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    JV1N6119

    Abstract: No abstract text available
    Text: POWER SEMICONDUCTOR DIVISION IN sO T Ü ft\- JAN AND JANTX 1N6113 THRU 1N6130 BI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS VOLTAGE - 20 to 100 POWER - 500 Watts Peak FEATURES Qualified to MIL-S-19500/516A High temperature metallurgical^ bonded-glass passivated cavity-free


    OCR Scan     		PDF 1N6113 1N6130 MIL-S-19500/516A C/10seconds/ MIL-STD202, Mountin35 JANTX1N6113 100ns JV1N6119

    JV1N6119A

    Abstract: JV1N6120 JV1N6122A JV1N6119
    Text: POWER SEMICONDUCTOR DIVISION IN s tâ W JAN AND JANTX 1N6113A THRU 1N6130A BI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS VOLTAGE - 20 to 100 POWER - 500 Watts Peak MECHANICAL DATA FEATURES Qualified to MIL-S-19500/516A High temperature metallurgical^ bonded-glass passivated cavity-free


    OCR Scan     		PDF 1N6113A 1N6130A MIL-S-19500/516A C/10seconds/ MIL-STD202, JANTX1N6113A JV1N6119A JV1N6120 JV1N6122A JV1N6119