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    K 2225 TRANSISTOR Search Results

    K 2225 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    K 2225 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CDR03 receiver module

    Abstract: CDR03 receiver 9926 mosfet Optoelectronics Device data Zener diode smd marking code 621 "Piezoelectric Sensor" sun chemical un 1210 array resistor 9926 ceramic disc 104 aec capacitors Zener diode smd marking code w1
    Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book surface mount MUltilayer Ceramic chip capacitors vishay vse-db0097-0805 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vse-db0097-0805 CDR03 receiver module CDR03 receiver 9926 mosfet Optoelectronics Device data Zener diode smd marking code 621 "Piezoelectric Sensor" sun chemical un 1210 array resistor 9926 ceramic disc 104 aec capacitors Zener diode smd marking code w1

    HEP89

    Abstract: HP89 MC10EP89 MC10EP89D MC10EP89DR2 MC10EP89DT MC10EP89DTR2 transistor tt 2170
    Text: MC10EP89 3.3V / 5VĄECL Coaxial Cable Driver The MC10EP89 is a differential fanout gate specifically designed to drive coaxial cables. The device is especially useful in digital video broadcasting applications; for this application, since the system is polarity free, each output can be used as an independent driver. The


    Original     		PDF MC10EP89 MC10EP89 r14525 MC10EP89/D HEP89 HP89 MC10EP89D MC10EP89DR2 MC10EP89DT MC10EP89DTR2 transistor tt 2170

    MC10EP89

    Abstract: No abstract text available
    Text: MC10EP89 3.3V / 5V ECL Coaxial Cable Driver The MC10EP89 is a differential fanout gate specifically designed to drive coaxial cables. The device is especially useful in digital video broadcasting applications; for this application, since the system is polarity free, each output can be used as an independent driver. The


    Original     		PDF MC10EP89 r14525 MC10EP89/D

    HEP89

    Abstract: HP89 MC10EP89 MC10EP89D MC10EP89DR2 MC10EP89DT MC10EP89DTR2
    Text: MC10EP89 3.3V / 5VĄECL Coaxial Cable Driver The MC10EP89 is a differential fanout gate specifically designed to drive coaxial cables. The device is especially useful in digital video broadcasting applications; for this application, since the system is polarity free, each output can be used as an independent driver. The


    Original     		PDF MC10EP89 MC10EP89 r14525 MC10EP89/D HEP89 HP89 MC10EP89D MC10EP89DR2 MC10EP89DT MC10EP89DTR2

    hep89

    Abstract: transistor tt 2170 HP89 MC10EP89 MC10EP89D MC10EP89DR2 MC10EP89DT MC10EP89DTR2
    Text: MC10EP89 3.3V / 5VĄECL Coaxial Cable Driver The MC10EP89 is a differential fanout gate specifically designed to drive coaxial cables. The device is especially useful in digital video broadcasting applications; for this application, since the system is polarity free, each output can be used as an independent driver. The


    Original     		PDF MC10EP89 MC10EP89 r14525 MC10EP89/D hep89 transistor tt 2170 HP89 MC10EP89D MC10EP89DR2 MC10EP89DT MC10EP89DTR2

    transistor D361

    Abstract: m02 marking transistor 361A MSOP-8 Marking 361A ke marking transistor transistor CD 1061 1032 msop am-1360 Marking 361A 8-MSOP TDA 5555
    Text: Data Sheet D361A Electr oluminescent lectroluminescent Lamp D er IC Drriv iver General Description The Durel D361 Lamp Driver is part of a family of switch-mode IC inverters intended to reduce cost, improve performance and simplify the design of EL backlighting systems. The D361 IC and three components


    Original     		PDF D361A D361A transistor D361 m02 marking transistor 361A MSOP-8 Marking 361A ke marking transistor transistor CD 1061 1032 msop am-1360 Marking 361A 8-MSOP TDA 5555

    LM565 equivalent

    Abstract: missile irig tones ic lm565 LM107 substitution IRIG equivalent schematic of LM107 LM565 IRIG am output circuit IRIG modulator LM1596
    Text: INTRODUCTION The phase locked loop has been found to be a useful element in many types of communication systems It is used in two fundamentally different ways 1 as a demodulator where it is used to follow phase or frequency modulation and (2) to track a carrier or synchronizing signal which may


    Original     		PDF

    MOV 270/20

    Abstract: 2322 640 90007 NTC thermistor philips phct 203 VARISTOR 275 K20 cma 00124 BC 2222 037 71109 ic 40154 2322 661 91002 UAA 1006 34821
    Text: Information Product guide 200 BCcomp Information World wide web New products and highlights Series index Ceramic capacitors Film capacitors Electrolytic capacitors Variable capacitors Linear resistors Non-linear resistors Switches and potentiometers 02/2003


    Original     		PDF

    5001C

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Amplifier Transistors BDB02C PNP Silicon MAXIMUM RATINGS Rating Sym bol Value VCEO -8 0 Vdc C o lle c t o r - B a s e V olta g e VCES -8 0 Vdc E m it t e r - B a s e V o lta g e Vebo - 5 .0 Vdc A de C o lle c to r - E m itte r V oltag e


    OCR Scan     		PDF BDB02C 5001C

    bux c

    Abstract: bux26 npn 10a 800v BUX82 BUX83 Q62901-B11-A Q62901-B20 Q68000-A4676 Q68000-A4677
    Text: ESC D • ô23SbG5 OOOHÔbS □ H S I E â BUX 82 BUX 83 NPN Silicon Power Transistors ' SIEMENS AKTIENGESELLSCHAF ~ T ~ 3 3 - Î 3 BUX 8 2 and BUX 8 3 are triple diffused NPN silicon pow er transistors in a case similar to TO 3 3 A 2 DIN 4 1 8 7 2 . The collector is electrically connected to the case. The transistors


    OCR Scan     		PDF 0235bG5 T-33-13 Q68000-A4676 Q68000-A4677 Q62901-B11-A Q62901-B20 rlmhs50Â 023SbQS BUX82 bux c bux26 npn 10a 800v BUX82 BUX83 Q62901-B11-A Q62901-B20 Q68000-A4676 Q68000-A4677

    Untitled

    Abstract: No abstract text available
    Text: ESC D • 023SbG5 OOOHÖbS □ « S I E G BUX 82 BUX 83 NPN Silicon Power Transistors ' SIEMENS AKTIENGESELLSCHAF ~ T - 3 3 - i3 B U X 8 2 and B U X 8 3 are triple diffused NPN silicon power transistors in a case similar to TO 3 3 A 2 DIN 41872 . The collector is electrically connected to the case. The transistors


    OCR Scan     		PDF 023SbG5 05-KO BUX83 23SbOS BUX82 023Sb

    transistor tt 2206

    Abstract: 2sc2202 2sc2202 transistor TT 2206 TT 2206 transistor hr 2206 cp 2206 CP 2207 7c 138D
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 38dBm, 175MHz, transistor tt 2206 2sc2202 2sc2202 transistor TT 2206 TT 2206 transistor hr 2206 cp 2206 CP 2207 7c 138D

    IRFH150

    Abstract: UNF 0243 IRFH150 E 9410a 1RFH150 T0210 10S4
    Text: H E D § M ÔSS4SE IN T E R N A T IO N A L GOÜ ^blG 2 | Data Sheet No. PD-9.410A j R E C T IF IE R INTERNATIONAL RECTIFIER IO R HEXFET* TRANSISTORS IRFH15Q N-CHANNEL POWER MQSFETs Features: 100 Volt, 0.06 Ohm HEXFET T he HEXFET technology Is the key to International


    OCR Scan     		PDF IRFH15Ã G-591 IRFH150 T-39-13 G-592 UNF 0243 IRFH150 E 9410a 1RFH150 T0210 10S4

    g598

    Abstract: IRFH250 irfh260 A220 DLP 100-C 22E8 irfh25u 9411a G595
    Text: HE 0 § Mfl554SE INTERNATIONAL 3 | Data Sheet No. PD-9.411A RECTIFIER I“ R INTERNATIONAL RECTIFIER T-39-13 HEXFET TRANSISTORS IRFHS50 N - C H A IN IIM E L M O S F E T s Features: 200 Volt, 0.090 Ohm HEXFET T he HEXFET® technology is the key to International


    OCR Scan     		PDF s54s2 T-39-13 IRFH25Ã G-597 IRFH250 G-598 g598 irfh260 A220 DLP 100-C 22E8 irfh25u 9411a G595

    UFN420

    Abstract: UFN423 UFN421 UFN422
    Text: POWER MOSFET TRANSISTORS UFN420 500 Volt, 3.0 Ohm N-Channel UFN422 UFN423 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roswm and a high transconductance. FEATURES • Fast Switching


    OCR Scan     		PDF UFN420 UFN422 UFN423 UFN420 UFN421 UFN422 UFN423 UFN421

    Untitled

    Abstract: No abstract text available
    Text: 2N6751, 2N6752, 2N6753, 2N6754 HARRIS SEMICOND SECTOR File N u m be r SbE 1244 4302271 0040b44 71fi H H A S 5-A S w itc h M a ji Power Transistors • 7 = 3 5 -/? TERMINAL DESIGNATIONS High-Voltage N-P-N Types for 240 V Off-Line Power Supplies and Other High-Voltage


    OCR Scan     		PDF 2N6751, 2N6752, 2N6753, 2N6754 0040b44 O-204AA 2N6752 2N6754

    Helipot

    Abstract: R10K-L.25 7216-R10K-L MRF171 motorola an215a r10kl.25 helipot 7216 R/High frequency MRF transistor motorola MRF 172 R20KL.25 HELIPOT
    Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MRF171 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc


    OCR Scan     		PDF MRF171 MRF171, MRF171 AN215A Helipot R10K-L.25 7216-R10K-L motorola an215a r10kl.25 helipot 7216 R/High frequency MRF transistor motorola MRF 172 R20KL.25 HELIPOT

    P2QFP100-GH-1420

    Abstract: IR 1838 3v with 3 pins
    Text: S i GEC P L E S S E Y s i; M i c o n i i c; r o DECEMBER 1996 r s DS4375-2.0 CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 family of gate arrays from GEC Plessey Semiconductors GPS) consists of 14 fixed-size arrays with


    OCR Scan     		PDF DS4375-2 CLA90000 144-ACB-4040 208-ACB-4545 209-ACB-4545 84-ACB-2828 P2QFP100-GH-1420 IR 1838 3v with 3 pins

    DIODE F10

    Abstract: f10f10 TRANSISTOR p50
    Text: SFH608 Infineon APPLICATIONS Telecommunications Industrial Controls Office Machines Microprocessor System Interfaces Dimensions in inches mm pin one ID f3l Í21 Anode Optocouplers FEATURES • Very High CTR at / F=1.0 mA, VCE=0.5 V - SFH608-2,63-125% - SFH608-3,100-200%


    OCR Scan     		PDF SFH608 SFH608-2 SFH608-3 SFH608-4 SFH608-5, Photot2-226 SFH608 1-888-lnfineon DIODE F10 f10f10 TRANSISTOR p50

    Untitled

    Abstract: No abstract text available
    Text: 2N6751, 2N6752, 2N6753, 2N6754 File Number 1244 5-A S w itc h M a jf Power Transistors TERMINAL DESIGNATIONS High-Voltage N -P -N Types for 240 V O ff-Line Power Supplies and O ther H igh-Voltage Sw itching Applications Features: • High-temperature parameters guaranteed


    OCR Scan     		PDF 2N6751, 2N6752, 2N6753, 2N6754 O-204AA ZN6751 2N6752 2N6754SwitchMax

    TRANSISTOR 185 846

    Abstract: K 2225 transistor diode rj 93 kd62
    Text: POÜJEREX INC m NBŒ X 3*\Z D • 7S b S 1 GDDMS'IM Powerex, Inc., M ills Street, Youngwood, Pennsylvania 15697 412 92 5-7 272 Powerex Europe, S.A., 428 Avenue G, Durand, BP107, 72003 Le Mans, France (43)41.14.14 7 mPRX T '22-25' KD624530 Dual Darlington


    OCR Scan     		PDF BP107, KD624530 Amperes/600 BP107 KD624S30 TRANSISTOR 185 846 K 2225 transistor diode rj 93 kd62

    MH 7472

    Abstract: ic 7472 ttl 7472 ttl TTL 7472
    Text: SN5472, SN7472 AND-GATED J-K M ASTER-SLAVE FLIP-FLOPS WITH PRESET AND CLEAR DECEMBER 1963 - REVISED MARCH 1988 S N 5 4 7 2 . . J P AC KA G E S N 7 4 7 2 . . . N P AC K A G E Package Options Include Plastic and Ceramic DIPs and Ceramic Flat Packages TO P VIE W


    OCR Scan     		PDF SN5472, SN7472 MH 7472 ic 7472 ttl 7472 ttl TTL 7472

    OPA2662

    Abstract: No abstract text available
    Text: For Im s ä iite Assistance, Contici Your Local Salesperson BURR-BROWN OPA2662 ADVANCE INFORMATION SUBJECT TO CHANGE Wide Bandwidth, Dual, Power OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FEATURES DESCRIPTION • 200MHz SMALULARGE SIGNAL BANDWIDTH The OPA2662 is a veisatile driver device for ultrawide bandwidth systems, including high-resolution


    OCR Scan     		PDF OPA2662 200MHz OPA2662 16-pin 000V/HS

    RQW200

    Abstract: rqw 200 IL204 S03CH 441L204
    Text: Section 22 Electrical Characteristics 22.1 Absolute Maximum Ratings Table 22-1 lists the absolute maximum ratings. Table 22-1 Absolute Maximum Ratings Symbol Value ^ ^ , flU n lt ^ v -0 .3 to +7.0 Input voltage except port 4 V in -0 .3 to VCq +0.3 ' ^ Input voltage (port 4)


    OCR Scan     		PDF 44clb204 005D425 RQW200 rqw 200 IL204 S03CH 441L204