K4S1G0632 Search Results

K4S1G0632 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
K4S1G0632M-TC1H		Samsung Electronics	64M x 4 Bit x 4 Banks Synchronous DRAM		Original	PDF

K4S1G0632 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
K4S1G0632M-TC1H Abstract: No abstract text available Text: K4S1G0632M CMOS SDRAM Stacked 1Gbit SDRAM 64M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Dec. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Dec.2001 K4S1G0632M CMOS SDRAM Revision History	Original	K4S1G0632M K4S1G0632M 864words K4S1G0632M-TC1H	PDF
K8D3216UBC-pi07 Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM	Original	BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm	PDF
RISC-Processor s3c2410 Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH	Original	BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B	PDF
b1a12 Abstract: K4S1G0632B PC133 SDRAM registered DIMM 512MB samsung M390S2950BTU-C7A M390S2953BT1-C7A M390S5658BT1-C7A M390S5658BTU-C7A M390S6553BT1-C7A M390S6553BTU-C7A K4S510832 Text: 512MB, 1GB, 2GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 512Mb B-die with 72-bit ECC Revision 1.0 January 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 January 2004	Original	512MB, 168pin 512Mb 72-bit M390S6553BT1-C7A 512MB b1a12 K4S1G0632B PC133 SDRAM registered DIMM 512MB samsung M390S2950BTU-C7A M390S2953BT1-C7A M390S5658BT1-C7A M390S5658BTU-C7A M390S6553BT1-C7A M390S6553BTU-C7A K4S510832	PDF
PC133 registered reference design Abstract: SS86 Text: Preliminary PC133/PC100 Low profile Registered DIMM M390S5658MTU M390S5658MTU SDRAM DIMM 256Mx72 SDRAM DIMM with PLL & Register based on Stacked 256Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S5658MTU is a 256M bit x 72 Synchronous Dynamic RAM high density memory module. The Sam-	Original	M390S5658MTU M390S5658MTU PC133/PC100 256Mx72 256Mx4, 256Mx4 400mil 18-bits PC133 registered reference design SS86	PDF
DIN 7340 Abstract: B1a12 M390S5658MT1 M390S5658MT1-C75 PC133 registered reference design 256Mx4 Text: Preliminary PC133 Registered DIMM M390S5658MT1 M390S5658MT1 SDRAM DIMM 256Mx72 SDRAM DIMM with PLL & Register based on Stacked 256Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S5658MT1 is a 256M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S5658MT1 consists of eighteen CMOS Stacked	Original	PC133 M390S5658MT1 M390S5658MT1 256Mx72 256Mx4, 256Mx4 400mil 18-bits DIN 7340 B1a12 M390S5658MT1-C75 PC133 registered reference design	PDF
M377S5658MT3 Abstract: M377S5658MT3-C1H M377S5658MT3-C1L 256Mx4 Text: Preliminary PC100 Registered DIMM M377S5658MT3 M377S5658MT3 SDRAM DIMM Intel 1.2 ver Base 256Mx72 SDRAM DIMM with PLL & Register based on Stacked 256Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S5658MT3 is a 256M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S5658MT3 consists of eighteen CMOS Stacked	Original	PC100 M377S5658MT3 M377S5658MT3 256Mx72 256Mx4, 256Mx4 400mil 18-bits M377S5658MT3-C1H M377S5658MT3-C1L	PDF
b1a12 Abstract: B1A10 K4S1G0632D K4S510832d K4S1G0632 B1A0 Text: 1GB, 2GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 512Mb D-die 54 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.	Original	168pin 512Mb medic250 K4S1G0632D 256Mx4 PC133 b1a12 B1A10 K4S510832d K4S1G0632 B1A0	PDF
DIN 7340 Abstract: M390S5658MT1 M390S5658MT1-C75 PC133 registered reference design Text: M390S5658MT1 PC133 Registered DIMM M390S5658MT1 SDRAM DIMM 256Mx72 SDRAM DIMM with PLL & Register based on Stacked 256Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S5658MT1 is a 256M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S5658MT1 consists of eighteen CMOS Stacked	Original	M390S5658MT1 PC133 M390S5658MT1 256Mx72 256Mx4, 256Mx4 400mil 18-bits DIN 7340 M390S5658MT1-C75 PC133 registered reference design	PDF
DIN 7340 Abstract: B1A10 M390S5658MTU M390S5658MTU-C1H M390S5658MTU-C1L M390S5658MTU-C75 PC133 registered reference design b1a12 Text: Preliminary PC133/PC100 Low profile Registered DIMM M390S5658MTU M390S5658MTU SDRAM DIMM 256Mx72 SDRAM DIMM with PLL & Register based on Stacked 256Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S5658MTU is a 256M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S5658MTU consists of eighteen CMOS Stacked	Original	PC133/PC100 M390S5658MTU M390S5658MTU 256Mx72 256Mx4, 256Mx4 400mil 18-bits DIN 7340 B1A10 M390S5658MTU-C1H M390S5658MTU-C1L M390S5658MTU-C75 PC133 registered reference design b1a12	PDF
M377S5658MT3-C1H Abstract: M377S5658MT3 M377S5658MT3-C1L samsung capacitance Manufacturing location b1a12 Text: PC100 Registered DIMM M377S5658MT3 M377S5658MT3 SDRAM DIMM Intel 1.2 ver Base 256Mx72 SDRAM DIMM with PLL & Register based on Stacked 256Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S5658MT3 is a 256M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S5658MT3 consists of eighteen CMOS Stacked	Original	PC100 M377S5658MT3 M377S5658MT3 256Mx72 256Mx4, 256Mx4 400mil 18-bits M377S5658MT3-C1H M377S5658MT3-C1L samsung capacitance Manufacturing location b1a12	PDF
K4S1G0632 Abstract: uA 741 op CA12 RA12 K4S1G0732D K4S1G0632D Text: SDRAM stacked 1Gb D-die x4, x8 SDRAM stacked 1Gb D-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	A10/AP K4S1G0632 uA 741 op CA12 RA12 K4S1G0732D K4S1G0632D	PDF