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    K1359 Price and Stock

    Daniels Manufacturing Corporation (DMC) K1359

    Crimpers / Crimping Tools POSITIONER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics K1359
    • 1 $118.66
    • 10 $108.77
    • 100 $108.77
    • 1000 $108.77
    • 10000 $108.77
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    YAGEO Corporation RWP502FK-13-590KAA

    Thick Film Resistors - SMD 2.2W 590000 Ohms 590K 1% AEC-Q200
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RWP502FK-13-590KAA
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.393
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    YAGEO Corporation RWP502FK-13-590RAA

    Thick Film Resistors - SMD 2.2W 590 Ohms 590R 1% AEC-Q200
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RWP502FK-13-590RAA
    • 1 -
    • 10 -
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    • 10000 $0.393
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    YAGEO Corporation RWP502FK-13-59KAA

    Thick Film Resistors - SMD 2.2Wat 59000 Ohms 59K 1% AEC-Q200
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RWP502FK-13-59KAA
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.393
    		Get Quote

    YAGEO Corporation RWP502FK-13-59RAA

    Thick Film Resistors - SMD 2.2Wat 59 Ohms 59R 1% AEC-Q200
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RWP502FK-13-59RAA
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.393
    		Get Quote
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    K1359 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k1359

    Abstract: K135 2SK1359
    Text: K1359 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII K1359 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK1359 k1359 K135 2SK1359

    K1359

    Abstract: 2SK1359
    Text: K1359 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII K1359 DC−DC Converter and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) l High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK1359 K1359 2SK1359

    k1359

    Abstract: K135 2SK1359 SC-65
    Text: K1359 東芝電界効果トランジスタ .5 シリコンNチャネルMOS形 π−MOSⅡ K1359 ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 3.0Ω (標準) z 順方向伝達アドミタンスが高い。


    Original     		PDF 2SK1359 SC-65 2-16C1B VDD400 K1359 k1359 K135 2SK1359 SC-65

    2SK135

    Abstract: No abstract text available
    Text: K1359 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII K1359 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK1359 2SK135

    Untitled

    Abstract: No abstract text available
    Text: K1359 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII K1359 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK1359

    K1359

    Abstract: 2sk1359
    Text: K1359 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII K1359 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK1359 2-16C1B K1359 2sk1359

    k1359

    Abstract: 2SK1359 K135
    Text: K1359 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII K1359 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK1359 k1359 2SK1359 K135

    Untitled

    Abstract: No abstract text available
    Text: K1359 TOSHIBA Field Effect Transistor .5 Silicon N Channel MOS Type −MOSII K1359 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Unit: mm


    Original     		PDF 2SK1359

    Untitled

    Abstract: No abstract text available
    Text: K1359 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII K1359 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK1359

    K1359

    Abstract: 2SK1359 VDSS1000V
    Text: K1359 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSII K1359 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)


    Original     		PDF 2SK1359 K1359 2SK1359 VDSS1000V

    Raytheon Company

    Abstract: cathode ray CK1359P radar tube cathode ray tube resolution
    Text: Tech.nical Infox*rn.a,tion TECHNICAL INFORMATION SERVICE K1359P-A CATHODE RAY TUBE MECHANICAL DATA The type K1359P—A is a 16—inch e le ctro sta tic focus and magnetic deflection, cathode—ray tube suitable for radar applications. A low—voltage e le ctro sta tic focus lens is employed, designed to


    OCR Scan     		PDF CK1359Pâ CK1359P2A CK1359P7A CK1359P-A Raytheon Company cathode ray CK1359P radar tube cathode ray tube resolution