K3567 VOLTAGE Search Results

K3567 VOLTAGE Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
DF2B5M4ASL		Toshiba Electronic Devices & Storage Corporation	TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2)
DF2B6M4ASL		Toshiba Electronic Devices & Storage Corporation	TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2)
DF2B5PCT		Toshiba Electronic Devices & Storage Corporation	TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2)
DF2B7PCT		Toshiba Electronic Devices & Storage Corporation	TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2)
TPD4207F		Toshiba Electronic Devices & Storage Corporation	Intelligent power device 600V (High voltage PWM DC brushless motor driver)

K3567 VOLTAGE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor k3567 Abstract: k3567 k3567 voltage k3567 transistor 2SK3567 Text: 2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3567 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)	Original	2SK3567 transistor k3567 k3567 k3567 voltage k3567 transistor 2SK3567	PDF
k3567 Abstract: transistor k3567 2sk3567 2SK3567 equivalent k3567 transistor k3567 B L k3567 voltage Text: 2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3567 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)	Original	2SK3567 k3567 transistor k3567 2sk3567 2SK3567 equivalent k3567 transistor k3567 B L k3567 voltage	PDF
transistor k3567 Abstract: K3567 k3567 transistor k3567 voltage 2SK3567 Text: 2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3567 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V)	Original	2SK3567 transistor k3567 K3567 k3567 transistor k3567 voltage 2SK3567	PDF
transistor k3567 Abstract: k3567 2sk3567 2SK3567 equivalent k3567 transistor 288MH k3567 B L k3567 voltage marking code TC Text: 2SK3567 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3567 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.5 S (typ.)	Original	2SK3567 transistor k3567 k3567 2sk3567 2SK3567 equivalent k3567 transistor 288MH k3567 B L k3567 voltage marking code TC	PDF