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Catalog Datasheet	MFG & Type	PDF	Document Tags
K25A10K Abstract: TK25A10K TK25A10K3 Text: K25A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV K25A10K3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 31 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 50 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 100 V)	Original	PDF	TK25A10K3 K25A10K TK25A10K TK25A10K3
Untitled Abstract: No abstract text available Text: K25A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV K25A10K3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 31 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 50 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 100 V)	Original	PDF	TK25A10K3
K25A10K Abstract: TK25A10K3 k25a10 TK25A10K Text: K25A10K3 東芝電界効果トランジスタシリコンNチャネルMOS形 U-MOSⅣ K25A10K3 ○ スイッチングレギュレータ用単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。: \|Yfs\|= 50 S (標準)	Original	PDF	TK25A10K3 SC-67 2-10U1B K25A10K TK25A10K3 k25a10 TK25A10K
K25A10K Abstract: No abstract text available Text: K25A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV K25A10K3 Swiching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 31 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 50 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 100 V)	Original	PDF	TK25A10K3 K25A10K
K25A10K Abstract: TK25A10K3 Text: K25A10K3 東芝電界効果トランジスタシリコンNチャネルMOS形 U-MOSⅣ K25A10K3 ○ スイッチングレギュレータ用単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。: \|Yfs\|= 50 S (標準)	Original	PDF	TK25A10K3 SC-67 2-10U1B K25A10K TK25A10K3