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    K2961 TRANSISTOR Search Results

    K2961 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K2961 TRANSISTOR Datasheets Context Search

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    k2961

    Abstract: transistor k2961 2sk2961 K296 k2961 Transistor transistor 2sk2961 2sK2961 equivalent
    Text: 2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK2961 k2961 transistor k2961 2sk2961 K296 k2961 Transistor transistor 2sk2961 2sK2961 equivalent

    K2961

    Abstract: transistor k2961 k2961 Transistor
    Text: 2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application z Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK2961 K2961 transistor k2961 k2961 Transistor

    K2961

    Abstract: transistor k2961 k2961 Transistor 2SK2961
    Text: 2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application z Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK2961 K2961 transistor k2961 k2961 Transistor 2SK2961

    K2961

    Abstract: transistor k2961 2sK2961 equivalent 2SK2961
    Text: 2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application z Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK2961 K2961 transistor k2961 2sK2961 equivalent 2SK2961