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    K 741 MOSFET Search Results

    K 741 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    K 741 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    intel 8080 microprocessor

    Abstract: AM9016 Voltage multiplier using 741 opamp Si7660 SCHEMATIC circuit scr oscillator Voltage Doubler with 555 circuit Si7661 oscillator circuit with op amp 741 AN401 oscillator circuit with op amp 741 its output
    Text: AN401 Siliconix Theory and Applications of the Si7660 and Si7661 Voltage Converters Doyle L. Stack Introduction equalized. The oscillator/toggle then switches again, and the process starts over. Many times a simple digital circuit design can be greatly complicated by the needs of just one or two of the onĆboard


    Original     		PDF AN401 Si7660 Si7661 Si7661 intel 8080 microprocessor AM9016 Voltage multiplier using 741 opamp SCHEMATIC circuit scr oscillator Voltage Doubler with 555 circuit oscillator circuit with op amp 741 AN401 oscillator circuit with op amp 741 its output

    CMT10N10

    Abstract: CMT10N10N220
    Text: CMT10N10 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced MOSFET is designed to withstand high ! Avalanche Energy Specified energy in avalanche and commutation modes. The new ! Source-to-Drain Diode Recovery Time Comparable to a energy efficient design also offers a drain-to-source diode


    Original     		PDF CMT10N10 CMT10N10 CMT10N10N220

    um 741

    Abstract: LS 741 a 741 j
    Text: N-CHANNEL POWER MOSFETS IRFS740/741/742/743 FEATURES • • • • • • • Lower Rds O N Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability


    OCR Scan     		PDF IRFS740/741/742/743 IRFS741 IRFS740 IRFS742 IRFS743 um 741 LS 741 a 741 j

    ci 741

    Abstract: tl 741 IRFS740 742 mosfet CI 4017 IRFS743 LS 741 mosfet 350v 10A te 4017 IRFS741
    Text: SA MS UN G E L E C T R O N I C S INC b7E ]> • 0 D 1 7 3 7 4 034 N-CHANNEL POWER MOSFETS IRFS740/741/742/743 FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast sw itching times Rugged polysilicon gate cell structure Lower input capacitance


    OCR Scan     		PDF 0D17374 IRFS740/741/742/743 O-220F IRFS740/741/742/743 IRFS740 IRFS741 IRFS742 IRFS743 ci 741 tl 741 742 mosfet CI 4017 LS 741 mosfet 350v 10A te 4017

    IRF740

    Abstract: diode lt 341 IRFP340 LT 741 S IRF740 400V 10A power MOSFET IRF740 irf741 irf742 irf740 mosfet IRFP341
    Text: IRF740/741/742/743 IRFP340/341/342/343 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area


    OCR Scan     		PDF IRF740/741/742/743 IRFP340/341/342/343 40/IRFP34Û IRF741-IRFP341 IRF742/IRFP342 IRF743/IRFP343 IRF740 diode lt 341 IRFP340 LT 741 S IRF740 400V 10A power MOSFET IRF740 irf741 irf742 irf740 mosfet IRFP341

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRF740/741 FEATURES T O -2 2 0 • Lower R d s ON • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF IRF740/741 IRF740 IRF741

    irf740

    Abstract: irf740 mosfet power MOSFET IRF740 IRF740 ir irf741 F7403
    Text: N-CHANNEL POWER MOSFETS IRF740/741/742/743 FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysllicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRF740/741/742/743 IRF740 IRF741 IRF742 IRF743 irf740 mosfet power MOSFET IRF740 IRF740 ir F7403

    IRFS740

    Abstract: IRFS741 uA 741 NC K 741 MOSFET
    Text: N-CHANNEL POWER MOSFETS IRFS740/741 FEATURES • Lower R ds<oni • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended sale operating area • Improved high temperature reliability


    OCR Scan     		PDF IRFS740/741 IRFS740 IRFS741 to-220f 7Tb4142 00EA3E0 uA 741 NC K 741 MOSFET

    Untitled

    Abstract: No abstract text available
    Text: IRF740/741/742/743 IRFP340/341/342/343 SAMSUNG ELECTRONICS INC N-CHANNEL POWER MOSFETS SÎ16K b?E D FEATURES • • • • • • • Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance


    OCR Scan     		PDF IRF740/741/742/743 IRFP340/341/342/343 F740/IRFP340 IRF741 /IRFP341 F742/IRFP342 F743/IRFP343 IRF740 IRFP340 IRF741

    IR F740

    Abstract: No abstract text available
    Text: • M3 0 SS7 1 00S40SÖ 23 HARRIS 3fl4 ■ HAS IRF740/741/74 2/743 IRF740R/741R/742R/743R N-Channel Power MOSFETs Avalanche Energy Rated* A u gu st 1 9 9 1 Package Features T 0 -2 2 0 A B • 8A and 10A, 3 5 0 V - 4 0 0 V T O P V IE W • r o s ° n = 0 .5 5 f i and 0 .8 f i


    OCR Scan     		PDF 00S40SÃ IRF740/741/74 IRF740R/741R/742R/743R IRF740, IRF741, IRF742, IRF743 IRF740R, IRF741R, IRF742R IR F740

    742r

    Abstract: F740 F742 F741 742-R IRF P CHANNEL MOSFET 10a
    Text: 23 H A R R IS IR F740/741/742/743 IRF740R/741R/742R/743R N -Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package F e a tu re s T O -2 2 0 A B • 8A and 10A, 350V - 400V TOP VIEW • rD S °n = 0 .5 5 fi and 0.8J1 • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF F740/741/742/743 IRF740R/741R/74 IRF740, IRF741, IRF742, IRF743 IRF740R, IRF741R, IRF742R IRF743R 742r F740 F742 F741 742-R IRF P CHANNEL MOSFET 10a

    tl 741

    Abstract: ic tl 741 LF13741N equivalent ic of ca 3130 current to voltage converter using 741 LF13741H lf13741 OF IC 741 N06E DROPINRE
    Text: LF13741 ZWA National Æ Ü Semiconductor LF13741 Monolithic JFET Input Operational Amplifier Low input noise current High input impedance Familiar operating characteristics General Description The LF13741 is a 741 with BI-FET input followers on the same die. Familiar operating characteristics—those of a


    OCR Scan     		PDF LF13741 LF13741 741--with TL/H/9296-25 TL/H/8296-27 TL/H/9296-29 tl 741 ic tl 741 LF13741N equivalent ic of ca 3130 current to voltage converter using 741 LF13741H OF IC 741 N06E DROPINRE

    741 as buffer amplifier

    Abstract: wein bridge oscillator high current fet amplifier schematic ICL8007 Monolithic Transistor Pair 741 opamp detector circuit using 741 OP-AMP wein bridge oscillator FET fet 741 wein bridge circuit
    Text: G E SOLID STATE DS T-1R -IS A005 D E | 3fl7SDfll □ □E3t,S2 □ The IC L 8 0 0 7 — A High Perform ance FET — Inp u t Operational A m p lifier During the last 10 years the Field Effect Transistor has become the accepted device fo r amplifying low level


    OCR Scan     		PDF 023LS2 ICL8007 ICL8007, AN-30, IH5009 10-79-00B 741 as buffer amplifier wein bridge oscillator high current fet amplifier schematic Monolithic Transistor Pair 741 opamp detector circuit using 741 OP-AMP wein bridge oscillator FET fet 741 wein bridge circuit

    marking BSs mosfet

    Abstract: No abstract text available
    Text: SIPMOS N Channel MOSFET BSS 131 • SIPMOS - enhancement mode • Drain-source voltage K>* = 240V • Continuous drain current / 0 = 0.10A • Drain-source on-resistance • Total power dissipation %«on> = 16.00 PD = 0.36W Type Marking Ordering code for versions on 8 mm-tape


    OCR Scan     		PDF Q62702-S565 fp20yi marking BSs mosfet

    LF13741

    Abstract: tl 741 741 adjustable current limiter equivalent diode for R2C Low Drift Peak Detector 92963 lm3333 LF13741N 1011fl 92967
    Text: LF13741 zn National £ i Semiconductor BI-FET I I Technology -LF13741 Monolithic JFET Input Operational Amplifier General Description The LF13741 is a 741 with BI-FET™ input followers on the same die. Familiar operating characteristics—those of a


    OCR Scan     		PDF LF13741 --------------------LF13741 LF13741 741--with 10jtA TL/H/9296-28 VTL/H/9296-27 tl 741 741 adjustable current limiter equivalent diode for R2C Low Drift Peak Detector 92963 lm3333 LF13741N 1011fl 92967

    ST102

    Abstract: LS38 Y-H8 846 transistor
    Text: SILICON TRANSI STOR CORP SbE D 0254022 OOOQ^TQ 31N « S T C SILICON TRANSISTOR CORPORATION Katrina Road Chelmsford, Massachusetts 01824 Telephone: 508-256-3321 FAX: 508-250-1046 A POWERHOUSE 400 VOLTS 0.33 OHMS QUAD N CHANNEL POWER MOSFET DEVICE TYPE STQ402


    OCR Scan     		PDF STQ402 ST102 MIL-S-19500 ST102 LS38 Y-H8 846 transistor

    Untitled

    Abstract: No abstract text available
    Text: 35E D • fl23k3EG QG171bl fl « S I P SIPMOS N Channel MOSFET BSS131 T ' 3 S - ‘XS' SIEMENS/ SPCL-, SEMICONDS • SIPMOS - enhancement mode • Drain-source voltage Vfct = 240V • Continuous drain current l 0 = 0.10A • Oraln-source on-reslstance • Total power dissipation


    OCR Scan     		PDF fl23k3EG QG171bl BSS131 Q62702-S565 53b32G 00171bb

    CA3088

    Abstract: triangle wave generator using 741 Wien Bridge Oscillator with IC 741 12v dc cdi schematic diagram a3140 dip-8 CA3140S Wien Bridge Oscillator sine 50 hz ICAN-6668 CA3140AM ca3140
    Text: fX 3 H U U A R R CA3140 IS S E M I C O N D U C T O R BiMOS Operational Amplifier with MOSFET Input/Bipolar Output Description The CA3140A and CA3140 are integrated circuit operational amplifiers that combine the advantages of high voltage PMOS transistors with


    OCR Scan     		PDF CA3140 CA3140A CA3140 CA3130 50mV/Div 200ns/Div 200ns/Div CA3088 triangle wave generator using 741 Wien Bridge Oscillator with IC 741 12v dc cdi schematic diagram a3140 dip-8 CA3140S Wien Bridge Oscillator sine 50 hz ICAN-6668 CA3140AM

    2 volt zener

    Abstract: CA314Q REGULATOR IC 7915 CA3140S power supply in ic 7915 circuit diagram ano51 D2201 IC Generator to 10MHz triangle CS27a ca314 DE
    Text: HA RR IS S E M I C O N D S E C T O R H a r r i 4QE ]> • 4302571 0031746 7 BIHAS T-K-IS s C A 3 1 4 0 A C A 3 1 4 0 BiMOS Operational Amplifiers with MOSFET Input/Bipolar Output August 19 9 1 Features Description • MOSFET input Stage The CA3140A and CA3140 are Integrated-circutt


    OCR Scan     		PDF CA3140A CA3140 CA3130 CA3140H. 2 volt zener CA314Q REGULATOR IC 7915 CA3140S power supply in ic 7915 circuit diagram ano51 D2201 IC Generator to 10MHz triangle CS27a ca314 DE

    PIN DIAGRAM OF IC CA3140

    Abstract: CA3140 6 CA3140 S
    Text: m CA3140 HARRIS S E M I C O N D U C T O R BiMOS Operational Amplifier with MOSFET Input/Bipolar Output Description MOSFET Input Stage - Very High Input Impedance Z|N -1.5Tn(Typ.) - Very Low Input Current (I) -10pA (Typ.) at ±15V - Wide Common Mode Input Voltage Range


    OCR Scan     		PDF CA3140 -10pA CA3140A 140kHz PIN DIAGRAM OF IC CA3140 CA3140 6 CA3140 S

    liquid level sensor schematic diagram

    Abstract: CA3240E
    Text: h a r r i s a S E M I C O N D U C T O R Q o a n M M , \ f Dual BiMOS Operational Amplifier with MOSFET Inpu/Bipolar Output March 1993 Features Description • Dual Version of CA3140 The CA3240A and CA3240 are dual versions of the popular CA3140 series integrated circuit operational


    OCR Scan     		PDF CA3240A CA3240 CA3140 CA3240, CA3240A CA3240E CA3140) liquid level sensor schematic diagram

    ca3240 application circuit

    Abstract: ca3240a thyristor tt 142 n
    Text: ¡3 CA3240, CA3240A Dual, 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output Features Description • Dual Version of CA3140 The CA3240A and CA3240 are dual versions of the popular CA3140 series integrated circuit operational amplifiers. They


    OCR Scan     		PDF CA3240, CA3240A CA3240A CA3240 CA3140 1N914 ca3240 application circuit thyristor tt 142 n

    Untitled

    Abstract: No abstract text available
    Text: • International Rectifier Data Sheet No. PD-6.078 IR 04 H420 HIGH VOLTAGE HALF-BRIDGE Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Output Power MOSFETs in half-bridge configuration 500V Rated Breakdown Voltage High side gate drive designed for bootstrap operation


    OCR Scan     		PDF IR0430 5M-1982.

    RD202

    Abstract: No abstract text available
    Text: International ! - R Rectifier HEXFET Power MOSFET • • • • • INR MÛ554S2 QGlSlbQ PD-9.651A IRFI740G INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance


    OCR Scan     		PDF 554S2 IRFI740G O-220 4fiSS452 RD202