timer Product Selector Guide mbg* sot143 FS781 IDT74SSTV16857
    Text: DISCLAIMER Alliance Semiconductor Corporation reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance and to supply the best possible product. Alliance Semiconductor does not assume any responsibility for use of any circuitry described other than the circuitry embodied


    Original     		PDF IS61LV25616AL IS61LV5128AL IS61LV6416 IS61C6416 IS61LV1024 48-pin AS9C25256M2036L AS9C25512M2018L 512Kx18 ADM809RAR AS7C256A hsbga 416 lcd cross reference IDT CYPRESS CROSS REFERENCE clocks DS1232* watch dog timer Product Selector Guide mbg* sot143 FS781 IDT74SSTV16857

    K6R1016C1D

    Abstract: No abstract text available
    Text: Preliminary PRELIMINARY CMOS SRAM K6R1016C1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. Rev. Rev. Rev. Initial release with Preliminary.


    Original     		PDF K6R1016C1D 64Kx16 55/Typ. 35/Typ. K6R1016C1D

    K6X0808C1D-BF55

    Abstract: HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L
    Text: cross_reference Density Organization Alliance Alliance Part Number Alliance Package Alliance Speed Samsung Samsung Part Number Cypress Cypress Part Number Cypress Package Cypress Package Code Cypress Speed IDT Part Number IDT Package IDT Package Code IDT Speed ISSI


    Original     		PDF CY7C128A-15VC CY7C128A-15SC CY7C167A-15PC CY7C168A-15PC 24PIN 20PIN 300MIL K6X0808C1D-BF55 HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L

    K6R1008C1D

    Abstract: No abstract text available
    Text: PRELIMINARY Preliminary PRELIMINARY K6R1008C1D CMOS SRAM Document Title 128Kx8 Bit High-Speed CMOS Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial release with Preliminary.


    Original     		PDF K6R1008C1D 128Kx8 32-TSOP2-400CF 002MIN K6R1008C1D

    44-SOJ

    Abstract: K6R1004C1D
    Text: PRELIMINARY PRELIMINARY K6R1004C1D CMOS SRAM Document Title 256Kx4 Bit with OE High-Speed CMOS Static RAM(5.0V Operating). Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial release with Preliminary. Current modify 1. Delete 15ns speed bin.


    Original     		PDF K6R1004C1D 256Kx4 32-SOJ-400 44-SOJ K6R1004C1D

    MBI5024

    Abstract: dm13c macroblock MBI5024 MBI6030 K4S641632H Dm413 CS18LV00645 CS18LV4096 MBI5026 CS18LV40963
    Text: LED Driver IC for Display Org. Chiplus Macroblock SITI Toshiba Dallas Maxim STMicro Allegro 16 Bit CS8816 / CS8826 MBI5024 / MBI5026 DM134 / DM135 / DM13C TB62706 / TB62726 MAX6969 / MAX6971 STP16C596 / STP16CP05 A6276 8 Bit CS8808/CS8818 MBI5167 / MBI5168


    Original     		PDF CS8816 CS8826 MBI5024 MBI5026 DM134 DM135 DM13C TB62706 TB62726 MAX6969 dm13c macroblock MBI5024 MBI6030 K4S641632H Dm413 CS18LV00645 CS18LV4096 MBI5026 CS18LV40963

    K6R1016C1D

    Abstract: K6R1004V1D
    Text: PRELIMINARY PRELIMINARY for AT&T K6R1004V1D CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document.


    Original     		PDF K6R1004V1D 64Kx16 100mA 32-SOJ-400 K6R1016C1D K6R1004V1D

    K6R1016C1D-U

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS SRAM K6R1016C1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Rev. 0.3 Initial release with Preliminary.


    Original     		PDF K6R1016C1D 64Kx16 002MIN 35/Typ. 55/Typ. K6R1016C1D-U

    K6R1008C1D

    Abstract: DSA00199284
    Text: PRELIMINARY PRELIMINARY K6R1008C1D CMOS SRAM Document Title 128Kx8 Bit High-Speed CMOS Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial release with Preliminary.


    Original     		PDF K6R1008C1D 128Kx8 32-TSOP2-400CF 002MIN K6R1008C1D DSA00199284

    K6R1004V1D

    Abstract: No abstract text available
    Text: PRELIMINARY PRELIMINARY for AT&T K6R1004V1D CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document.


    Original     		PDF K6R1004V1D 64Kx16 100mA 32-SOJ-400 K6R1004V1D

    K6R1008C1D

    Abstract: K6R1008 44-SOJ K6R1016 K6R1008C1DT 32-SOJ-400 32-TSOP2-400CF
    Text: PRELIMINARY PRELIMINARY K6R1008C1D CMOS SRAM Document Title 128Kx8 Bit High-Speed CMOS Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial release with Preliminary.


    Original     		PDF K6R1008C1D 128Kx8 32-TSOP2-400CF 047MAX 002MIN K6R1008C1D K6R1008 44-SOJ K6R1016 K6R1008C1DT 32-SOJ-400 32-TSOP2-400CF

    K6R1016C1D

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS SRAM K6R1016C1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. Rev. Rev. Rev. Initial release with Preliminary. Page 4, DC operation condition modify


    Original     		PDF K6R1016C1D 64Kx16 55/Typ. 35/Typ. K6R1016C1D

    K6R1016V1D

    Abstract: No abstract text available
    Text: for AT&T CMOS SRAM K6R1016V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. Speed bin modify Current modify


    Original     		PDF K6R1016V1D 64Kx16 100mA 55/Typ. 35/Typ. K6R1016V1D

    K6R1004V1D

    Abstract: K6R1016
    Text: PRELIMINARY PRELIMINARY for AT&T K6R1004V1D CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document.


    Original     		PDF K6R1004V1D 64Kx16 100mA 32-SOJ-400 K6R1004V1D K6R1016