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    Vishay Intertechnologies CRCW04021K50FKED

    Thick Film Resistors - SMD 1/16watt 1.5Kohms 1%
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    TTI CRCW04021K50FKED Reel 2,040,000 10,000
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    Amphenol Corporation 91-577769-61H

    Circular MIL Spec Connector CTV 61C 61#20 SKT PLUG
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    TTI 91-577769-61H Each 25 1
    • 1 $351.77
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    Amphenol Corporation 10-565814-18S

    Circular MIL Spec Connector TV 18C 18#20 SKT PLUG
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    TTI 10-565814-18S Each 3 1
    • 1 $104.64
    • 10 $90.96
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    Vishay Intertechnologies NTCLG100E2104JB

    NTC Thermistors 100Kohms 5%
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    TTI NTCLG100E2104JB Bulk 4,000
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    Dialight 5615701801F

    LED Circuit Board Indicators 5MM STAND-OFF 0 600" YEL WC
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    TTI 5615701801F Bulk 475
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    K3374 Datasheets Context Search

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    k3374

    Abstract: 2SK3374
    Text: K3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3374 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		PDF 2SK3374 k3374 2SK3374

    k3374

    Abstract: 2SK3374
    Text: K3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3374 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) •


    Original     		PDF 2SK3374 k3374 2SK3374

    k3374

    Abstract: 2SK3374
    Text: K3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type F-MOSV K3374 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 W (typ.) · High forward transfer admittance: ïYfsï = 0.8 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		PDF 2SK3374 k3374 2SK3374

    k3374

    Abstract: 2SK3374
    Text: K3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3374 Switching Regulator Applications • Unit: mm Low drain-source ON-resistance: RDS (ON) = 3.7 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.7 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		PDF 2SK3374 k3374 2SK3374

    k3374

    Abstract: 2SK3374
    Text: K3374 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSV K3374 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 4.0 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 0.8 S (標準)


    Original     		PDF 2SK3374 k3374 2SK3374

    K3374

    Abstract: No abstract text available
    Text: K3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3374 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) •


    Original     		PDF 2SK3374 to150 K3374

    K3374

    Abstract: 2SK3374
    Text: K3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3374 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		PDF 2SK3374 K3374 2SK3374

    K3374

    Abstract: 2SK3374
    Text: K3374 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSV K3374 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 3.7 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 0.7 S (標準)


    Original     		PDF 2SK3374 K3374 2SK3374