JIANGSU Search Results

JIANGSU Datasheets (500)

Part	Manufacturer	Description	Datasheet Type	PDF
1SS400G	Jiangsu Changjiang Electronics Technology	High Speed SWITCHING Diodes	Original	PDF
1SS400G-SOD-723	Jiangsu Changjiang Electronics Technology	High Speed SWITCHING Diodes	Original	PDF
1SS404	Jiangsu Changjiang Electronics Technology	High Speed SWITCHING Diodes	Original	PDF
1SS422	Jiangsu Changjiang Electronics Technology	High Speed SWITCHING Diodes	Original	PDF
2N7002M	Jiangsu Changjiang Electronics Technology	MOSFET( N-Channel )	Original	PDF
2SA1179	Jiangsu Changjiang Electronics Technology	TRANSISTOR (PNP)	Original	PDF
2SA1585E	Jiangsu Changjiang Electronics Technology	TRANSISTOR	Original	PDF
2SA42	Jiangsu Changjiang Electronics Technology	TO-92 Plastic-Encapsulate Transistors	Original	PDF
2SA44	Jiangsu Changjiang Electronics Technology	TO-92 Plastic-Encapsulate Transistors	Original	PDF
2SA608S	Jiangsu Changjiang Electronics Technology	TRANSISTOR (PNP)	Original	PDF
2SA821	Jiangsu Changjiang Electronics Technology	TRANSISTOR (PNP)	Original	PDF
2SA92	Jiangsu Changjiang Electronics Technology	TO-92 Plastic-Encapsulate Transistors	Original	PDF
2SA94	Jiangsu Changjiang Electronics Technology	TO-92 Plastic-Encapsulate Transistors	Original	PDF
2SC1815LT1	Jiangsu Changjiang Electronics Technology	SOT-23 Plastic-Encapsulate Transistors	Original	PDF

2SC2715M	Jiangsu Changjiang Electronics Technology	TRANSISTOR	Original	PDF
2SC3052	Jiangsu Changjiang Electronics Technology	TRANSISTOR (NPN)	Original	PDF
2SC3052-SOT-23	Jiangsu Changjiang Electronics Technology	TRANSISTOR (NPN)	Original	PDF
2SC3052-SOT-23-3L	Jiangsu Changjiang Electronics Technology	TRANSISTOR (NPN)	Original	PDF
2SC4115E	Jiangsu Changjiang Electronics Technology	TRANSISTOR	Original	PDF
2SC4115E-WBFBP-03A	Jiangsu Changjiang Electronics Technology	TRANSISTOR	Original	PDF

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JIANGSU Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SC3243 Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC3243 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM: 0.9 W (Tamb=25℃) 3. BASE Collector current 1 A ICM: Collector-base voltage	Original	O-92MOD 2SC3243 O-92MOD 100mA 500mA, 2SC3243	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SD1899 TRANSISTOR NPN TO – 252 FEATURES z Low VCE(sat) z High Transition Frequency 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	O-252 2SD1899	PDF
2SC2236 Abstract: transistor 2sC2236 2SA966 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO-92L 2SC2236 TRANSISTOR NPN 1. EMITTER FEATURE 2. COLLECTOR Complementary to 2SA966 and 3 Watts output Applications. 3. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	O-92L O-92L 2SC2236 2SA966 500mA 2SC2236 transistor 2sC2236	PDF
bc639 Abstract: BC635 BC637 transistor bc635 bc635 datasheet transistor BC639 BC639-16 BC639-10 transistor 639 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 BC635/637/639 Plastic-Encapsulate Transistors TRANSISTOR NPN TO-92 FEATURES High current transistors 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	BC635/637/639 BC635 BC637 BC639 bc639 BC635 BC637 transistor bc635 bc635 datasheet transistor BC639 BC639-16 BC639-10 transistor 639	PDF
3CA1837 Abstract: 3DA4793 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F 3DA4793 Plastic-Encapsulate Transistors TO-220F TRANSISTOR NPN FEATURES z Complementary to 3CA1837 z Collector Power Dissipation PCM : 2W (Tamb=25℃) 20 W (Tcase=25℃) 1. BASE 2. COLLECTOR 3. EMITTE	Original	O-220F 3DA4793 3CA1837 100mA 500mA, 3CA1837 3DA4793	PDF
MBR10100CT Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Diodes MBR10100CT TO-220 SCHOTTKY BARRIER RECTIFIER 1. ANODE FEATURES • Schottky Barrier Chip · Guard Ring Die Construction for Transient Protection · Low Power Loss, High Efficiency	Original	O-220 MBR10100CT O-220 MBR10100CT	PDF
2SD2470 Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S 2SD2470 TRANSISTOR Plastic-Encapsulate Transistors TO-92S NPN 1. EMITTER FEATURES z Low saturation voltage 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 3. BASE Value	Original	O-92S 2SD2470 100MHz 2SD2470	PDF
s9013 transistor Abstract: J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	OT-23 OT-23 S9013 S9012 500mA 500mA, 30MHz s9013 transistor J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3	PDF
2SA940 Abstract: 2SC2703 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SA940 TRANSISTOR PNP TO-220 1. BASE FEATURES z Wide safe Operating Area. z Complementary to 2SC2703 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	O-220 2SA940 O-220 2SC2703 -100A, -120V, -50mA 2SA940 2SC2703	PDF
transistor 649A Abstract: 649A transistor 2sb649 2SB649 2SB649A TO 126 FEATURES JIANGSU CHANGJIANG TO-126 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126 FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	O-126 2SB649/2SB649A 2SD669/A 2SB649 2SB649A -160V -10mA -150mA transistor 649A 649A transistor 2sb649 2SB649 2SB649A TO 126 FEATURES JIANGSU CHANGJIANG TO-126	PDF
2SB1197K Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SB1197K TRANSISTOR PNP Unit : mm 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Power amplifier z MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter	Original	OT-23-3L OT-23-3L 2SB1197K -100mA -50mA -50mA, 100MHz 2SB1197K	PDF
TRANSISTOR bd436 Abstract: BD436 BD434 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD434,436 TRANSISTOR PNP TO-126 FEATURES Amplifier and switching applications 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter	Original	O-126 BD434 O-126 BD434 BD436 -10mA TRANSISTOR bd436 BD436	PDF
br b772 Abstract: TRANSISTOR b772 B772 TRANSISTOR br b772 b772 transistor B772 datasheet B772 equivalent B772 PNP transistors b772 b772 to 126 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR PNP TO-126 FEATURES •Low speed switching 1. EMITTER 2.COLLECTOR 3.BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value	Original	O-126 O-126 -10mA -100A 10MHz br b772 TRANSISTOR b772 B772 TRANSISTOR br b772 b772 transistor B772 datasheet B772 equivalent B772 PNP transistors b772 b772 to 126	PDF
bt136 triac Abstract: TRIAC bt136 Thyristor BT136 BT136 BT136 motor equivalent for TRIAC BT136 bt136triac Thyristor to220 triac to-220 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Thyristor BT136 TRIAC TO-220 MAIN FEATURES Symbol value IT RMS 6 VDRM/VRRM 600 and 800 ITSM 25 1. ANODE unit A V A 2. ANODE 3. GATE 123 GENERAL DESCRIPTION . Glass passivated triacs in a plastic envelope ,	Original	O-220 BT136 O-220 PAK/TO-220 100mA BT136 bt136 triac TRIAC bt136 Thyristor BT136 BT136 motor equivalent for TRIAC BT136 bt136triac Thyristor to220 triac to-220	PDF

DIODE A7 Abstract: A7 diode marking A7 diode free diode marking a7 a7 surface mount diode A7 marking diode Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03D Plastic-Encapsulate DIODE DK4448CLLD03 - WBFBP-03D SWITCHING DIODE TOP 1.0x1.0×0.5 unit: mm DESCRIPTION Epitaxial planar Silicon diode + - 1. ANODE 2. ANODE 3. CATHODE FEATURES Fast Switching Speed	Original	WBFBP-03D DK4448CLLD03 WBFBP-03D volt00 100mA 150mA DIODE A7 A7 diode marking A7 diode free diode marking a7 a7 surface mount diode A7 marking diode	PDF
transistor equivalent book Abstract: transistor ic equivalent book TSA114ENND03 marking 14 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O TSA114ENND03 TRANSISTOR WBFBP-03B 1.2x1.2×0.5 unit: mm DESCRIPTION PNP Digital Transistor TOP I FEATURES 1) Built-in bias resistors enable the configuration of an	Original	WBFBP-03B TSA114ENND03 WBFBP-03B -100A -10mA/-0 100MHz transistor equivalent book transistor ic equivalent book TSA114ENND03 marking 14	PDF
SOT523 Abstract: SOT-523 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diode BZX84C2V4T-BZX84C39T ZENER DIODE FEATURES： ∙ 150mW power dissipation rating. Maximum Ratings @TA=25℃ unless otherwise specified SOT-523 Electrical Characteristics @ TA= 25°C unless otherwise specified	Original	OT-523 BZX84C2V4T-BZX84C39T 150mW BZX84C2V4T-BZX84C39T SOT523 SOT-523	PDF
1220A TRANSISTOR Abstract: KSA1220 equivalent transistor KSC2690A KSA1220A ksc2690 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors KSA1220/1220A TRANSISTOR PNP TO-126 FEATURES • Audio frequency power amplifier · High frequency power amplifier · Complement to KSC2690/KSC2690A 1. EMITTER 2. COLLECTOR	Original	O-126 KSA1220/1220A O-126 KSC2690/KSC2690A KSA1220 KSA1220A -120V, -300mA 1220A TRANSISTOR KSA1220 equivalent transistor KSC2690A KSA1220A ksc2690	PDF
2SA934 Abstract: 2SA934 transistor 2sc2060 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO-92L 2SC2060 TRANSISTOR NPN 1. EMITTER FEATURE 2. COLLECTOR z Power dissipation PCM: 0.75 W (Tamb=25℃) z Low saturation voltage (VCE(sat)=0.15V at 500mA) z Complementary pair with 2SA934	Original	O-92L O-92L 2SC2060 500mA) 2SA934 100mA -50mA 2SA934 2SA934 transistor	PDF
SOT R23 Abstract: marking R24 2SC3356 SOT R25 r25 q Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR	Original	OT-23-3L OT-23-3L 2SC3356 width350s, SOT R23 marking R24 2SC3356 SOT R25 r25 q	PDF
2SC2412 Abstract: marking FQ 2SA1037 transistor marking fq Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1037 SOT-23 TRANSISTOR PNP FEATURES ∙ Excellent hFE linearity. ∙ Complments the 2SC2412 1. BASE 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	OT-23 2SA1037 OT-23 2SC2412 -50mA 30MHz 2SC2412 marking FQ 2SA1037 transistor marking fq	PDF
transistor S9014 Abstract: s9014 s9014 equivalent transistor -s9014 s9014 transistor transistor TO-92 S9015 S9014 TO92 S9015 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9014 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z High total power dissipation.(PC=0.45W) z High hFE and good linearity z Complementary to S9015 2. BASE 3. COLLECTOR	Original	S9014 S9015 100mA, 30MHz transistor S9014 s9014 s9014 equivalent transistor -s9014 s9014 transistor transistor TO-92 S9015 S9014 TO92 S9015	PDF
transistor 2n3904 Abstract: transistor 2N3906 2N3906 TRANSISTOR 2N3906 2N3906 PNP transistor 2n3906 TRANSISTOR pnp 2n3906 PNP transistor DC current gain PNP switching transistor 2N3906 mhz 2n3906 equivalent transistor 2N3904 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR PNP TO-92 FEATURE z PNP silicon epitaxial planar transistor for switching and Amplifier applications z As complementary type, the NPN transistor 2N3904 is	Original	2N3906 2N3904 OT-23 MMBT3906 -10mA -50mA -100mA -50mA, transistor 2n3904 transistor 2N3906 2N3906 TRANSISTOR 2N3906 PNP transistor 2n3906 TRANSISTOR pnp 2n3906 PNP transistor DC current gain PNP switching transistor 2N3906 mhz 2n3906 equivalent transistor	PDF
SD106WS Abstract: marking TC SOD-323 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SD106WS FAST SCHOTTKY DIODES SOD-323 + FEATURES • Low turn-on voltage • Fast switching • Microminiature plastic package • This device is protected by a PN junction guard ring	Original	OD-323 SD106WS OD-323 100uA 100mA 200mA SD106WS marking TC SOD-323	PDF

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JIANGSU Search Results

JIANGSU Datasheets (500)

JIANGSU Datasheets Context Search

2SC3243

Untitled

2SC2236

bc639

3CA1837

MBR10100CT

2SD2470

s9013 transistor

2SA940

transistor 649A

2SB1197K

TRANSISTOR bd436

br b772

bt136 triac

DIODE A7

transistor equivalent book

SOT523

1220A TRANSISTOR

2SA934

SOT R23

2SC2412

transistor S9014

transistor 2n3904

SD106WS