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    Samsung Semiconductor K4S280832E-TC7C

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    K4S280832E Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S280832E-TC75 Samsung Electronics 128Mb SDRAM, 3.3V, LVTTL, 133MHz Original PDF
    K4S280832E-TC(L)75 Samsung Electronics 128Mb E-die SDRAM Specification Original PDF
    K4S280832E-TCL75 Samsung Electronics 128Mb SDRAM, 3.3V, LVTTL, 133MHz Original PDF
    K4S280832E-TL75 Samsung Electronics 128Mb E-die SDRAM Specification Original PDF

    K4S280832E Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: K4S280832E CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Rev. 1.0 Nov. 2002 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 Nov. 2002 K4S280832E CMOS SDRAM Revision History Revision 1.0 Nov., 2002


    Original     		PDF K4S280832E 128Mbit

    M366S0924ETS-C7A

    Abstract: M366S1723ETS-C7A M366S1723ETU-C7A M366S3323ETS-C7A M366S3323ETU-C7A M374S1723ETS-C7A M374S1723ETU-C7A
    Text: 64MB, 128MB, 256MB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 128Mb E-die 62/72-bit Non ECC/ECC Revision 1.3 February. 2004 Rev. 1.3 February 2004 64MB, 128MB, 256MB Unbuffered DIMM SDRAM Revision History Revision 1.0 November., 2002


    Original     		PDF 128MB, 256MB 168pin 128Mb 62/72-bit M366S0924ETS-C7A M366S1723ETS-C7A M366S1723ETU-C7A M366S3323ETS-C7A M366S3323ETU-C7A M374S1723ETS-C7A M374S1723ETU-C7A

    Untitled

    Abstract: No abstract text available
    Text: PC133 Unbuffered DIMM M374S1723ETS M374S1723ETS SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs GENERAL DESCRIPTION FEATURE The Samsung M374S1723ETS is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF M374S1723ETS M374S1723ETS PC133 16Mx72 16Mx8, 400mil 168-pin

    PC133 registered reference design

    Abstract: No abstract text available
    Text: M390S1723ET1 PC133 Registered DIMM M390S1723ET1 SDRAM DIMM 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs FEATURE GENERAL DESCRIPTION • Performance range The Samsung M390S1723ET1 is a 16M bit x 72 Synchronous


    Original     		PDF M390S1723ET1 M390S1723ET1 PC133 16Mx72 16Mx8, 16Mx8 400mil 18-bits PC133 registered reference design

    Untitled

    Abstract: No abstract text available
    Text: PC133 Low Profile Unbuffered DIMM M374S1723ETU M374S1723ETU SDRAM DIMM 16Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs GENERAL DESCRIPTION FEATURE The Samsung M374S1723ETU is a 16M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF M374S1723ETU M374S1723ETU PC133 16Mx72 16Mx8, 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: SDRAM 128Mb E-die x4, x8, x16 CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.3 January 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 January. 2004 SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM


    Original     		PDF 128Mb x4/x8/x16 110mA 140mA 166MHz. 16Bit A10/AP

    K4S280432E

    Abstract: K4S281632E TL 2262 decoder
    Text: SDRAM 128Mb E-die x4, x8, x16 CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.4 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 February. 2004 SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM


    Original     		PDF 128Mb x4/x8/x16 110mA 140mA 166MHz. A10/AP K4S280432E K4S281632E TL 2262 decoder

    K4S280432E

    Abstract: K4S281632E
    Text: SDRAM 128Mb E-die x4, x8, x16 CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.2 May. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 May. 2003 SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM Revision History


    Original     		PDF 128Mb x4/x8/x16 16Bit A10/AP K4S280432E K4S281632E

    M374S3323ETS-C7A

    Abstract: M366S0924ETS-C7A M366S1723ETS-C7A M366S1723ETU-C7A M366S3323ETS-C7A M366S3323ETU-C7A M374S1723ETS-C7A M374S1723ETU-C7A MA2180
    Text: 64MB, 128MB, 256MB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 128Mb E-die x8, x16 62/72-bit Non ECC/ECC Revision 1.1 May. 2003 Rev. 1.1 May. 2003 64MB, 128MB, 256MB Unbuffered DIMM SDRAM Revision History Revision 1.0 (Nov., 2002)


    Original     		PDF 128MB, 256MB 168pin 128Mb 62/72-bit M374S3323ETS-C7A M366S0924ETS-C7A M366S1723ETS-C7A M366S1723ETU-C7A M366S3323ETS-C7A M366S3323ETU-C7A M374S1723ETS-C7A M374S1723ETU-C7A MA2180

    K4S280432E

    Abstract: M390S1723ET1-C7A M390S1723ETU-C7A M390S3320ET1-C7A M390S3320ETU-C7A M390S3323ET1-C7A
    Text: 128MB, 256MB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 128Mb E-die x4, x8 1,700 / 1,500 / 1,200mil Height & 72-bit ECC Revision 1.1 May. 2003 Rev. 1.1 May. 2003 128MB, 256MB Registered DIMM SDRAM Revision History Revision 1.0 (Nov., 2002)


    Original     		PDF 128MB, 256MB 168pin 128Mb 200mil 72-bit K4S280432E M390S1723ET1-C7A M390S1723ETU-C7A M390S3320ET1-C7A M390S3320ETU-C7A M390S3323ET1-C7A

    PC133 registered reference design

    Abstract: No abstract text available
    Text: PC133 Registered DIMM M390S3323ET1 M390S3323ET1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs GENERAL DESCRIPTION FEATURE • Performance range The Samsung M390S3323ET1 is a 32M bit x 72 Synchronous


    Original     		PDF M390S3323ET1 M390S3323ET1 PC133 32Mx72 16Mx8, 16Mx8 400mil 18-bits PC133 registered reference design

    Untitled

    Abstract: No abstract text available
    Text: SDRAM 128Mb E-die x4, x8, x16 CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.1 April. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 Apr. 2003 SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM Revision History


    Original     		PDF 128Mb x4/x8/x16 16Bit A10/AP

    PC133 registered reference design

    Abstract: No abstract text available
    Text: M390S1723ETU PC133 Low Profile Registered DIMM M390S1723ETU SDRAM DIMM 16Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs FEATURE GENERAL DESCRIPTION • Performance range The Samsung M390S1723ETU is a 16M bit x 72 Synchronous


    Original     		PDF M390S1723ETU M390S1723ETU PC133 16Mx72 16Mx8, 16Mx8 400mil 18-bits PC133 registered reference design

    K4S280432E

    Abstract: M390S1723ET1-C7A M390S1723ETU-C7A M390S3320ET1-C7A M390S3320ETU-C7A M390S3323ET1-C7A
    Text: 128MB, 256MB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 128Mb E-die with 72-bit ECC Revision 1.3 February. 2004 Rev. 1.3 February. 2004 128MB, 256MB Registered DIMM SDRAM Revision History Revision 1.0 November, 2002 - First release


    Original     		PDF 128MB, 256MB 168pin 128Mb 72-bit K4S280432E M390S1723ET1-C7A M390S1723ETU-C7A M390S3320ET1-C7A M390S3320ETU-C7A M390S3323ET1-C7A

    Untitled

    Abstract: No abstract text available
    Text: PC133 Low Profile Unbuffered DIMM M374S3323ETU M374S3323ETU SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs GENERAL DESCRIPTION FEATURE • Performance range The Samsung M374S3323ETU is a 32M bit x 72 Synchronous


    Original     		PDF M374S3323ETU M374S3323ETU PC133 32Mx72 16Mx8, 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: PC133 Low Profile Unbuffered DIMM M366S3323ETU M366S3323ETU SDRAM DIMM 32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs GENERAL DESCRIPTION FEATURE The Samsung M366S3323ETU is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF M366S3323ETU M366S3323ETU PC133 32Mx64 16Mx8, 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: M374S3323ETS PC133 Unbuffered DIMM M374S3323ETS SDRAM DIMM 32Mx72 SDRAM DIMM with ECC based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs GENERAL DESCRIPTION FEATURE • Performance range The Samsung M374S3323ETS is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF M374S3323ETS M374S3323ETS PC133 32Mx72 16Mx8, 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: PC133 Unbuffered DIMM M366S3323ETS M366S3323ETS SDRAM DIMM 32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs GENERAL DESCRIPTION FEATURE The Samsung M366S3323ETS is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF M366S3323ETS M366S3323ETS PC133 32Mx64 16Mx8, 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: PC133 Unbuffered DIMM M366S1723ETS M366S1723ETS SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs GENERAL DESCRIPTION FEATURE The Samsung M366S1723ETS is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF M366S1723ETS M366S1723ETS PC133 16Mx64 16Mx8, 400mil 168-pin