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    K A 431 TRANSISTOR Search Results

    K A 431 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K A 431 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5962L0053605VYC

    Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
    Text: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A


    Original     		PDF MIL-HDBK-103AJ MIL-HDBK-103AH MIL-HDBK-103AJ 5962L0053605VYC 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA

    transistor w 431

    Abstract: TRANSISTOR BC 431 TRANSISTOR 431 transistor 431 c 431 transistor a 431 transistor y 431 transistor transistor bc 488 bc 106 transistor w 431 transistor
    Text: BC 431 'W Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar AF Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: • Hohe Sperrspannung Features: • High reverse voltage • Verlustleistung 6:25 mW


    OCR Scan     		PDF

    DIODE 433

    Abstract: tl 431 R 433 A F433 IRFF430 IRFF431 IRFF432 IRFF433 AC15A
    Text: SILICÔNIX INC IflE D "Silicon_ • ÔHS473S G ü m ô S Î 0 ■ IRFF430/431/432/433 incorporated Xf^ VTSiliconix ¡1 N-Channel Enhancement Mode Transistors TVZPi-D0! TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BRJDSS "W> Id (A IRFF430 500 1.5 2.75


    OCR Scan     		PDF IRFF430/4317432/433 IRFF430 IRFF431 IRFF432 IRFF433 O-205AF T-39-Ã DIODE 433 tl 431 R 433 A F433 AC15A

    TFK u 116

    Abstract: TFK 236 TRANSISTOR BC 119 transistor BC 236 6tfk BC431 CES10116 tfk 106 BC432 6 TFK 106
    Text: Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar A F Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Verlustleistung 625 mW


    OCR Scan     		PDF

    Philips diode tFR

    Abstract: BY328 BY-328
    Text: SLE ]> PHILIPS INTERNATIONAL 711DÔ2b 0040441 bbT • PHIN BY328 SbE D T -O t ' 1 7 32 kHz PARALLEL EFFICIENCY DIODE Double-diffused glass passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as an efficiency diode in transistorized horizontal deflection circuits of television


    OCR Scan     		PDF BY328 BY328 7Z77830 7Z77828 BY328. Philips diode tFR BY-328

    transistor c 6073

    Abstract: TRANSISTOR 431p transistor c 6073 circuit diagram ptc 820 TF PTC PTC886 6063 T0 ptc 205 ptc 500 ptc b
    Text: MICROSEMI CORP/POWER ÖSD D • bllSTSG 00003b2 2 NPN Darlington Transistors TO-2Q4MA TO ' 3 Part Number Ic Amps PTC 10002 PTC 10003 PTC 10006 PTC 10007 PTC 6251 PTC 6252 PTC 6253 PTC 6000 PTC 6001 PTC 6002 PTC 6003 PTC 10000 PTC 10001 PTC 10004 PTC 10005


    OCR Scan     		PDF 00003b2 TQ-204MA PTC102 transistor c 6073 TRANSISTOR 431p transistor c 6073 circuit diagram ptc 820 TF PTC PTC886 6063 T0 ptc 205 ptc 500 ptc b

    MGF4919

    Abstract: mgf4918 mgf4914 MGF4910 gs 431 transistor
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910E Series _ SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 9 1 0 E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to


    OCR Scan     		PDF F4910E F4914E F4918E F4919E MGF4910E GF4914E GF4919E MGF4919 mgf4918 mgf4914 MGF4910 gs 431 transistor

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN5126 ._ 2SC5238 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications F eatures • High speed tf = 100ns typ . • High breakdown voltage (Vcbo = 1500V).


    OCR Scan     		PDF EN5126 2SC5238 100ns 90195YK TA-0415 D0S0412

    431 transistors

    Abstract: c363t transistor SE 431
    Text: Transistors Digital transistors built-in resistors DTC363TK / DTC363TS • F e a tu re s • E x te rn a l d im en sion s (Units: mm) In a d d itio n to th e fe a tu re s o f re g u la r digital transistors, DTC363TK 1) L o w VcE(sat) m a k e s th e s e tra n s is ­


    OCR Scan     		PDF DTC363TK DTC363TS 600mA) SC-59 DTC363TS DTC363TK/DTC363TS 100ml 431 transistors c363t transistor SE 431

    f585

    Abstract: bfn21 62702-F585 transistor sl 431
    Text: PNP Silicon High-Voltage Transistor • • • • • BFN 21 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-em itter saturation voltage Low capacitance Complementary type: BFN 20 NPN Type Marking


    OCR Scan     		PDF 62702-F585 62702-F1059 f585 bfn21 62702-F585 transistor sl 431

    UFN432

    Abstract: mosfet UFN432 UFN 432 UFN431 UFN433
    Text: POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel UFN430 UFN431 UFN432 UFN433 FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance.


    OCR Scan     		PDF UFN430 UFN431 UFN432 UFN433 UFN430 UFN431 UFN432 mosfet UFN432 UFN 432 UFN433

    Untitled

    Abstract: No abstract text available
    Text: 32E V m A23b320 PNP Silicon High-Voltage Transistor Q O lb ö S S 3 « S IP BFN 21 SIEMENS/ SPCLi SEMICONDS T- 21-0,3 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage


    OCR Scan     		PDF A23b320 Q62702-F585 Q62702-F1059 23b320 102mA

    Untitled

    Abstract: No abstract text available
    Text: KSR2113 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Buill In • Switching circuit, Inverter, Interface circuit Driver circuit SOT-23 • Built in bias Resistor(R ,=2.2K ß, R2= 47 K fl) • Complement to KSR1113 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF KSR2113 OT-23 KSR1113

    2sd1273

    Abstract: 2SD1273A
    Text: Power Transistors 2SD1273, 2SD1273A 2S D 1273, 2S D 1273A Silicon NPN Triple-Diffused Planar Type High DC C urrent Gain Package D im ensions Power A m plifier I i f e , • Features • H ig h D C c u r r e n t g a in (hi-t) • G o o d lin e a r ity o f D C c u r r e n t g a in (Iife )


    OCR Scan     		PDF 2SD1273, 2SD1273A 2SD1273 -55ower 2SD1273A

    Untitled

    Abstract: No abstract text available
    Text: N AflER PHILIPS/DISCRETE b^E D m bb53^31 DDSb4b5 53b IAPX BY328 32 kHz PARALLEL EFFICIENCY DIODE Double-diffused glass passivated rectifier diode in an hermetically sealed axial-leaded glass envelope, intended for use as an efficiency diode in transistorized horizontal deflection circuits of television


    OCR Scan     		PDF BY328 bbS3T31 BY328.

    2SC3508

    Abstract: 2SC350 2SC3506 2SC350E
    Text: Power Transistors ^32052 2SC350¿ DDlb433 346 2SC3506 Silicon PNP Triple-Diffused Planar Type Package Dim ensions High Speed Switching • Features Unit ! mm 5.2.max. ^ 15-Smax. 6.9m in. • High speed switching 3.2' • High collector-base voltage Vcbo


    OCR Scan     		PDF b13Efi5E DDlb433 2SC350Ã 2SC3506 001bM3M 2SC3508- 10VXJA 100x100x2mm b132fl5E 001b435 2SC3508 2SC350 2SC3506 2SC350E

    2SB1372

    Abstract: 2SD2065
    Text: Power Transistors 2SB 13 7 2 2SB 1372 Silicon PNP Triple-Diffused Planar Type P ackage Dim ensions High Pow er Amplifier C om plem entary Pair with 2 S D 2 0 6 5 U nit : ram • Features o r • V ery g o o d lin e a rity of DC c u r r e n t gain I i f e


    OCR Scan     		PDF 2SB1372 2SD2065 ib307 2SB1372 2SD2065

    h a 431 transistor

    Abstract: DARLINGTON ESM 30 diode ESM 5045D ESM5045D 431E ESM5045DV
    Text: PH I L I P S INTERNATIONAL 4SE D E3 711002b 0D31237 J 7 SPHIN ESM5045D V T -3 3 ~ 2 ? SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives, converters, switch mode power supplies (SMPS) and uninterruptable power supplies (UPS).


    OCR Scan     		PDF 711002b 0D31237 ESM5045D OT227B. Csat/50 Csat/50--VBEoff h a 431 transistor DARLINGTON ESM 30 diode ESM 5045D 431E ESM5045DV

    2N2297

    Abstract: transistor 2N2297 transistor w 431
    Text: 2N2297 PHILIP S IN TE RN AT IO NA L 71100 2b SbE D 00425T4 bbT • PHIN SILICON PLANAR EPITAXIAL TRANSISTO R N-P-N transistor intended for large signal h.f. and v.h.f. amplifier applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter


    OCR Scan     		PDF 2N2297 711002b 00425T4 D04S5 2N2297 transistor 2N2297 transistor w 431

    marking 557 SOT143

    Abstract: No abstract text available
    Text: • bbSBTBl 0024551 557 « A P X N AMER PHILIPS/DISCRETE BCV63 BCV63B b?E D SILICON PLANAR TRANSISTOR Double N-P-N transistor in a plastic SOT-143 envelope. Intended for Schmitt-trigger applications. P-N-P complement is the BCV64. QUICK REFERENCE DATA transistor


    OCR Scan     		PDF BCV63 BCV63B OT-143 BCV64. bbS3R31 0Q3M553 marking 557 SOT143

    ESM5045D

    Abstract: No abstract text available
    Text: N AMER P H IL IP S /D IS C R E T E b'lE ]> bbS3T31 0D2flb0b 053 H A P X ESM5045D V _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A_ _ SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives,


    OCR Scan     		PDF bbS3T31 ESM5045D Csat/50

    ESM5045D

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE fc^E S> bb53^31 OOEflbOb 0 S3 H A P X ESM5045D V SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives, converters, switch mode power supplies (SMPS) and uninterruptable power supplies (UPS).


    OCR Scan     		PDF ESM5045D OT227B. Csat/50;

    2SD1273

    Abstract: 2SD1273A 100 HFK
    Text: Power Transistors 2SD1273, 2SD1273A 2SD1273, 2SD1273A Silicon NPN Triple-Diffused Planar Type • Package D im ensions High DC C urrent Gain Iife , Power A m plifier —< ■ Features Unit ! mm • High DC cu rren t gain (hFt) • Good linearity of DC c u rre n t gain Qife)


    OCR Scan     		PDF 2SD1273, 2SD1273A 2SD1273 2SD1273A 100 HFK

    transistor ap 431

    Abstract: transistor TF 431 photo transistor BN503 PS503
    Text: A C INTERFACE INC IDE D | 0023303 0000475 3 | PS503 r-ïi-èi STANLEY PHOTO TRANSISTOR • FEATURES 1 High photo current (Typ. 4mA at Ee = 10mW/cm2) (2) Best suited for photointerrupter (3) Efficient when used in combination with IR LED, BN503 Package Dimensions


    OCR Scan     		PDF PS503 10mW/cm2) BN503 transistor ap 431 transistor TF 431 photo transistor BN503 PS503