LUPA-1300-2
Abstract: LUPA1300-2 AN57864 AN54468 ke63 CHN 816 Color Filter Array CFA transistor CHN 64 149 transistor CHN 64 229 -20/LUPA1300-2
Text: NOIL2SM1300A LUPA1300-2: High Speed CMOS Image Sensor Features • • • • • • • • • • • • • • • • 1280 x 1024 Active Pixels 14 mm X 14 mm Square Pixels 1.4” Optical Format Monochrome or Color Digital Output 500 fps Frame Rate
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NOIL2SM1300A
LUPA1300-2:
10-Bit
168-Pin
NOIL2SM1300A/D
LUPA-1300-2
LUPA1300-2
AN57864
AN54468
ke63
CHN 816
Color Filter Array CFA
transistor CHN 64 149
transistor CHN 64 229
-20/LUPA1300-2
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LUPA-3000
Abstract: switch Signal LUX L4 LUPA3000 AN57864 CMOS global shutter b1000001 Color Filter Array CFA schematic diagram ip camera
Text: NOIL1SN3000A LUPA3000: 3 MegaPixel High Speed CMOS Sensor Features • • • • • • • • • • • • • • • • 1696 x 1710 Active Pixels 8 mm x 8 mm Square Pixels 1.2 inch Optical Format Monochrome or Color Digital Output 485 Frames per Second fps Frame Rate
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NOIL1SN3000A
LUPA3000:
369-Pin
NOIL1SN3000A/D
LUPA-3000
switch Signal LUX L4
LUPA3000
AN57864
CMOS global shutter
b1000001
Color Filter Array CFA
schematic diagram ip camera
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Untitled
Abstract: No abstract text available
Text: Formosa MS SMD MOSFET 2N7002DW List List. 1 Package outline. 2 Features. 2
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2N7002DW
MIL-STD-883
JESD22-B102-D
JESD22-A102-C
168hours
MIL-STD-750D
METHOD-1051
JESD22-A104-B
10min
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JESD22-A110-B HIGHLY ACCELERATED TEMPERATURE AND
Abstract: No abstract text available
Text: V•I Chip – BCM Bus Converter Module TM B048K480T30 + + –K – • >97% efficiency • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1165 W/in3 • <1 µs transient response • Small footprint – 280 W/in • >3.5 million hours MTBF
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B048K480T30
P/N27688
07/04/10M
JESD22-A110-B HIGHLY ACCELERATED TEMPERATURE AND
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transistor af 126
Abstract: JESD22-B-107-A J-STD-029 mount chip transistor 332
Text: V•I Chip – BCM Bus Converter Module TM B048K120T20 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 17.0 A K = 1/4 Rout = 25 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 200 Watt 300 Watt for 1 mS • 125°C operation • High density – up to 800 W/in3
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B048K120T20
7/03/10M
transistor af 126
JESD22-B-107-A
J-STD-029
mount chip transistor 332
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4218T
Abstract: AN205 POLA PMM4218TWP
Text: E EricssonInternal Limited Internal TABLE OF CONTENTS PRODUCT SPECIFICATION Prepared also subject responsible if other MPM/BY/P Stella TAO Henrik Sundh Approved PMM 4000[Krister series MPM/BY/M Lundberg] 1 (1) (3) No. Checked 1/1301 00152-EN/LZT146316 BMR 651Technical
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00152-EN/LZT146316
651Technical
JESD22-A103-B
JESD22-B105-C
JESD22-A101-B
JESD22-B104-B
JESD22-B103-B
JESD22-B103-B
4218T
AN205 POLA
PMM4218TWP
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LMZ10505EXT
Abstract: JESD22-B103 6TPE150MIC2 JESD22-B110 LMZ10504EXT
Text: LMZ10505EXT 5A SIMPLE SWITCHER Power Module with 5.5V Maximum Input Voltage for Military and Rugged Applications Easy to Use 7 Pin Package Performance Benefits • Operates at high ambient temperatures ■ Low radiated emissions EMI complies with EN55022
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LMZ10505EXT
EN55022
EN61000
LMZ10505EXT
JESD22-B103
6TPE150MIC2
JESD22-B110
LMZ10504EXT
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Untitled
Abstract: No abstract text available
Text: Limited Internal Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION E Prepared also subject responsible if other MPM/BY/P Henrik Sundh Approved PMF 8000[Krister seriesLundberg] MPM/BY/M 1 (1) (3) No. Checked 1/1301 00152-EN/LZT146318 BMR 643Technical
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00152-EN/LZT146318
643Technical
JESD22-A103-B
JESD22-B105-C
JESD22-A101-B
JESD22-B104-B
JESD22-B103-B
JESD22-B103-B
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national an-2 switching regulator
Abstract: LMZ10505EXT LMZ10504EXT JESD22-B110
Text: LMZ10504EXT 4A SIMPLE SWITCHER Power Module with 5.5V Maximum Input Voltage for Military and Rugged Applications Easy to Use 7 Pin Package Performance Benefits • Operates at high ambient temperatures ■ Low radiated emissions EMI complies with EN55022
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LMZ10504EXT
EN55022
EN61000
national an-2 switching regulator
LMZ10505EXT
LMZ10504EXT
JESD22-B110
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5318T
Abstract: No abstract text available
Text: EricssonInternal Limited Internal TABLE OF CONTENTS PRODUCT SPECIFICATION E Prepared also subject responsible if other MPM/BY/P Henrik Sundh Henrik (MPM/BY/P) Sundh Approved PMF 5000[Krister seriesLundberg] MPM/BY/M 1 (1) (3) No. Checked 1/1301 00152-EN/LZT146317
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00152-EN/LZT146317
643Technical
JESD22-A103-B
JESD22-B105-C
JESD22-A101-B
JESD22-B104-B
JESD22-B103-B
JESD22-B103-B
5318T
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ericsson pwm
Abstract: pme8 PME 260
Text: Limited Internal Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION E Prepared also subject responsible if other MPM/BY/P Henrik Sundh Approved PME 8000F series MPM/BY/M [Krister Lundberg] 1 (1) (3) No. Checked 1/1301 00152-EN/LZT146330 BMR 642Technical
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00152-EN/LZT146330
642Technical
JESD22-A103-B
JESD22-B105-C
JESD22-A101-B
JESD22-B104-B
JESD22-B103-B
JESD22-B103-B
ericsson pwm
pme8
PME 260
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Untitled
Abstract: No abstract text available
Text: EricssonInternal Limited Internal TABLE OF CONTENTS PRODUCT SPECIFICATION E Prepared also subject responsible if other MPM/BY/P Henrik Sundh Henrik (MPM/BY/P) Sundh Approved PMF 4000[Krister seriesLundberg] MPM/BY/M 1 (1) (3) No. Checked 1/1301 00152-EN/LZT146316
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00152-EN/LZT146316
643Technical
JESD22-A103-B
JESD22-B105-C
JESD22-A101-B
JESD22-B104-B
JESD22-B103-B
JESD22-B103-B
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Untitled
Abstract: No abstract text available
Text: Limited Internal Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION E Prepared also subject responsible if other MPM/BY/P Henrik Sundh Approved PMJ 5000[Krister seriesLundberg] MPM/BY/M 1 (1) (3) No. Checked 1/1301 00152-EN/LZT146326 BMR 646Technical
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00152-EN/LZT146326
646Technical
JESD22-A103-B
JESD22-B105-C
JESD22-A101-B
JESD22-B104-B
JESD22-B103-B
JESD22-B103-B
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Untitled
Abstract: No abstract text available
Text: Limited Internal Ericsson Internal PRODUCT TABLE OF CONTENTS SPECIFICATION E Prepared also subject responsible if other MPM/BY/P Henrik Sundh Approved PMF 4000[Krister seriesLundberg] MPM/BY/M 1 (1) (3) No. Checked 1/1301 00152-EN/LZT146316 BMR 643Technical
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00152-EN/LZT146316
643Technical
JESD22-A103-B
JESD22-B105-C
JESD22-A101-B
JESD22-B104-B
JESD22-B103-B
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Emcore solar cell
Abstract: solar cell triple-junction "solar cell" bare die schottky diode JESD22-B104C CTJ solar cell A12O3 JESD22-b103 JESD22-B104 JESD22-A114
Text: CTJ Receiver Assembly – 10 mm x 10 mm Part No. 615238 DATASHEET SOLAR POWER The Concentrator Triple-Junction CTJ receiver assembly takes the world-class efficiency of EMCORE’s multi-junction space solar cells and combines it with state-of-the-art packaging technology to create the most efficient CPV assembly today.
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JESD22-B104C
A12O3
JESD22-B103B
MIL-STD-883
JESD22-A114
Emcore solar cell
solar cell
triple-junction "solar cell"
bare die schottky diode
JESD22-B104C
CTJ solar cell
JESD22-b103
JESD22-B104
JESD22-A114
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JESD22-B104
Abstract: No abstract text available
Text: ADVANCED INFORMATION UW Series Quartz Crystal 2.0 x 1.6 x 0.30mm UW Miniature Quartz Crystal Ceramic SMD Frequency Range: • 26.000000 MHz to 66.000000 MHz Fundamental Characteristics at 25°C ±2°C: • Frequency Calibration Tolerance: ±10ppm, to ±50ppm
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10ppm,
50ppm
REV2010
JESD22-B104
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JESD22-A-103A
Abstract: jesd22-a-104B JESD22 A-102 JESD22-A-101 JESD22-B-107-A converter 48 to 24 switching
Text: PRELIMINARY V•I Chip Bus Converter Module BCM V•I Chip – BCM Bus Converter Module TM B048K480T30 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 48 V V•I Chip Converter • Typical efficiency 96% • 300 Watt 450 Watt for 1 ms
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B048K480T30
JESD22-A-103A
jesd22-a-104B
JESD22 A-102
JESD22-A-101
JESD22-B-107-A
converter 48 to 24 switching
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Untitled
Abstract: No abstract text available
Text: Military COTS 28 V DC-DC V•I Chip Modules VTM PRM Pre-Regulator Module Voltage Transformation Module • Input: 16 – 50 Vdc • Isolated 1 – 50 Vdc output • Output: 26 – 50 Vdc • Power: Up to 100 A or 120 W • Power: 120 W • 1 µs transient response
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Abstract: No abstract text available
Text: ST32F512-M M2M MCU with 32-bit ARM Cortex M3 CPU and 512 Kbyte high-density Flash memory Data brief Features Hardware features • ARM Cortex™-M3 32-bit RISC core ■ 12 Kbytes of user RAM ■ 512 Kbytes of user Flash memory with OTP area: – 10-year data retention at 105°C, or 15
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ST32F512-M
32-bit
10-year
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Untitled
Abstract: No abstract text available
Text: ST32F416-M M2M MCU with 32-bit ARM Cortex M3 CPU and 416 Kbyte high-density Flash memory Data brief Features Hardware features • ARM Cortex™-M3 32-bit RISC core ■ 12 Kbytes of user RAM ■ 416 Kbytes of user Flash memory with OTP area: – 10-year data retention at 105°C, or 15
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ST32F416-M
32-bit
10-year
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48V-to-12V
Abstract: smd TRANSISTOR marking T1
Text: V•I Chip – BCM Bus Converter Module TM B048K120T15 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 12.5 A K = 1/4 Rout = 32 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 150 Watt 225 Watt for 1 ms • 125°C operation • High density – up to 600 W/in3
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B048K120T15
11/03/10M
48V-to-12V
smd TRANSISTOR marking T1
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LUPA-3000
Abstract: NOIL1SN3000A Color Filter Array CFA an52561
Text: NOIL1SN3000A LUPA3000: 3 MegaPixel High Speed CMOS Sensor Features • • • • • • • • • • • • • • • • 1696 x 1710 Active Pixels 8 mm x 8 mm Square Pixels 1.2 inch Optical Format Monochrome or Color Digital Output 485 Frames per Second fps Frame Rate
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NOIL1SN3000A
LUPA3000:
369-Pin
NOIL1SN3000A/D
LUPA-3000
Color Filter Array CFA
an52561
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MPU-6050
Abstract: mpu6050 mpu 6050 MPU-6000 PS-MPU-6000A-00 bias stability gyro mems mpu 6050 3d gesture recognition transmitter module circuit mpu6000 JESD22-A108D MPU 6000
Text: InvenSense Inc. 1197 Borregas Ave, Sunnyvale, CA 94089 U.S.A. Tel: +1 408 988-7339 Fax: +1 (408) 988-8104 Website: www.invensense.com Document Number: PS-MPU-6000A-00 Revision: 3.3 Release Date: 5/16/2012 MPU-6000 and MPU-6050 Product Specification Revision 3.3
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PS-MPU-6000A-00
MPU-6000
MPU-6050
MPU-6000/MPU-6050
MPU-6000TM,
MPU-6050TM,
MPU-60X0TM,
mpu6050
mpu 6050
bias stability gyro mems mpu 6050
3d gesture recognition transmitter module circuit
mpu6000
JESD22-A108D
MPU 6000
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Saronix CRYSTAL FY
Abstract: smd transistor FY SMD 14.7456 quartz crystal JESD22-b103 SMD F9 B104 JESD22-A113 JESD22-B104 JESD22-B107 J-STD-002
Text: F9/FY Series | Legacy NES5/NKS5 Series 5 x 3.2mm Miniature Quartz Crystal Ceramic SMD Frequency Range: Actual Size • 12.0000 MHz to 50.0000 MHz Fundamental Product Description Temperature Range: The 2-pad F9 and the 4-pad FY Series devices incorporate a sub-miniature AT-cut crystal resonator
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50ppm
1234MHz,
30ppm
NKS5NAD1-18
Saronix CRYSTAL FY
smd transistor FY
SMD 14.7456 quartz crystal
JESD22-b103
SMD F9
B104
JESD22-A113
JESD22-B104
JESD22-B107
J-STD-002
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